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PD - 91664B
IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY
(R)
Product Summary
Part Number IRFG5210 IRFG5210 RDS(on) 1.6 1.6 ID 0.68A -0.68A CHANNEL N P
HEXFET(R) MOSFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
MO-036AB
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 10V, TC = 25C Continuous Drain Current ID @ VGS = 10V, TC = 100C Continuous Drain Current IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page
Pre-Irradiation
N-Channel
0.68 0.4 2.72 14 0.011 20 64 -- -- 20 -55 to 150
o
P-Channel
-0.68 -0.4 -2.72 14 0.011 20 110 -- -- 27~
Units A
W
W/C
V mJ A mJ V/ns
C
300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical)
g
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1
04/17/02
IRFG5210
Electrical Characteristics For Each N-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- 0.27 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 1.6 1.83 4.0 -- 25 250 100 -100 9.5 1.4 4.3 8.7 2.4 19 24 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 0.4A VGS = 10V, ID = 0.68A VDS = VGS, ID = 0.25mA VDS > 15V, IDS = 0.4A VDS= 160V, VGS= 0V VDS = 160V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 0.68A, VDS = 100V VDD = 100V, ID = 0.68A, VGS =10V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage 200 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance -- VGS(th) Gate Threshold Voltage 2.0 g fs Forward Transconductance 0.54 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA nC
ns
. nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
C iss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
140 56 14
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 0.63 2.5 1.5 110 310
Test Conditions
A
V nS nC Tj = 25C, IS = 0.68A, VGS = 0V Tj = 25C, IF = 0.68A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 17 90
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFG5210
Electrical Characteristics For Each P-Channel Device @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units
-- -0.22 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 1.6 1.83 -4.0 -- -25 -250 -100 100 18 2.8 8.4 15 11 36 43 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID = -0.4A VGS = -10V, ID =- 0.68A VDS = VGS, ID = -0.25mA VDS > -15V, IDS = -0.4A VDS= -160V, VGS= 0V VDS = -160V, VGS = 0V, TJ =125C VGS = - 20V VGS = 20V VGS = -10V, ID = -0.68A, VDS = -100V VDD = -100V, ID = -0.68A, VGS = -10V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage -200 BV DSS/T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance -- VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 0.64 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nA
nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
320 110 20
-- -- --
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -0.61 -2.4 -4.8 120 420
Test Conditions
A
V nS nC Tj = 25C, IS = -0.68A, VGS = 0V Tj = 25C, IF = -0.68A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 17 90
C/W
Test Conditions
Typical socket mount
For footnotes refer to the last page
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3
IRFG5210 N-Channel Q1,Q3
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
1
4.5V
4.5V
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
10
2.5
ID = 0.68A
I D , Drain-to-Source Current (A)
2.0
TJ = 150 C
1
1.5
TJ = 25 C
1.0
0.5
0.1 4 5
V DS = 50V 20s PULSE WIDTH 6 7
0.0 -60 -40 -20
VGS = 12V 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature C) (
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFG5210 N-Channel Q1,Q3
300
VGS , Gate-to-Source Voltage (V)
240
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 0.68A
16
V DS= 160V V DS= 100V V DS= 40V
C, Capacitance (pF)
180
Ciss C oss
12
120
8
60
C rss
4
0 1 10 100
0 0 2 4
FOR TEST CIRCUIT SEE FIGURE 16
13a & b
6
8
10
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100us
TJ = 150 C
1
ID , Drain Current (A)
1
1ms
TJ = 25 C
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.1 0.1
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRFG5210 N-Channel Q1,Q3
0.7
V DS
0.6
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
0.5
-V DD
0.4
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.3
0.2
Fig 10a. Switching Time Test Circuit
VDS
0.1
90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 0.01 1
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 10 100 0.01 0.1 1
PDM t1 t2 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRFG5210 N-Channel Q1,Q3
150
EAS , Single Pulse Avalanche Energy (mJ)
15V
120
ID 0.30A 0.43A BOTTOM 0.68A TOP
VDS
L
D R IV E R
90
RG
20V VGS
D .U .T.
IA S tp
+ V - DD
A
60
0 .01
30
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
10V 12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
IRFG5210 P-Channel Q2,Q4
10
-I D , Drain-to-Source Current (A)
VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP
1
-4.5V
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance (Normalized)
10
3.0
ID = -0.68A
-I D , Drain-to-Source Current (A)
2.5
TJ = 25 C TJ = 150 C
1
2.0
1.5
1.0
0.5
0.1 4 5
V DS = -50V 20s PULSE WIDTH 6 7
0.0 -60 -40 -20
VGS = -12V 10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature C) (
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
8
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IRFG5210 P-Channel Q2,Q4
600
500
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -0.68A
16
C, Capacitance (pF)
VDS =-160V VDS =-100V VDS =-40V
400
Ciss
12
300
200
C oss
8
100
4
C rss
1 10 100
0
0 0 4 8
FOR TEST CIRCUIT SEE FIGURE 13
12 16 20
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
-ID , Drain Current (A) I
TJ = 150 C
1
100us
1 1ms
TJ = 25 C
0.1 1.0
V GS =0V
2.0 3.0 4.0
0.1
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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9
IRFG5210 P-Channel Q2,Q4
0.7
V DS
0.6
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
0.4 0.3
VGS Pulse Width 1 s Duty Factor 0.1 %
0.2 0.1
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100 D = 0.50
Thermal Response (Z thJA )
0.20 10 0.10 0.05 0.02 0.01 1
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJA + TA 10 100 0.01 0.1 1 1000
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10
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-
0.5
V DD
IRFG5210 P-Channel Q2,Q4
VDS
L
300
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T.
IA S
VD D A D R IV E R
240
-20V VGS
ID -0.30A -0.43A BOTTOM -0.68A TOP
tp
0.0 1
180
15V
120
Fig 12a. Unclamped Inductive Test Circuit
60
IAS
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-10V 12V
.2F .3F
-10V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
D.U.T.
-
VDS
11
IRFG5210
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 276mH, Peak IL = 0.68A, VGS = 10V ISD 0.68A, di/dt 290A/s, VDD 200V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = - 50V, starting TJ = 25C, L= 475mH,
Peak IL = - 0.68A, VGS = -10V
~ ISD - 0.68A, di/dt - 290A/s,
VDD -200V, TJ 150C
Case Outline and Dimensions -- MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02
12
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