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| AP9475M Advanced Power Electronics Corp. Simple Drive Requirement D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G 60V 40m 6.9A Lower Gate Charge Fast Switching Characteristic D D D SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 60 25 6.9 5.5 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 200517041 AP9475M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=1mA Min. 60 1 - Typ. 0.073 10 19 5 10 11 6 35 10 160 116 1.58 Max. Units 40 50 3 1 25 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=25V ID=6A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1670 2670 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=2A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/s Min. - Typ. 34 50 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. AP9475M 100 80 T A =25 C ID , Drain Current (A) 80 o 10V 6.0V ID , Drain Current (A) 70 T A = 150 o C 10V 6.0V 60 50 60 5.0V 4.5V 5.0V 4.5V 40 40 30 20 20 V G =3.0V V G =3.0V 10 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 46 1.6 44 ID=4A T A =25 Normalized R DS(ON) 1.4 ID=6A V G =10V 42 RDS(ON) (m ) 1.2 40 38 1.0 36 0.8 34 32 3 5 7 9 11 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.50 6 5 Normalized VGS(th) (V) 1.25 4 IS(A) 3 1.00 T j =150 C 2 o T j =25 C o 0.75 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0.50 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9475M f=1.0MHz 14 10000 ID=6A 12 VGS , Gate to Source Voltage (V) 10 V DS = 30 V V DS = 38 V V DS = 48 V C (pF) 1000 C iss 8 6 4 2 C oss C rss 100 0 10 20 30 40 50 1 5 9 13 17 21 25 29 0 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.1 0.02 0.01 PDM 0.01 t T Single Pulse T A =25 o C Single Pulse 0.01 0.1 1 10 1s DC 100 1000 Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125/W 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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