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| SEMICONDUCTOR TECHNICAL DATA General Description KHB7D5N60P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D5N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=600V, ID=7.5A Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V K M L J D N N P H Qg(typ.)= 32.5nC DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KHB7D5N60P1 KHB7D5N60F1 VDSS VGSS 7.5 ID 4.6 IDP EAS EAR dv/dt 147 PD 1.18 Tj Tstg 150 0.38 W/ D 1 2 3 1. GATE 2. DRAIN 3. SOURCE UNIT 600 30 7.5* 4.6* 30* 230 14.7 4.5 48 mJ mJ V/ns W E G P V V TO-220AB KHB7D5N60F1 A A F O B C 30 K L J Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient M M H -55 150 N 1 2 3 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 RthJC RthCS RthJA 0.85 0.5 62.5 2.6 62.5 /W /W /W TO-220IS * : Drain current limited by maximum junction temperature. D G S 2005. 12. 27 Revision No : 0 1/7 KHB7D5N60P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3.75A 600 2.0 0.7 1.0 10 4.0 100 1.2 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2005. 12. 27 Revision No : 0 2/7 KHB7D5N60P1/F1 ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 1 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5V ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 -55 C 10 0 10 0 150 C 25 C 10 -1 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 VGS = 0V IDS = 250 RDS(ON) - ID 2.5 On - Resistance RDS(ON) () 2.0 1.5 1.0 0.5 0 1.1 VG = 10V VG = 20V 1.0 0.9 0.8 -100 -50 0 50 100 150 0 5 10 15 20 25 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 3.0 RDS(ON) - Tj VGS =10V IDS = 3.75A Reverse Drain Current IS (A) Normalized On Resistance 10 1 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2005. 12. 27 Revision No : 0 3/7 KHB7D5N60P1/F1 C - VDS Gate - Source Voltage VGS (V) 2400 Frequency = 1MHz Qg- VGS 12 10 8 6 4 2 0 0 5 10 15 20 25 30 ID=7.5A VDS = 120V VDS = 300V VDS = 480V Capacitance (pF) 2000 1600 1200 800 400 0 10-1 Ciss Coss Crss 100 101 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area 102 Operation in this area is limited by RDS(ON) Safe Operation Area Operation in this area is limited by RDS(ON) 10 s 10s 102 Drain Current ID (A) 101 100s 1ms Drain Current ID (A) 101 100s 1ms 100 10ms 100ms DC 100 10 ms 100 ms 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10 -1 DC 102 100 101 102 103 10-2 0 10 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 101 102 103 Drain - Source Voltage VDS (V) (KHB7D5N60P1) Drain - Source Voltage VDS (V) (KHB7D5N60F1) ID - Tj 8 Drain Current ID (A) 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2005. 12. 27 Revision No : 0 4/7 KHB7D5N60P1/F1 Rth {KHB7D5N60P} 100 Normalized Transient Thermal Resistance Duty=0.5 0.2 10-1 0.1 PDM 0.05 t1 t2 1 0.02 0.0 10-2 g Sin le Pu lse - Duty Factor, D= t1/t2 - RthJC = 10-4 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 10-5 Square Wave Pulse Duration (sec) Rth {KHB7D5N60F} Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 10-1 0.05 PDM t1 0.02 0.01 le ing Pu lse t2 - Duty Factor, D= t1/t2 - RthJC = 10-4 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 10-2 10-5 S Square Wave Pulse Duration (sec) 2005. 12. 27 Revision No : 0 5/7 KHB7D5N60P1/F1 - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp - Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS VGS 10% td(on) ton tr td(off) tf toff 2005. 12. 27 Revision No : 0 6/7 KHB7D5N60P1/F1 - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS driver VDS (DUT) Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2005. 12. 27 Revision No : 0 7/7 |
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