 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Datasheet BTS737S3 Smart High-Side Power Switch Four Channels: 4 x 35m Advanced Current Sense Product Summary Operating Voltage Vbb(on) Active channels one On-state Resistance RON 35m Nominal load current IL(NOM) 5.4A Current limitation IL(SCr) 40A 5.0 ...40V four parallel 9m 11.1A 40A Package P-DSO-28 General Description * * N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions Applications * * * * C compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads All types of resistive and capacitve loads Most suitable for loads with high inrush currents, so as lamps Replaces electromechanical relays, fuses and discrete circuits Basic Functions * * * * * Very low standby current Improved electromagnetic compatibility (EMC) CMOS compatible input Stable behaviour at undervoltage Wide operating voltage range Protection Functions * * * * * * * * Short circuit protection Overload protection Current limitation Thermal shutdown Reverse battery protection with external resistor Overvoltage protection with external resistor (incl. load dump) Loss of ground protection Electrostatic discharge protection (ESD) Block Diagram Vbb IN1 IS1 IS2 IN2 Load 2 IN3 IS3 IS4 IN4 Logic Channel 3 Channel 4 Logic Channel 1 Channel 2 Load 1 Diagnostic Function * Proportional load current sense (with defined fault signal during thermal shutdown and current limit) Load 3 GND Load 4 Infineon technologies 1 of 15 2004-Feb-19 Datasheet BTS737S3 Functional diagram overvoltage protection internal voltage IN1 logic gate control + charge pump current limit VBB clamp for inductive load OUT1 ESD IS1 temperature sensor Proportional sense current LOAD . channel 1 IN2 IS2 GND1/2 control and protection circuit of channel 2 OUT2 IN3 IS3 control and protection circuit of channel 3 OUT3 IN4 IS4 GND3/4 control and protection circuit of channel 4 OUT4 Infineon technologies 2 2004-Feb-19 Datasheet BTS737S3 Pin Definitions and Functions Pin Symbol Function 1, 7, 8, Vbb Positive power supply voltage. Design the 14, wiring for the simultaneous max. short circuit 15, 28 currents from channel 1 to 4 and also for low thermal resistance 4 IN1 Input 1,2, 3,4 activates channel 1,2,3,4 in case of logic high signal 3 IN2 11 IN3 10 IN4 25,26,27 OUT1 Output 1,2,3,4 protected high-side power output 22,23,24 OUT2 of channel 1,23,4. Design the wiring for the 19,20,21 OUT3 max. short circuit current 16,17,18 OUT4 5 IS1 Diagnostic feedback 1 .. 4 of channel 1 to 4 Providing a sense current, proportional to the 6 IS2 load current 12 IS3 13 IS4 2 GND1/2 Ground of chip 1 (channel 1,2) 9 GND3/4 Ground of chip 2 (channel 3,4) Pin configuration (top view) Vbb 1 GND1/2 IN2 IN1 IS1 IS2 Vbb GND3/4 IN4 IN3 IS3 IS4 Vbb 2 3 4 5 6 7 9 10 11 12 13 14 * 28 Vbb 27 26 25 24 23 22 20 19 18 17 16 15 OUT1 OUT1 OUT1 OUT2 OUT2 OUT2 OUT3 OUT3 OUT4 OUT4 OUT4 Vbb Vbb 8 21 OUT3 Infineon technologies 3 2004-Feb-19 Datasheet BTS737S3 Maximum Ratings at Tj = 25C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection1) Tj,start = -40 ...+150C Load current (Short-circuit current, see page 6) Load dump protection3) VLoadDump = VA + Vs, VA = 13.5 V RI4) = 2 , td = 400 ms; IN = low or high, each channel loaded with RL = 4.7 , Operating temperature range Storage temperature range Power dissipation (DC)6) Ta = 25C: Ta = 85C: (all channels active) Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150C6), IL = 4.0 A, EAS = 0.8J, 0 one channel: IL = 6.0 A, EAS = 1.0J, 0 two parallel channels: IL = 9.5 A, EAS = 1.5J, 0 four parallel channels: see diagrams on page 10 Symbol Vbb Vbb IL VLoad dump5) Tj Tstg Ptot Values 40 36 IL(lim)2 60 -40 ...+150 -55 ...+150 3.7 1.9 Unit V V V C W ZL 33 37 64 1.0 4.0 8.0 -10 ... +16 0.3 0.3 mH Electrostatic discharge capability (ESD) IN: (Human Body Model) IS: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF VESD kV Input voltage (DC) Current through input pin (DC) Current through sense pin (DC) see internal circuit diagram page 9 VIN IIN IIS V mA 1) 2) 3) 4) 5) 6) Single pulse Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75 resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 Infineon technologies 4 2004-Feb-19 Datasheet BTS737S3 Thermal Characteristics Parameter and Conditions Thermal resistance junction - soldering point7)8), junction - ambient8) @ 6 cm2 cooling area Symbol Values min typ Max ----40 33 11 --Unit each channel: one channel active: all channels active: Rthjs Rthja K/W Electrical Characteristics Parameter and Conditions, each of the four channels at Tj = -40...+150C, Vbb = 12 V unless otherwise specified Symbol Values min typ Max Unit Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 5 A each channel, Tj = 25C: RON see diagram, page 11 Tj = 150C: Nominal load current one channel active: IL(NOM) two parallel channels active: four parallel channels active: Device on PCB8), Ta = 85C, Tj 150C --5.0 6.7 10.5 -- 30 55 5.4 7.4 11.1 -- 35 64 ---1 m A Output current while GND disconnected, VIN = 0, see diagram page 10; (not subject to production test - specified by design) IL(GNDhigh) mA s Turn-on time9) IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Slew rate on 9) VOUT rising from 10 to 30% of Vbb, RL = 12 : Slew rate off 9) VOUT falling from 70 to 40% of Vbb, RL = 12 : ton toff dV/dton -dV/dtoff --0.2 0.1 50 120 --- 150 250 0.9 0.9 V/s V/s 7) 8) 9) Soldering point: upper side of solder edge of device pin 7,8. See page 16. Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 See timing diagram on page 12. Infineon technologies 5 2004-Feb-19 Datasheet BTS737S3 Operating Parameters Operating voltage Overvoltage protection10) I bb = 40 mA Standby current11) VIN = 0; see diagram page 12 Vbb(on) Vbb(AZ) Tj =-40...25C: Ibb(off) Tj =150C: Tj =125C: 5.0 41 ---47 10 40 -1 -1.6 6.0 40 52 25 80 25 6 15 --V V A (not subject to production test - specified by design) Off-State output current Tj =-40...25C: IL(off) (included in Ibb(off))VIN = 0; each channel; Tj=150C: Operating current, VIN = 5V, IGND = IGND1/2 + IGND3/4, one channel on: four channels on: IGND ----- A mA Protection Functions12) Current limit, (see timing diagrams, page 13) IL(lim) Repetitive short circuit current limit, Tj = Tjt each channel IL(SCr) two,three or four parallel channels (see timing diagrams, page 13) 36 ---- 45 40 40 4 58 ---- A A Initial short circuit shutdown time Tj,start =25C: toff(SC) ms (see timing diagrams on page 13) Output clamp (inductive load switch off)13) at VON(CL) = Vbb - VOUT, IL= 40 mA Thermal overload trip temperature Thermal hysteresis VON(CL) Tjt Tjt 41 150 -- 47 -10 52 --- V C K Reverse Battery (not subject to production test - specified by design) Reverse battery voltage 14) -Vbb Drain-source diode voltage (Vout > Vbb)15 -VON IL = -2A; Tj = +150C: 10) --- -500 14 -- V mV Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 75 resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and circuit diagram on page 9. 11) Measured with load; for the whole device; all channels off. 12) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 13) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL). 14) The temperature protection and sense functionality is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 9). 15) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. Infineon technologies 6 2004-Feb-19 Datasheet BTS737S3 Input16) Input resistance (see circuit page 9) RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) 2.5 1.7 1.5 -1 20 3.5 --0.3 -50 6.0 3.2 --35 90 k V V V A A Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current On state input current VIN = 0.4 V: VIN = 5 V: Diagnostic Characteristics Current sense ratio, static on-condition, kILIS =IL:IIS kILIS IL = 10 A: IL = 2 A: IL = 1 A: IL = 0.5 A: -4575 4100 4200 3580 5 300 5300 5300 5300 5800 6.3 --6.3 -2.5 -- -6000 6300 6600 8080 7.5 1 -7.5 1 -300 V ms mA V A s Sense signal in case of fault-conditions17) Sense signal delay after thermal shutdown18) (not subject to production test - specified by design) Sense current saturation Current sense output voltage limitation IIS = 0, IL = 5 A: Current sense leakage/offset current VIN=0, VIS = 0, IL = 0: VIN=5 V, VIS = 0, IL = 0: Current sense settling time to IIS static10% after positive input slope, IL = 0 5 A, (not subject to production test - specified by design) Vfault tdelay(fault) IIS,lim VIS(lim) IIS(LL) IIS(LH) tson(IS) 5.4 -4 5.4 ---- 16) If ground resistors RGND are used, add the voltage drop across these resistors. 17) In the case of current limitation or thermal shutdown the sense signal is no longer a current proportional to the load current, but a fixed voltage of typ. 6 V. 18) In the case of thermal shutdown the V signal remains for tdelay(fault) longer than the restart of the switch (see fault diagram on page 14). Infineon technologies 7 2004-Feb-19 Datasheet BTS737S3 Truth Table Input level Normal Operation CurrentLimitation19) Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output Voltage clamp Output level L H H L L L L H H Z H L L H H L H L H L H L H L Current Sense IIS 0 nominal Vfault 0 Vfault 0 Vfault 0 Terms Ibb V bb IIN1 IIN2 V IN1 V IN2 V IS1 IIS1 IIS2 V IS2 3 5 2 6 IN 1 IN 2 IS1 IS2 PROFET Chip 1 GND1/2 4 IIG ND1/2 V O UT1 V O UT2 V bb OUT1 Leadfram e 25 26 27 22 23 24 V O N1 IL1 V O N2 V bb V IN3 IIN3 IIN4 IIS3 V IN4 V IS3 IIS4 V IS4 Leadfram e 10 12 9 13 IN 3 IN 4 IS 3 IS 4 PROFE T Chip 2 GND3/4 11 IIG ND3/4 V O UT3 V O UT4 V bb OUT3 19 20 21 16 17 18 V O N3 IL3 V O N4 IL2 IL4 OUT2 OUT4 Leadframe (Vbb) is connected to pin 1, 7, 8, 14, 15, 28. 19) 20) Current limitation is only possible while the device is switched on. Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS. Infineon technologies 8 2004-Feb-19 Datasheet BTS737S3 Input circuit (ESD protection), IN1 to IN4 R IN I Overvoltage output clamp, OUT1 or OUT2 +Vbb VZ ESD-ZD I GND I I V ON OUT The use of ESD zener diodes as voltage clamp at DC conditions is not recommended. Power GND Sense output Normal operation: IS = IL / kILIS VIS = IS * RIS; RIS = 1 k nominal RIS > 500 Sense output logic IS V IS VON clamped to VON(CL) = 47 V typ. Overvoltage protection of logic part GND1/2 or GND3/4 + V bb I IS IN RI Logic V Z2 Vf ESD-ZD R GND IS IS V Z1 ESD-Zener diode: VESD = 6.1 V typ., max 14 mA; Operation under fault condition so as thermal shut down or current limitation Sense output logic R IS Integrated GND resistor RGND GND Signal GND Vfault Vf ESD-ZD Vfault VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 k typ., RGND = 75 R GND Reverse battery protection IS Logic RI Logic MOSFET - Vbb Vfault = 6V typ Vfault < VESD under all conditions IN IS OUT Power MOSFET Integrated GND resistor RGND R IS Signal GND RL Power GND RGND = 75 , RI = 3.5 k typ, Temperature protection and sense functionality is not active during inverse current operation. Infineon technologies 9 2004-Feb-19 Datasheet BTS737S3 GND disconnect Inductive load switch-off energy dissipation E bb Vbb PROFET IS GND V bb V IN V ST V GND OUT IN Vbb PROFET OUT E AS ELoad IN = IS GND ZL { R L L EL ER Any kind of load. In case of IN = high is VOUT VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Energy stored in load inductance: Vbb disconnect with energized inductive load EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : 2 high IN Vbb PROFET OUT IS GND EAS= IL* L (V + |VOUT(CL)|) 2*RL bb ln (1+ |V IL*RL OUT(CL)| ) V bb Maximum allowable load inductance for a single switch off (one channel)6) L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 ZL [mH] 1000 For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 10) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection. 100 10 1 0.1 0 1 2 3 4 5 6 7 IL [A] Infineon technologies 10 2004-Feb-19 Datasheet BTS737S3 Typ. on-state resistance RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mOhm] 60 Tj = 150C 50 180 30 25C -40C 20 0 3 5 7 9 30 40 Vbb [V] Typ. standby current Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low Ibb(off) [A] 45 40 35 30 25 20 15 10 5 0 -50 0 50 100 150 200 Tj [C] Infineon technologies 11 2004-Feb-19 Datasheet BTS737S3 Functionality diagrams All diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 1a: Switching a resistive load, change of load current in on-condition: IN Figure 1c: Behaviour of sense output: Sense current (IS) and sense voltage (VS) as function of load current dependent on the sense resistor Shown is VS and IS for three different sense resistors. Curve 1 refers to a low resistor, curve 2 to a medium-sized resistor and curve 3 to a big resistor. Note, that the sense resistor may not fall short of a minimum value of 500. VOUT t on tslc(IS) t off t slc(IS) IL VS Load 1 IS,VS t son(IS) Load 2 VESD Vfault 3 2 t soff(IS) t 1 The sense signal is not valid during settling time after turn on or change of load current. IS IL 1 2 3 Figure 1b: Vbb turn on: IN Vbb IL(lim) IL IL IS = IL / kILIS VIS = IS * RIS; RIS = 1 k nominal RIS > 500 IS,VS proper turn on under all conditions Infineon technologies 12 2004-Feb-19 Datasheet BTS737S3 Figure 2a: Switching a lamp: IN Figure 3a: Short circuit: shut down by overtempertature, reset by cooling IN IL ST IL(lim) IL(SCr) V OUT VS I L Vfault t The initial peak current should be limited by the lamp and not by the current limit of the device. Heating up may require several milliseconds, depending on external conditions IL(lim') = 45 A typ. increases with decreasing temperature. Figure 2b: Switching a lamp with current limit: The behaviour of IS and VS is shown for a resistor, which refers to curve 1 in figure 1c IN Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) IN1/2 V OUT IL1 + IL2 IL(SCp) I L(SCr) IL IS t off(SC) Vfault VS1, VS2 VS Vfault t Infineon technologies 13 2004-Feb-19 Datasheet BTS737S3 Figure 4a: Overtemperature: Reset if Tj kILIS IN 5000 IL IS 0 [A] IL 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VS Vfault tdelay(fault) TJ t Figure 6a: Current sense versus load current: 1.3 [mA] 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 IL 5 [A] 6 21) I IS This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by a factor of two by calibrating the value of kILIS for every single device. Infineon technologies 14 2004-Feb-19 Datasheet BTS737S3 Package and Ordering Code Standard: P-DSO-28-16 Sales Code Ordering Code 2.65 max BTS 737 S3 Q67060-S6133 0.35 x 45 +0.09 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. 8 ma x 2.45 -0.2 0.2 -0.1 7.6 -0.2 1) Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. 1.27 0.35 +0.15 2) 0.2 28x 28 15 0.1 0.4 +0.8 10.3 0.3 0.23 We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information GPS05123 1 Index Marking 18.1 -0.4 1) 14 1) Does not include plastic or metal protrusions of 0.15 max rer side 2) Does not include dambar protrusion of 0.05 max per side All dimensions in millimetres For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15. Pin 7,8 Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja Infineon technologies 15 2004-Feb-19 |
Price & Availability of BTS737S3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |