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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 1/4 HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 625 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ........................................................................................................................... 40 V VCEO Collector to Emitter Voltage ........................................................................................................................ 30 V VEBO Emitter to Base Voltage .............................................................................................................................. 10 V IC Collector Current ........................................................................................................................................ 500 mA Electrical Characteristics (TA=25C) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test Condition IC=0.1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=40V, IE=0 VEB=10V, IC=0 IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=1mA IC=100mA, VCE=2V, f=100MHz VCB=10V, f=1MHz, IE=0 Min. 40 30 10 30K Typ. 1.5 220 5 Max. 1 1 1 2 V V MHz pF Unit V V V uA uA *Pulse Test: Pulse Width 380us, Duty Cycle2% HBC517 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 hFE @ VCE=2V 75 C o Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 2/4 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=100IB Saturation Voltage (mV) hFE 125 C o 25 C o 100 125 C 75 C 25 C o o o 10000 1 10 100 1000 10 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=100IB On Voltage & Collector Current 10000 VBE(on) @ VCE=2V Saturation Voltage (mV) 25 C 1000 125 C o o On Voltage (mV) 25 C 1000 o 75 C o 125 C o 75 C o 100 1 10 100 1000 100 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) PD - Ta 0.7 0.6 PD(W), Power Dissipation 0.5 0.4 0.3 0.2 0.1 0 0 50 100 o 150 200 Ambient Temperature-Ta ( C) HBC517 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 3/4 2 Marking: Pb Free Mark Pb-Free: " . " (Note) Normal: None H BC 517 Control Code 3 Date Code Note: Green label is used for pb-free packing C D Pin Style: 1.Collector 2.Base 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I 1 2 3 Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5 *2 *2 H I E F G *: Typical, Unit: mm 1 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm H2 H2 H2A H2A D2 A H3 H4 H L L1 H1 F1F2 T2 T T1 P1 P P2 D1 D W1 W Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBC517 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HA200217 Issued Date : 2002.09.01 Revised Date : 2005.02.04 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HBC517 HSMC Product Specification |
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