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| MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. MGFS36E2527 2.5-2.7GHz HBT HYBRID IC Outline Drawing 4.5 1.0 DESCRIPTION MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE. FEATURES * * * * * * * * * InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 1 2 3 10 9 8 7 6 (X-ray Top View) APPLICATION IEEE802.16-2004, IEEE802.16e-2005 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc Vc Vc Vc Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM Pin Vcont (0/3V) Vc Pout Bias Circuit Vref Po_det ELECTRICAL CHARACTERISTICS(Ta=25C) Symbol Parameter Test Conditions* Min 2.5 Vc=6V, Vref=2.85V Pout=27dBm 64QAM OFDM Modulation Duty Cycle < 10% Vcont=3V Vc=6V, Vref=0V Limits Typ 33 10 2.5 -10 1.5 19 10 Unit Max 2.7 GHz dB % % dB V dB A f Frequency Gp Gain Efficiency t EVM EVM Input Return Loss in Vdet Power Detector Voltage ATT Control Gain Step Ileak Leakage Current *NOTE : Ta=25C, Zin=Zout=50 Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. MITSUBISHI ELECTRIC CORP. (1/3) October-2006 MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. MGFS36E2527 2.5-2.7GHz HBT HYBRID IC PERFORMANCE DATA Output Power vs. Input Power 30 Vc=6V Vref=2.85V Vcont=0V Output Power (dBm) 25 14 Efficiency (%) 12 10 8 6 2.5GHz 2.6GHz 2.7GHz 10 -20 -15 -10 Input Power (dBm) -5 0 4 2 0 10 15 20 Output Power (dBm) 25 30 2.5GHz 2.6GHz 2.7GHz Efficiency vs. Output Power 20 18 16 Vc=6V Vref=2.85V Vcont=0V 20 15 EVM vs. Output Power 6.0 5.5 5.0 4.5 4.0 EVM (%) Vc=6V Vref=2.85V Vcont=0V 2.5GHz 2.6GHz 2.7GHz Detector Voltage vs. Output Power 3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 0.0 2.5GHz 2.6GHz 2.7GHz 10 15 20 Output Power (dBm) 25 30 Vc=6V Vref=2.85V Vcont=0V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 30 Attenuation Performance 40 Vc=6V Vref=2.85V 30 S21 (dB) Vcont=0V Vcont=3V 20 10 0 2.0 2.2 2.4 2.6 2.8 3.0 Frequency (GHz) MITSUBISHI ELECTRIC CORP. (2/3) October-2006 MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. MGFS36E2527 2.5-2.7GHz HBT HYBRID IC APPLICATION CIRCUIT 50ohm s RF Input Pin Vcb Vc1 Vc2 Vcont Vref 1000pF Attenuator Control Reference Voltage Detector Voltage Out RF Output 1000pF GND Po_det 10nF Supply Voltage Vc3 1uF 1000pF Pout 50ohm s Pulse Operation is controlled by Vref MITSUBISHI ELECTRIC CORP. (3/3) October-2006 |
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