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| * AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 * GENERAL PURPOSE SILICON DIODES * METALLURGICALLY BONDED 1N483B 1N485B 1N486B MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C Operating Current: 200 mA Derating: 1.2 mA/C From 25C to 150C 1.0 mA/C From 150C to 175C Forward Current: 650 mA 0.085/0.125 2.16/3.18 ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150C mA 50 50 50 I FSM TP = 1/120 s TA = 25C A 2 2 2 V (pk) 1N483B 1N485B 1N486B 80 180 250 V (pk) 70 180 225 mA 200 200 200 FIGURE 1 TYPE VF @100mA I R1 at V RWM TA = 25C nA dc 25 25 25 I R2 at V RM TA = 25C A 100 100 100 I R3 at V RWM TA = 150C A dc 5 5 5 DESIGN DATA CASE: Hermetically sealed glass case. DO-7 outline LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 200 C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 C/W maximum POLARITY: Cathode end is banded. V dc 1N483B 1N485B 1N486B 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 MOUNTING POSITION: Any. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: http://www.microsemi.com 9 IN483B, IN485B 1000 and IN486B 100 IF - Forward Current - (mA) 10 0C 15 100 C 25 C 1 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1.1 1.2 1.3 1000 100 IR - Reverese Current - (A) 10 1 150C 0.1 100 C 25C .01 -65C -65C NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures 10 This datasheet has been download from: www..com Datasheets for electronics components. |
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