![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE(sat) tfi(typ) H1 = 1700 V = 16 A = 5.0 V = 40 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TJ = 125C, VCE = 1200 V; VGE = 15 V, RG = 22 TC = 25C Maximum Ratings 1700 1700 20 30 16 8 40 ICM = 40 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector s W C C C C C 6 4 g g G = Gate, E = Emitter, Mounting torque (M3) TO-247 1.13/10Nm/lb.in. 300 250 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Weight TO-247 TO-268 Test Conditions Symbol Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 3.0 5.0 50 100 750 1.5 100 TJ = 125C 4.0 4.8 5.0 V V A A A mA nA V V Features International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current handling capability MOS Gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification SONICTM fast recovery copack diode Applications Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99235(10/04) BVCES VGE(th) ICES IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 * VCES 16N170A VGE = 0 V, Note 1 16N170AH1 TJ = 125C 16N170A 16N170AH1 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IGES VCE(sat) (c) 2004 IXYS All rights reserved IXGH/IXGT IXGH/IXGT Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 16N170A 16N170AH1 83 125 30 65 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 24 Inductive load, TJ = 25C IC = IC25, VGE = 15 V RG = 10 , VCE = 0.5 VCES Note 3 36 57 200 40 0.9 Inductive load, TJ = 125C IC = IC25, VGE = 15 V RG = 10 , VCE = 0.5 VCES Note 3 16N170A 16N170AH1 38 59 1.5 2.5 200 55 1.1 350 150 S pF pF pF pF nC nC nC ns ns ns ns Dim. 16N170A 16N170AH1 TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC25; VCE = 10 V Note 2 P e 1.5 mJ ns ns mJ mJ ns ns mJ 0.65 K/W K/W Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 Reverse Diode (FRED) Symbol VF IRM t rr IRM t rr RthJC Notes: 1. 2. 3. Test Conditions IF = 20 A, VGE = 0 V IF = 20 A; -diF/dt = 150 A/s VGE = 0 V; VR = 1200 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 125C 2.5 2.5 15 80 TJ = 125C 20 200 2.95 V V A ns A ns 0.9 K/W Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 % Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 |
Price & Availability of IXGT16N170AH1
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |