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DG9414/9415
Vishay Siliconix
Single 4 x 1 and Dual 2 x 1 Multiplexers
FEATURES
D D D D D D Low Voltage Operation (+2.7 to +12 V) Low On-Resistance - rDS(on): 14 W Low Power Consumption TTL Compatible ESD Protection >2000 V (Method 3015.7) Available in TSSOP-10 (aka MSOP-10)
BENEFITS
D High Accuracy D Simple Logic Interface D Reduce Board Space
APPLICATIONS
D D D D D D Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Networking Equipment
DESCRIPTION
The DG9414, a single 4 to 1 multiplexer, and the DG9415, a dual 2 x 1 multiplexer, are monolithic CMOS analog devices designed for high performance low voltage operation. Combining low power, high speed, low on-resistance and small physical size, the DG9414 and DG9415 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. Both the DG9414 and DG9415 are built on Vishay Siliconix's low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 volts. An epitaxial layer prevents latchup. Break-before-make is guaranteed for DG9415.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG9414DQ
NO2 NO3 NO1 EN GND 1 2 3 4 5 Logic 10 9 8 7 6 V+ COM NO0 A0 A1 NO1 COM1 NC1 EN GND 1 2 3 4 5 Logic
DG9415DQ
10 9 8 7 6 V+ COM2 NO2 NC2 A0
EN
1 0 0 0 0
A1
X 0 0 1 1
A0
X 0 1 0 1
ON SWITCH
None NO0 NO1 NO2 NO3
EN
1 0 0
A0
X 0 1
ON SWITCH
None NC1 NC2 NO1 NO2
X = Don't Care
X = Don't Care
ORDERING INFORMATION
Temp Range
-40 to 85C 40
Package
MSOP-10 MSOP 10
Part Number
DG9414DQ DG9415DQ
Document Number: 71766 S-03220--Rev. F, 17-Feb-03
www.vishay.com
1
DG9414/9415
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA (Pulsed at 1ms, 10% duty cycle) ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board.
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Matchd rON Flatnessd, f NO or NC Off Leakage Current g COM Off Leakage Current g Channel-On Leakage Current g VANALOG rON DrON rON Flatness INO/NC(off) ICOM(off) ICOM(on) V+ = 2.7 V, VCOM = 1.0 V/1 5 V/2.0 V 27V 1 0 V/1.5 V/2 0 INO or INC = 5 mA Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 63 3 14 V+ 97 101 11 33 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.4 Ve
Tempa
Minc
Typb
Maxc
Unit
V+ = 3.3 V, VNO or VNC = 0.3 V / 3 V VCOM = 3 V / 0.3 V V+ = 3.3 V VCOM = VNO or VNC = 0.3 V / 3 V
Digital Control
Input Currentg Input High Voltaged Input Low Voltaged IINL or IINH VINH VINL VIN = 0 or V+ Full Full Full -1.0 1.6 0.4 V 1.0 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Transition Time Charge Injectiond Off-Isolation Channel-to-Channel Crosstalk (DG9415) NO, NO NC Off Capacitance COM Off Capacitance COM On Capacitance tON tOFF tD ttrans QINJ OIRR XTALK CNO(off), CNC(off) CCOM( ff) COM(off) CCOM( ) COM(on) f = 1 MHz VNO = 1.5 V/0 V, VNC = 0 V/1.5 V CL = 1 nF, Vgen = 0 V, Rgen = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz RL = 50 W, f = 1 MHz DG9414 DG9415 DG9414 DG9415 DG9414 DG9415 VNO or VNC = 1.5 V Room Full Room Full Room Room Full Room Room Room Room Room Room Room Room Room 7 102 45 78 81 3 -58 -64 11 10 26 13 43 25 pF dB 128 144 pC 125 142 68 75 ns
Power Supply
Power Supply Range Power Supply Currenth V+ I+ V+ = 3.3 V, VIN = 0 or 3.3 V Full 2.7 3.3 1.0 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12-V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. www.vishay.com Document Number: 71766 S-03220--Rev. F, 17-Feb-03
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DG9414/9415
