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PD - 94991
IRFZ48NPBF
HEXFET(R) Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
D
VDSS = 55V RDS(on) = 14m
G S
ID = 64A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
64 45 210 130 0.83 20 32 13 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.15 --- 62
Units
C/W
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1
2/10/04
IRFZ48NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 55 --- --- 2.0 24 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 12 78 34 50 4.5 7.5
--- 1970 --- 470 --- 120 --- 700
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 14 m VGS = 10V, ID = 32A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 32A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 81 ID = 32A 19 nC VDS = 44V 30 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 32A ns --- RG = 0.85 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 190 mJ IAS = 32A, L = 0.37mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 64 --- --- showing the A G integral reverse --- --- 210 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 32A, VGS = 0V --- 68 100 ns TJ = 25C, IF = 32A --- 220 330 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 0.37mH
max. junction temperature. ( See fig. 11 ) RG = 25, IAS = 32A. (See Figure 12)
ISD 32A, di/dt 220A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 400s; duty cycle 2%. This is the destructive value not limited to the thermal limit. This is the thermal limited value.
2
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IRFZ48NPBF
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
10
10
4.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 25 C TJ = 175 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 64A
I D , Drain-to-Source Current (A)
2.0
100
1.5
1.0
10
0.5
1
V DS = 25V 20s PULSE WIDTH 4 6 8 10 12
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFZ48NPBF
3500 3000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 32A VDS = 44V VDS = 27V VDS = 11V
16
C, Capacitance (pF)
2500 2000 1500 1000 500
Ciss
12
8
Coss Crss
4
0
1
10
100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 20 40 60 80
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 175 C
ID, Drain-to-Source Current (A)
100
100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 10msec
10
TJ = 25 C
1
0.1 0.2
V GS = 0 V
0.7 1.2 1.7 2.2
0.1
VSD ,Source-to-Drain Voltage (V)
100
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFZ48NPBF
70
VDS
60
RD
VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
ID , Drain Current (A)
50 40 30 20 10 0
-VDD
Fig 10a. Switching Time Test Circuit
VDS 90%
25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ48NPBF
15V
EAS , Single Pulse Avalanche Energy (mJ)
360
TOP
300
VDS
L
DRIVER
BOTTOM
ID 13A 23A 32A
240
RG
20V
D.U.T
IAS tp
+ V - DD
A
180
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
120
60
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFZ48NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
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IRFZ48NPBF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions are shown in millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/04
8
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