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| GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200V Rating 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 400A 800A APPLICATIONS s s s s High Power Inverters Motor Controllers 5(E1) 2(E) Induction Heating Resonant Converters 3(G1) 1(C) 4(C1) The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS12 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Single switch circuit diagram 4 5 3 2 1 ORDERING INFORMATION Order As: GP400LSS12 Note: When ordering, please use the compete part number. Outline type code: L (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP400LSS12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Collector current Peak collector current Max. transistor power dissipation Isolation voltage DC, Tcase = 75C 1ms, Tcase = 80C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1200 20 400 800 2980 2500 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 -40 150 125 125 5 2 C C C Nm Nm 15 C/kW 80 C/kW Min. Max. 42 Units C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 20mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC, Tcase = 50C tp = 1ms, Tcase = 80C IF = 400A IF = 400A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 2.7 3.2 2.2 2.3 45 15 Max. 1 25 2 6.5 3.5 4 400 800 2.4 2.5 Units mA mA A V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP400LSS12 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 400A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 700 120 60 600 150 35 30 Max. 850 160 80 750 200 75 40 Units ns ns mJ ns ns mJ C Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 400A, VR = 50% VCES, dIF/dt = 2000A/s-1 Test Conditions IC = 400A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 3.3 L ~ 100nH Min. Typ. 900 200 85 700 180 55 55 Max. 1100 250 100 850 230 80 70 Units ns ns mJ ns ns mJ C 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 800 700 600 Collector current, IC - (A) Collector current, IC - (A) 800 Vge = 20/15/12/10V Common emitter Tcase = 125C Common emitter Tcase = 25C 700 600 500 400 300 200 100 0 0 500 400 300 200 100 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 80 70 60 Turn-on energy, Eon - (mJ) Conditions: Tcase = 125C, VCE = 600V, VGE = 15V 90 A B C Turn-off energy, Eoff - (mJ) 80 70 60 50 40 30 20 Conditions: Tcase = 125C, VCE = 600V, VGE = 15V A C B 50 40 30 20 10 0 50 A : Rg = 6.2 B : Rg = 4.7 C : Rg = 3.3 100 150 200 250 300 350 Collector current, IC - (A) 400 450 10 0 A : Rg = 6.2 B : Rg = 4.7 C : Rg = 3.3 0 50 100 150 200 250 300 Collector current, IC - (A) 350 400 Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP400LSS12 40 Diode turn-off energy, Eoff(Diode) - (mJ) Conditions: VCE = 600V, 35 VGE = 15V, Rg = 4.7 30 Tcase = 125C 25 1000 900 800 Switching times, ts - (ns) 700 600 500 400 300 200 td(on) Conditions: Tcase = 125C, VCE = 600V VGE = 15V Rg = 3.3 td(off) 20 Tcase = 25C 15 10 5 0 0 100 200 300 Collector current, IC (A) 400 100 0 0 50 tf tr 100 150 200 250 300 Collector currrent, IC - (A) 350 400 Fig. 7 Typical diode turn-off energy vs collector current Fig.8 Typical switching characteristics 800 700 600 Tj = 25C 500 400 300 200 Tj = 125C Collector current, IC - (A) 1000 900 800 Forward current, IF - (A) 700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg = 4.7* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200 100 100 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 3.5 0 0 Fig. 9 Diode typical forward characteristics Fig. 10 Reverse bias safe operating area 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 10000 100 Transient thermal impedance, Zth (j-c) - (C/kW ) Diode Transistor 1000 Collector current, IC - (A) IC max. (single pulse) 10 IC ax m 100 tp = 50s tp = 100s in nt uo us C .D o (c 1 10 tp = 1ms ) 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 0.1 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig. 11 Forward bias safe operating area Fig. 12 Transient thermal impedance 1000 900 800 Inverter phase current, IC(PK) - (A) DC collector current, IC - (A) PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 700 600 700 600 500 400 300 200 Conditions: 100 Tj = 125C, Tc = 75C, Rg = 3.3, VCC = 600V 0 1 10 fmax - (kHz) 500 400 300 200 100 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP400LSS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 46.5 4x O6.5 3.5x6 4 27 6x5.5 16 46.5 1 5 61.4 48 40 20 3 2 24 2x M6 3x M4 20 29 23 5 106.4 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M4): 2Nm (17lbs.ins) Module outline type code: L 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 36max www.dynexsemi.com GP400LSS12 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving Dynex Semincoductor IGBT modules with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP400LSS12 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS5306-2 Issue No. 2.2 October 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com |
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