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| SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB011N40P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V K M L J D N N P Qg(typ.) =32.5nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 135 1.07 150 -55 150 10.5 6.6 42 360 13.5 4.5 44 0.35 RATING KHB011N40P1 KHB011N40F1 400 30 10.5* 6.6* 42* mJ K TO-220AB UNIT V A C F O E G P KHB011N40P1 V A B mJ V/ns W W/ L J D M M H Q DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient N 1 2 3 1. GATE 2. DRAIN 3. SOURCE RthJC RthCS RthJA 0.93 0.5 62.5 2.86 62.5 /W /W /W TO-220IS D * : Drain current limited by maximum junction temperature. G S 2006. 1. 17 Revision No : 0 1/7 KHB011N40P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=400V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=5.25A 400 2.0 0.54 0.5 10 4.0 100 0.53 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2006. 1. 17 Revision No : 0 2/7 KHB011N40P1/F1 ID - VDS VGS TOP : 15.0 V 10.0 V 1 8.0 V 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom: 4.5V ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 10 0 10 0 150 C 25 C -1 -55 C 10 -1 10 -1 10 0 10 1 10 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 RDS(ON) - ID 2.0 On - Resistance RDS(ON) () VGS = 0V IDS = 250A 1.1 1.5 VGS = 10V 1.0 1.0 VGS = 20V 0.9 0.5 0.8 -100 0 -50 0 50 100 150 0 5 10 15 20 25 30 35 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD 3.0 RDS(ON) - Tj VGS = 10V IDS =5.25A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 1.0 1.2 1.4 1.6 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2006. 1. 17 Revision No : 0 3/7 KHB011N40P1/F1 C - VDS 2800 2400 12 Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz ID = 10.5A VDS = 80V VDS = 200V VDS = 320V 10 8 6 4 2 0 0 5 10 Capacitance (pF) 2000 1600 Ciss Coss 1200 800 400 0 10-1 100 101 Crss 15 20 25 30 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area (KHB011N40P1) 102 Operation in this area is limited by RDS(ON) 10s 100s Safe Operation Area (KHB011N40F1) 102 Operation in this area is limited by RDS(ON) 10s Drain Current ID (A) Drain Current ID (A) 101 0 100s 10 1 1ms 1ms 10 10ms 100ms 100 Tc= 25 C Tj = 150 C -1 Single nonrepetitive pulse 10ms 100ms DC 10 -1 DC 10 100 101 102 103 10 Tc= 25 C Tj = 150 C -2 Single nonrepetitive pulse 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) ID - Tj 12 10 Drain Current ID (A) 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2006. 1. 17 Revision No : 0 4/7 KHB011N40P1/F1 Rth {KHB011N40P1} 100 Normalized Transient Thermal Resistance Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0 .01 Single Pulse - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Rth {KHB011N40F1} Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 0.05 0.02 10-1 PDM t1 t2 Single Pulse 0.01 - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 2006. 1. 17 Revision No : 0 5/7 KHB011N40P1/F1 - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V ID(t) VGS VDD VDS(t) Time tp - Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS 10% td(on) ton tr tf td(off) toff VGS 2006. 1. 17 Revision No : 0 6/7 KHB011N40P1/F1 - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 x VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2006. 1. 17 Revision No : 0 7/7 |
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