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IGBT with Diode ISOPLUS247TM
(Electrically Isolated Backside) Short Circuit SOA Capability
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C
IXSR 40N60CD1
VCES IC25
VCE(SAT) tfi(typ)
= 600 = 62 = 2.5 = 70
V A V ns
Maximum Ratings 600 600 20 30 62 37 150 ICM = 80 @ 0.8 VCES 10 210 -55 ... +150 150 -55 ... +150 2500 300 V V V V A A A A ms W C C C V~ C
ISOPLUS 247TM (IXSR) E 153432
G
C
E
Isolated backside*
G = Gate, E = Emitter
C = Collector,
* Patent pending
Features * * * * * DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight PLUS247
5
g
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 150C 7 650 5 100 2.5 V V mA mA nA V * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * AC motor speed control * DC servo and robot drives * DC choppers Advantages * Easy assembly * High power density * Very fast switching speeds for high frequency applications
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IT , VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98673A (7/00)
(c) 2000 IXYS All rights reserved
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IXSR 40N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3700 VGS = 0 V, VDS ,25 V, = f = 1 MHz 440 60 190 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IT, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 88 50 50 70 70 1.0 50 50 2.2 140 140 1.7 140 120 1.7 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.6 K/W K/W
Dim. 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080
ISOPLUS 247 (IXSR) OUTLINE
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IT; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
0.15
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Note: 1. IT = 40A Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 2 35 2.5 V A ns 1.15 K/W
IF = IT, VGE = 0 V, Pulse test 300 ms, duty cycle d 2 % IF = IT, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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