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| CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING CODE: FULL PART NUMBER SOT-223 CASE APPLICATIONS: * General purpose switching and amplification * Telephone applications FEATURES: * High Collector Breakdown Voltage 250V * Low Leakage Current 50nA Max * Low Saturation Voltage 100mV Max @ 50mA * Complementary Device CZT5401E * SOT-223 Surface Mount Package MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA 250 220 6.0 600 2.0 -65 to +150 62.5 UNITS V V V mA W C C/W SYMBOL ICBO ICBO ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100C VEB=4.0V IC=100A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA 250 220 6.0 MAX 50 50 50 UNITS nA A nA V V V BVCBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) BVEBO IEBO 75 100 1.00 1.00 mV mV V V Enhanced Specification R0 (10-May 2006) Central TM CZT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR Semiconductor Corp. SYMBOL ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz 120 120 75 25 100 MAX UNITS hFE hFE hFE hFE fT Cob Cib hfe NF 300 300 6.0 20 MHz pF pF 50 200 8.0 dB Enhanced Specification SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R0 (10-May 2006) |
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