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| (R) MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s s STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP112 AND TIP117 3 1 s APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD112 and MJD117 form complementary PNP - NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM R1(typ) = 7K R2(typ) = 200 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 100 100 5 2 4 0.05 20 -65 to 150 150 Unit V V V A A A W o o C C For PNP type voltage and current values are negative. January 2003 1/6 MJD112/MJD117 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEO I CEX I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CB = 80 V V CE = 50 V V CE = 80 V V CE = 80 V V EB = 5 V I C = 30 mA 100 Min. Typ. Max. 0.02 0.01 0.02 0.01 0.5 2 Unit mA mA mA mA mA mA V T c = 125 o C V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) V BE(on) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain IC = 2 A IC = 4 A IC = 4 A IC = 2 A I C = 0.5 A IC = 2 A IC = 4 A I B = 8 mA I B = 40 mA I B = 40 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V 500 1000 200 2 3 4 2.8 V V V V 12000 Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP types voltage and current values are negative. Safe Operating Areas Derating Curve 2/6 MJD112/MJD117 DC Current Gain (NPN type) DC Current Gain (NPN type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/6 MJD112/MJD117 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types) 4/6 MJD112/MJD117 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 5/6 MJD112/MJD117 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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