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| HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 13 60 15 30 1.0 5 250 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A mJ J V/ns W C C C C V~ g G D RDS(on) = 800 V = 13 A = 0.60 W trr 250 ns ISOPLUS 247TM Isolated back surface* G = Gate S = Source * Patent pending Features D = Drain * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<50pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.0 4.5 100 TJ = 25C TJ = 125C 25 1 0.60 V V nA mA mA W Advantages * Easy assembly * Space savings * High power density * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 7.5A Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. 98590A (7/00) (c) 2000 IXYS All rights reserved 1-2 IXFR 15N80Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 8 16 4300 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 60 18 VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A RG = 1 W (External), 27 53 16 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 20 30 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 7.5A Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive, Note 1 IF = Is, 100A, VGS = 0 V, Note 2 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 60 1.5 250 A A V ns mC A IF = Is, -di/dt = 100 A/ms, VR = 100 V 0.8 7.5 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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