 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VS1S2 (V) rS1S2(on) () 0.025 @ VGS = 10 V 30 0.030 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V FEATURES IS1S2 (A) 6.2 5.7 4.5 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection APPLICATIONS D Battery Protection Circuitry - 1-2 Cell Li+/LiP S1 TSSOP-8 S1 S1 S1 G1 1 2 3 4 Top View D 8 S2 7 S2 6 S2 5 G2 G1 R SI6876EDQ R G2 N-Channel S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Source1--Source2 Voltage Gate-Source Voltage Continuous Source1--Source2 Current (TJ = 150_C)a Pulsed Source1-Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C IS1S2 ISM 1.78 1.14 - 55 to 150 Symbol VS1S2 VGS 10 secs T30 "12 6.2 5.0 30 Steady State Unit V 5.0 4.0 A 1.19 0.76 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec. Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Source)a Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71822 S-20802--Rev. B, 01-Jul-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 55 85 35 Maximum 70 105 45 Unit _C/W 1 SI6876EDQ Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Source Current On-State Source Currenta IS1S2 IS(on) VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 10 V, ID = 6.2 A Source1-Source2 On-State Resistancea rS1S2(on) VGS = 4.5 V, ID = 5.7 A VGS = 2.5 V, ID = 4.5 A Forward Transconductancea gfs VDS = 10 V, ID = 6.2 A 20 0.020 0.024 0.037 39 0.025 0.030 0.050 S W 0.45 1.5 "500 "10 1 25 V nA mA mA A Symbol Test Conditions Min Typ Max Unit Dynamicb Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 1.3 3 10 5.2 2.5 6 20 10 ms Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 Gate Current vs. Gate-Source Voltage I GSS - Gate Current (mA) 1,000 6 I GSS - Gate Current (mA) 100 TJ = 150_C 4 10 1 TJ = 25_C 2 0.1 0 0 4 8 12 16 20 0.01 0 4 8 12 16 20 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71822 S-20802--Rev. B, 01-Jul-02 www.vishay.com 2 SI6876EDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 3 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Vishay Siliconix Transfer Characteristics 18 18 12 2V 6 12 TC = 125_C 6 25_C - 55_C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.070 1.6 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance ( W ) r DS(on) - On-Resistance (W) (Normalized) 30 0.056 VGS = 10 V 0.042 VGS = 4.5 V 1.4 1.2 0.028 1.0 0.014 VGS = 2.5 V 0.8 0.000 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 ID - Drain Current (A) TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage 0.10 0.4 Threshold Voltage r DS(on) - On-Resistance ( W ) 0.08 V GS(th) Variance (V) IS1S2 = 6.2 A 0.06 0.2 IS1S2 = 250 mA - 0.0 0.04 - 0.2 0.02 - 0.4 0.00 0 2 4 6 8 10 - 0.6 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Document Number: 71822 S-20802--Rev. B, 01-Jul-02 www.vishay.com 3 SI6876EDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 100 80 Power (W) 60 40 20 0 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 85_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71822 S-20802--Rev. B, 01-Jul-02 |
Price & Availability of SI6876EDQ
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |