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| CYTA44D SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CYTA44D type consists of two (2) isolated NPN high voltage silicon transistors packaged in an epoxy molded SOT-228 surface mount case. Manufactured by the epitaxial planar process, this SUPERminiTM device is ideal for high voltage applications. MARKING CODE: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg JA -65 to +150 62.5 unless otherwise noted) MIN MAX 100 500 100 450 450 400 6.0 0.40 0.50 0.75 0.75 40 50 200 45 20 20 7.0 130 C C/W SYMBOL VCBO VCEO VEBO IC PD 450 400 6.0 300 2.0 UNITS V V V mA W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C SYMBOL TEST CONDITIONS ICBO VCB=400V ICES VCE=400V IEBO VBE=4.0V BVCBO IC=100A BVCES IC=100A BVCEO IC=1.0mA BVEBO IE=10A VCE(SAT) IC=1.0mA, IB=0.1mA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC=50mA hFE VCE=10V, IC=100mA fT VCE=10V, IC=10mA, f=10MHz Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz UNITS nA nA nA V V V V V V V V MHz pF pF R1 (11-August 2005) Central TM CYTA44D SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS Semiconductor Corp. SOT-228 CASE - MECHANICAL OUTLINE LEAD CODE: 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) COLLECTOR 5) EMITTER Q2 6) BASE Q2 7) EMITTER Q1 8) BASE Q1 Q1 Q1 Q2 Q2 MARKING CODE: FULL PART NUMBER R1 (11-August 2005) |
Price & Availability of CYTA44D
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