View IRL5NJ7413_725352.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 94271B
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number IRL5NJ7413
BVDSS
IRL5NJ7413 30V, N-CHANNEL
RDS(on) 0.014
ID 22A*
30V
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 22* 22* 88 75 0.60 16 190 22 7.5 1.0 -55 to 150 300 (for 5 s) 1.0
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
08/23/04
IRL5NJ7413
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- -- 1.0 30 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.027 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.014 0.020 3.0 -- 25 250 100 -100 70 20 23 20 80 80 80 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, I D = 1.0mA VGS = 10V, ID = 22A A V GS = 4.5V, ID = 22A VDS = VGS, ID = 250A VDS = 10V, IDS = 22A A VDS = 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ =125C VGS = 16V V GS = -16V VGS =10V, ID = 22A VDS = 24V VDD = 15V, ID = 22A, VGS =10V, RG = 6.2
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1640 660 80
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 22* 88 1.0 120 300
Test Conditions
A
V nS nC Tj = 25C, IS = 22A, VGS = 0V A Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
-- -- 1.67
Units
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
2
www.irf.com
IRL5NJ7413
100
VGS TOP 15V 10V 7.0V 4.5V 3.5V 3.3V 3.0V BOTTOM 2.7V
100
VGS 15V 10V 7.0V 4.5V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
1
2.7V 20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100
2.7V
20s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
T J = 150C
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0
ID = 22A
ID, Drain-to-Source Current ()
1.5
10
1.0
T J = 25C
0.5
1 2.5 3.0 3.5
VDS = 15V 15 20s PULSE WIDTH
4.0 4.5 5.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRL5NJ7413
3000
2500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 22A VDS = 24V VDS = 15V VDS = 6V
16
C, Capacitance (pF)
2000
Ciss
1500
12
Coss
1000
8
500
4
Crss
0 1 10 100
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
TJ = 150 C
ISD , Reverse Drain Current (A)
10
TJ = 25 C
1
ID , Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
10 Tc = 25C Tj = 150C Single Pulse 1 10
1ms
0.1 0.4
V GS = 0 V
0.8 1.2 1.6
10ms
100
1
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRL5NJ7413
60
LIMITED BY PACKAGE
50
VDS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
40
-V DD
VGS
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRL5NJ7413
EAS , Single Pulse Avalanche Energy (mJ)
400
TOP
300
15V
BOTTOM
ID 10A 14A 22A
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
200
A
VGS 20V
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
0
25
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10V
QGS VG
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRL5NJ7413
Footnotes:
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=0.8mH Peak IAS =22A, VGS = 10 V, RG= 25
Repetitive Rating; Pulse width limited by
ISD 22A, di/dt 140 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 30V, TJ 150C
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/04
www.irf.com
7

▲Up To Search▲

Price & Availability of IRL5NJ7413

	To Download IRL5NJ7413 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .