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Product Description
Sirenza Microdevices' SPF-2086TK is a high performance 0.25m pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300m device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.
SPF-2086TK
Low Noise pHEMT GaAs FET
0.1 - 6 GHz Operation
35 30
Gain, Gmax (dB)
Typical Gain Performance
3v, 20mA 5v, 40mA
25 20 15 10 5 0 0 2 4 6 8 10 12
Gmax Gain
Product Features * 22 dB Gmax at 1.9 GHz * 0.4 dB FMIN at 1.9 GHz * +32 dBm Output IP3 * +20 dBm Output Power at 1dB Compression Applications * LNA for Analog and Digital Wireless Systems * 3G, Cellular, PCS * Fixed Wireless, Pager Systems * Driver Stage for low power applications
Test C ondition [1] = 100% Tested U nits Min. Typ. Max.
Frequency (GHz)
Symbol
D evice C haracteristics, T = 25C VDS=3V, IDQ=20mA (unless otherw ise noted)
Gmax
Maxi mum Avai lable Gai n ZS=ZS*, ZL=ZL* Inserti on Gai n ZS=ZL= 50 Ohms Mi ni mum Noi se Fi gure ZS=OPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT Output 1dB C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS = VDSP, VGS= 0V Tranconductance: VDS = VDSP, VGS= -0.25V Pi nch-Off Voltage: VDS = 2.0V, IDS = 150A Gate-to-Source Breakdown Voltage IGS = 0.3mA, drai n open Gate-to-D rai n Breakdown Voltage IGD = 0.3mA, VGS = -3.0V Thermal Resi stance, juncti on-to-lead
f f f f
= = = =
0.9 1.9 4.0 6.0
GHz GHz GHz GHz [1]
dB dB dB dB dB dB dB dB dB dB m dB m dB m dB m mA mS [1] [1] [1]
o
16.0 30 -1.5 -
25.2 21.8 18.7 13.5 17.7 0.3 0.4 0.5 0.7 32 28 20 15 85 112 -1.0 -17 -17 110
19.4 140 -0.5 -8 -8 -
S 21
f = 1.9 GHz f f f f = = = = 1 2 4 6 GHz GHz GHz GHz
FMIN
OIP3 P 1dB IDSS gm VP BVGS BVGD Rth
VDS=5.0V, IDQ=40mA VDS=3.0V, IDQ=20mA VDS=5.0V, IDQ=40mA VDS=3.0V, IDQ=20mA
V V V C /W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101225 Rev. D
SPF-2086TK Low Noise FET Absolute Maximum Ratings
Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (C) TL = Lead Temperature (pin 4) (C) RTH = Thermal Resistance (C/W)
Parameter D rai n C urrent Forward Gate C urrent Reverse Gate C urrent D rai n-to-Source Voltage Gate-to-D rai n Voltage Gate-to-Source Voltage RF Input Power Operati ng Temperature Storage Temperature Range Power D i ssi pati on C hannel Temperature Symbol IDS IGSF IGSR VDS VGD VGS PIN TOP Tstor PDISS TJ Value IDSS 0.3 0.3 +7 -8 <-5 or >0 100 -40 to +85 -40 to +150 600 +150 U nit mA mA mA V V V mW C C mW C
Noise parameters, at typical operating frequencies
Bias VDS=3.0V, IDS=20mA
FREQ GHZ
1.0 2.0 4.0 6.0
FMIN dB
0.28 0.44 0.54 0.70
|GOPT|
0.74 0.69 0.54 0.28
GOPT ANG
17 31 84 179
rN W
0.22 0.18 0.09 0.05
GA dB
23.1 17.8 13.9 12.2
Bias VDS=5.0V, IDS=40mA
FREQ GHZ
1.0 2.0 4.0 6.0
FMIN dB
0.34 0.55 0.75 1.04
|GOPT|
0.76 0.67 0.47 0.31
GOPT ANG
19 36 93 -170
rN W
0.27 0.23 0.11 0.06
GA dB
23.9 19.1 15.0 12.9
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101225 Rev. D
2
SPF-2086TK Low Noise FET
Scattering Parameters:
Typical S-parameters VDS=3.0V, IDS=20 mA
Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5
|S11| 0.97 0.92 0.85 0.76 0.67 0.58 0.51 0.46 0.42 0.40 0.41 0.44 0.48 0.51 0.54 0.57 0.60 0.63 0.66 0.69 0.70 0.71 0.72 0.75 0.76 0.77 0.77
S11 Ang -17.5 -34.2 -50.9 -69.2 -89.6 -109.6 -128.5 -146.4 -165.0 175.1 155.0 137.1 123.1 111.6 101.5 91.8 83.7 77.5 71.4 66.3 61.1 55.7 50.1 45.0 40.3 36.4 32.9
|S21| 8.07 7.76 7.40 7.06 6.67 6.16 5.64 5.16 4.74 4.37 4.04 3.71 3.43 3.18 2.96 2.75 2.55 2.40 2.26 2.13 2.02 1.92 1.81 1.70 1.60 1.51 1.47
S21 Ang 162.9 146.1 130.4 114.9 99.4 85.3 72.4 60.5 49.3 38.2 27.3 16.7 6.6 -2.9 -11.9 -21.0 -29.5 -37.4 -45.8 -54.0 -62.0 -69.9 -77.4 -84.6 -91.7 -98.6 -106.0
|S12| 0.01 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.08 0.09 0.09 0.10 0.10 0.10 0.11 0.11 0.12 0.12 0.13 0.14 0.14 0.15 0.15 0.16 0.16 0.16 0.17
S12 Ang 55.5 72.8 62.9 52.7 45.3 39.6 33.2 27.3 23.0 18.9 14.6 9.5 5.3 1.2 -2.1 -5.6 -9.3 -13.0 -17.5 -22.1 -26.8 -30.9 -35.0 -39.7 -44.1 -47.5 -51.7
|S22| 0.66 0.64 0.61 0.57 0.51 0.47 0.44 0.42 0.39 0.36 0.32 0.29 0.26 0.23 0.21 0.20 0.19 0.20 0.22 0.24 0.27 0.29 0.31 0.33 0.35 0.39 0.43
S22 Ang -10.0 -18.9 -27.5 -36.6 -46.7 -55.4 -62.2 -68.0 -73.9 -81.1 -90.9 -102.9 -115.7 -128.5 -141.7 -156.2 -170.9 172.1 154.7 140.5 128.5 119.0 109.5 99.8 90.3 81.2 75.0
Note : De-embedded to device pins
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101225 Rev. D
3
SPF-2086TK Low Noise FET
Scattering Parameters:
Typical S-parameters VDS=5.0V, IDS=40 mA
Freq GHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5
|S11| 0.97 0.91 0.83 0.74 0.64 0.55 0.48 0.43 0.39 0.37 0.39 0.43 0.47 0.50 0.53 0.56 0.59 0.63 0.66 0.69 0.70 0.71 0.73 0.75 0.77 0.77 0.78
S11 Ang -18.2 -35.9 -53.3 -72.2 -92.9 -113.4 -132.3 -150.3 -169.1 170.9 151.2 134.3 121.0 110.1 100.4 91.3 83.3 77.2 71.5 66.6 61.3 55.7 50.2 45.0 40.3 36.3 32.7
|S21| 8.87 8.47 8.00 7.54 7.06 6.46 5.87 5.35 4.89 4.50 4.16 3.83 3.54 3.29 3.07 2.86 2.66 2.52 2.38 2.24 2.12 2.01 1.90 1.78 1.67 1.58 1.53
S21 Ang 162.0 144.6 128.4 112.6 97.1 83.2 70.5 58.8 47.9 37.0 26.3 15.9 6.0 -3.6 -12.7 -21.8 -30.2 -38.3 -46.8 -55.1 -63.3 -71.4 -79.0 -86.4 -93.7 -100.9 -108.4
|S12| 0.01 0.02 0.03 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.09 0.10 0.10 0.11 0.12 0.13 0.13 0.14 0.15 0.15 0.16 0.16 0.17 0.17 0.18
S12 Ang 92.8 66.4 60.3 54.0 46.6 40.7 35.9 31.9 27.9 25.5 22.1 17.2 13.3 9.6 5.7 2.4 -0.8 -4.6 -9.5 -14.2 -19.5 -24.4 -29.2 -33.8 -37.9 -42.2 -46.7
|S22| 0.68 0.67 0.64 0.60 0.55 0.51 0.48 0.46 0.44 0.42 0.38 0.35 0.32 0.30 0.28 0.26 0.25 0.26 0.27 0.29 0.31 0.33 0.35 0.36 0.38 0.42 0.46
S22 Ang -9.5 -18.1 -26.2 -34.5 -43.3 -50.9 -57.2 -62.6 -68.1 -75.1 -84.3 -95.0 -106.2 -117.6 -129.3 -141.5 -154.6 -170.3 172.9 157.4 144.0 133.5 123.1 112.6 102.0 91.7 83.7
Note : De-embedded to device pins
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101225 Rev. D
4
SPF-2086TK Low Noise FET
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number SPF-2086TK Reel Size 7" Devices/Reel 1000
PCB Pad Layout
Part Symbolization The part will be symbolized with the "P2T" designator and a dot signifying pin 1 on the top surface of the package.
P2T
Pin Designation
1 2 3 4 Gate Source Drain Source
Package Dimensions
P2T
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101225 Rev. D
5

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