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T H AT Corporation
FEATURES
* * * * * * Four Matched PNP Transistors Low noise -- 0.75
nV Hz
Quad Low-Noise PNP Transistor Array THAT120 APPLICATIONS
* * * * * * Microphone Preamplifiers Tape Head Preamplifiers Current Sources Current Mirrors Log/Antilog Amplifiers Multipliers
High Speed -- 325 MHz ft Excellent Matching - 500 mV (typ) Dielectrically Isolated -25 V VCEO
DESCRIPTION
THAT120 is a quad, large-geometry monolithic PNP transistor array which combines low noise, high speed and excellent parametric matching. The large geometry typically results in 25 W base spreading resistance, producing 0.75 nV Hz voltage noise. This makes these parts an excellent choice for low-noise amplifier input stages. Fabricated on a Complementary Bipolar Dielectrically Isolated process, all four transistors are electrically isolated from each other by a layer of oxide. The resulting low collector-to-substrate capacitance produces a typical ft of 325 MHz, for AC performance similar to 2N3906-class devices. The dielectric isolation also minimizes crosstalk and provides complete DC isolation. Substrate biasing is not required for normal operation, though the substrate should be grounded to optimize speed. The one-chip construction assures excellent parameter matching and tracking over temperature.
7 8 9 10 4 11 12 13 SUB 14 NC 1 Q2 Q1 3 2 Q4 Q3 6 5
0.060 (1.52) Typ. 1
0.7500.004 (19.050.10)
0.25.004 (6.350.10)
0.050 (1.27) Typ
0.32 Max. (8.13) 0.1250.004 (3.180.10)
0.157 0.245 (3.99) (6.2) Max Max 1 0.018 (0.46) Max
0.10 Typ. (2.54) 0.075 (1.91)
0.018 (0.46)
0.010 (0.25)
0.344 (8.74) Max
0.069 (1.75) Max
0.010 (0.25) Max
Figure 1. Pin Configuration
Figure 2. Dual-In-Line Package Outline
Figure 3. Surface Mount Package Outline
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Rev. 11/27/00
SPECIFICATIONS 1
Maximum Ratings (T A = 25C)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Collector Voltage Emitter-Emitter Voltage Collector Current Emitter Current Operating Temperature Range Maximum Junction Temperature Storage Temperature Symbol BVCEO BVCBO BVEBO BVCC BVEE IC IE TA TJMAX TSTORE -45 Conditions IC = 1 mAdc, IB = 0 IC = 10 mAdc, IE = 0 IE = 10 mAdc, IC = 0 Min -25 -25 -5 100 100 -10 -10 0 Typ -40 40 3/4 200 200 -20 -20 70 150 125 Max 3/4 3/4 3/4 3/4 3/4 Units V V V V V mA mA C C C
Electrical Characteristics 2
Parameter Current Gain Symbol hfe Conditions VCB = 10 V IC = 1 mA IC = 10 mA Current Gain Matching Noise Voltage Density Gain-Bandwidth Product DVBE (VBE1-VBE2; VBE3-VBE4) Dhfe eN ft VOS VCB = 10 V, IC = 1 mA VCB = 10 V, IC = 1 mA, 1 kHz IC = 1 mA, VCB = 10 V IC = 1 mA IC = 10 mA DIB (IB1-IB2; IB3-IB4) IOS IC = 1 mA IC = 10 mA Collector-Base Leakage Current Bulk Resistance Base Spreading Resistance Collector Saturation Voltage Output Capacitance Collector-Collector Capacitance Q1/Q2; Q3/Q4 CCC VCC = 0 V, 100 kHz 0.6 pF ICBO rBE rbb VCE(SAT) COB VCB = 25 V VCB = 0 V, 10mA < IC < 10mA VCB = 10 V, IC = 1mA IC = 1 mA, IB = 100 mA VCB = 10 V, IE = 0 mA, 100 kHz -- -- -- -- -- -- -- -- 50 50 -- -- 75 75 5 0.75 325 0.5 0.5 700 7 -25 2 25 -0.05 3 3 3 1800 18 -- -- -- 3/4 3/4 -- -- % nV / Hz MHz mV mV nA nA pA W W V pF Min Typ Max Units
1. All specifications subject to change without notice. 2. Unless otherwise noted, TA=25C. THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com

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