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| Datasheet File OCR Text: |
| PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 6,474 PRINCIPAL DEVICE TYPES CS18D BRX49 CS92D CS89M GLASS PASSIVATED MESA 41 x 41 MILS 8.7 MILS 0.6 MILS 18 x 8 MILS 7.1 x 7.1 MILS Al - 45,000A Au - 10,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) PROCESS CPS041 Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) |
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