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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES Power dissipation PCM : 0.2 W Tamb=25ae(c) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J T stg: -55aeto +150ae
Unit : mm
TRANSISTORPNP (c)
SOT 23
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(c) 1 VCE(sat)
unless
Test
otherwise
MIN -60 -50 -5
specified(c)
TYP MAX UNIT V V V -0.1 -0.1 |I A |I A
conditions
Ic= -5 |I IE=0 A IC= -1 mA , IB=0
IE= -50 |I AIC=0 VCB= -60 V , IE=0 VEB= -5 V , IC=0
VCE= -6 V, IC= -1mA IC= -100mA, IB=- 10m A VCE= -6 V, IC=-10mA
120 -0.18
475 -0.3 V
Transition frequency
f
T
50
MHz
f = 30MHz
CLASSIFICATION OF HFE(1)
Rank Range L 120-200 H 200-475
MARKING
CS
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
|E
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100

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