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Match rON Flatnessf VANALOG rON DrON rON Flatness INO/NC(off) ICOM(off) ICOM(on) V+ 4 5 V V = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V 1 5 V/2 5 V/3 5 INO or INC = 10 mA Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 33 2 10 V+ 56 60 10 20 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minc
Typb
Maxc
Unit
NO or NC Off Leakage Currentg COM Off Leakage Currentg Channel-On Leakage Currentg
V+ = 5.5 V, VNO or VNC = 1 V / 4.5 V VCOM = 4.5 V / 1 V
V+ = 5.5 V, VCOM = VNO or VNC = 1 V / 4.5 V
Digital Control
Input Currenth Input High Voltaged Input Low Voltaged IINL or IINH VINH VINL VIN = 0 or V+ Full Full Full -1.0 1.8 0.6 V 1.0 mA
Dynamic Characteristics
Turn-On Timeh Turn-Off Timeh Break-Before-Make Timeh Transition Time Off-Isolation Channel-to-Channel Crosstalk (DG9415) Charge Injectiond NO, NO NC Off Capacitance tON tOFF tD ttrans OIRR XTALK QINJ CNO(off), CNC(off) CCOM( ff) COM(off) CCOM( ) COM(on) f = 1 MHz VNO = 3 V/0 V, VNC = 0 V/3 V RL = 50 W, CL = 5 pF, f = 1 MHz RL = 50 W, f = 1 MHz CL = 1 nF, Vgen = 0 V, Rgen = 0 W DG9414 DG9415 DG9414 COM Off Capacitance DG9415 DG9414 COM On Capacitance DG9415 VNO or VNC = 3.0 V Room Full Room Full Room Room Full Room Room Room Room Room Room Room Room Room 7 56 25 34 47 -58 -64 6 11 10 25 13 42 24 pF dB pC 77 84 ns 77 86 46 50 ns
Power Supply
Power Supply Range Power Supply Currenth V+ I+ V+ = 5.5 V, VIN = 0 or 5.5 V Full 4.5 5.5 1.0 V mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12-V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test. Document Number: 71766 S-03220--Rev. F, 17-Feb-03 www.vishay.com
3
DG9414/9415
Vishay Siliconix
SPECIFICATIONS (V+ = 12 V)
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Ranged rON Match rON Flatnessd, f On-Resistance VANALOG DrON rON Flatness rON INO(off), INC(off) ICOM(off) ICOM(on) V+ = 10.8 V, INO, INC = 25 mA, VCOM = 2/9 V Full Room Room Room Full Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 1 1 14 12 9 10 17 19 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ V = 12 V, VIN = 0.8 V, 2.4 Ve V V
Tempa
Minc
Typb
Maxc
Unit
Switch Off Leakage Current Channel On Leakage Current
VCOM = 1/11 V VNO, VNC = 11/1 V
VNO, VNC = VCOM = 11/1 V
Digital Control
Input Current Input High Voltaged Input Low Voltaged IINL or IINH VINH VINL VIN = 0 or V+ Full Full Full -1 2.4 0.8 V 1 mA
Dynamic Characteristics
Turn-On Timeh Turn-Off Timeh Break-Before-Make Time Delayh Transition Time Charge Injectiond Off Isolationd Channel-to-Channel Crosstalkd NO, NO NC Off Capacitanced tON tOFF tD ttrans QINJ OIRR XTALK CNO(off), CNC(off) CCOM( ff) COM(off) COM( ) OM(on) VIN = 0 or V+ f = 1 MHz V+, RL = 300 W , CL = 35 pF VNO, VNC = 5 V See Figure 2 DG419L Only, VNC, VNO = 5 V RL = 300 W , CL = 35 pF VNO = 5 V/0 V, VNC = 0 V/5 V Vg = 0 V, Rg = 0 W , CL = 1 nF RL = 50 W , CL = 5 pF f = 1 MHz DG9414 DG9415 DG9414 COM Off Capacitance COM On Capacitanced DG9415 DG9414 DG9415 Room Full Room Full Room Room Full Room Room Room Room Room Room Room Room Room 2 33 17 55 59 40 41 ns 24 29 13 -58 -64 10 10 24 13 40 23 pF dB 56 59 pC
Power Supplies
Positive Supply Current I+ VIN = 0 or 12 V Full 1 mA
Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 12-V leakage testing, not production tested. h. Guaranteed by worst case test conditions and not subject to test.
