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IGBT with Diode ISOPLUS 247TM
Short Circuit SOA Capability
IXSR 35N120BD1
(Electrically Isolated Backside)
VCES IC25 VCE(sat) tfi(typ)
= 1200 V = 70 A = 3.6 V = 180 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg VISOL
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE= 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 30 H VGE= 15 V, VCE = 720 V, TJ = 125C RG = 22 , non repetitive TC = 25C IGBT Diode
Maximum Ratings 1200 1200 20 30 70 30 140 ICM = 90 @ 0.8 VCES 10 250 150 -55 ... +150 150 -55 ... +150 V V V V A A A A s W W C C C V~ C g Features DCB Isolated mounting tab Meets TO-247AD package outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications G = Gate, E = Emitter
G C
ISOPLUS 247TM E 153432
E
Isolated backside*
C = Collector,
* Patent pending
50/60 Hz, RMS
t = 1 min leads-to housing
2500 300 5
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 3 TJ = 25C TJ = 150C 6 V V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 250 A, VCE = VGE
Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density
V CE = 0.8 * VCES V GE = 0 V V CE = 0 V, VGE = 20 V IC = IT, VGE = 15 V
1 mA 3 mA 100 3.6 nA V
Device must be heatsunk for high temperature measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions
(c) 2002 IXYS All rights reserved
98741A (01/02)
IXSR 35N120BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 75 120 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IT, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IT, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 33 49 36 27 160 180 5 38 29 6 240 340 9 300 300 S pF pF pF nC nC nC ns ns ns ns
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 OUTLINE
gfs Ciss Coss Crss Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC= IT; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
9 mJ ns ns mJ ns ns mJ 0.5 K/W
0.15
K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.75 1.85 7 40 14.3 V A ns 0.83 K/W
IF = IT, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IT, VGE = 0 V, -diF/dt = 100 A/s VR = 100 V IF = 1 A; -di/dt = 200 A/s; VR = 30 V
Note: 1. IT = 35A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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