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PR
E
SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR
LIM
RY NA CZT7120 I
Central
TM
Semiconductor Corp.
DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switching applications. MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (TA=250C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC UNITS
ELECTRICAL CHARACTERISTICS: (TA=250C) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE hFE fT TEST CONDITIONS
R P
IC=50A IC=10mA
LI E
IN M
PD TJ, Tstg JA MIN 120 70 7.0
RY A
70 7.0 3.0 2.0 -65 to +150 62.5
0
120
V V V A W
0
C
C/W
TYP
MAX 1.0 1.0
UNITS A A V V V
VCB=80V VEB=5.0V 156 118 24 295 0.93 100 100 40 8.0 210 162 65
IE=50A IC=2.0A, IB=200mA IC=2.0A, VCE=1.0V VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA VCE=5.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz
500 1.1 300
mV V
MHz
R2 (17-June 2004)
Central
TM
Semiconductor Corp.
P
L RE
IM
Y AR IN CZT7120
SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H I J K L M
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0 10 0 10 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15 15 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3)
R2 (17-June 2004)

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