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Document Number: 71766 S-03220--Rev. F, 17-Feb-03
DG9414/9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
80 T = 25_C 70 r ON - On-Resistance ( W ) 60 50 40 30 20 10 0 0 3 6 9 12 VCOM - Analog Voltage (V) V+ = 5.0 V IS = 10 mA V+ = 12.0 V IS = 25 mA V+ = 3.0 V IS = 5 mA r ON - On-Resistance ( W ) 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 VCOM - Analog Voltage (V) V+ = 3.0 V IS = 5 mA A B C V+ = 5.0 V IS = 10 mA A B C V+ = 12.0 V IS = 25 mA B A 80 A = 85_C B = 25_C C = -40_C
rON vs. Analog Voltage and Temperature
C
Supply Current vs. Temperature
10000 VAX, VEN = 0 V I+ - Supply Current (nA) 1000 10 m 1m 100 m 10 m 1m 100 n 10 n 1 -60
Supply Current vs. Input Switching Frequency
V+ = 12 V
I+ - Supply Current (nA)
100
V+ = 12.0 V
10
V+ = 5.0 V
-40
-20
0
20
40
60
80
100
1n 10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
1000 V+ = 12 V 60 Leakage Current (pA) 100 ICOM(off) INO(off), INC(off) 10 ICOM(on) Leakage Current (pA) 100
Leakage vs. Analog Voltage
V+ = 12.0 V
20
ICOM(off)
-20 ICOM(on) -60
INO(off)/INC(off)
1 -60
-100 -40 -20 0 20 40 60 80 100 0 2 4 6 8 10 12
Temperature (_C) Document Number: 71766 S-03220--Rev. F, 17-Feb-03
VCOM, VNO, VNC - Analog Voltage (V) www.vishay.com
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DG9414/9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transistion Time vs. Temperature (DG9414)
120 120
Transistion Time vs. Temperature (DG9415)
100
tTRANS- V+ = 3 V
100 tTRANS- V+ = 3 V
80 tTRANS+ V+ = 3 V 60 tTRANS- V+ = 5 V 40 tTRANS+ V+ = 12 V 20 tTRANS- V+ = 12 V tTRANS+ V+ = 5 V
80
tTRANS+ V+ = 3 V
60 tTRANS- V+ = 5 V 40 tTRANS+ V+ = 12 V 20 tTRANS- V+ = 12 V tTRANS+ V+ = 5 V
0 -60
-40
-20
0
20
40
60
80
100
0 -60
-40
-20
0
20
40
60
80
100
Temperature (_C)
Temperature (_C)
Switching Time vs. Temperature
140 120 tON V+ = 3 V 100 80 60 40 tON V+ = 12 V 20 tOFF V+ = 12 V 0 -60 -90 -40 -20 0 20 40 60 80 100 100 k tOFF V+ = 5 V Loss, OIRR, X TALK (dB) -10 10
Insertion Loss, Off -Isolation Crosstalk vs. Frequency (DG9414)
t ON , t OFF - Switching Time (ns)
Loss
-30
tON V+ = 5 V
tOFF V+ = 3 V
-50 XTALK -70 OIRR V+ = 12 V RL = 50 W
1M
10 M Frequency (Hz)
100 M
1G
Temperature (_C)
Insertion Loss, Off -Isolation Crosstalk vs. Frequency (DG9415)
10 Loss VT - Switching Threshold (V) 3.0
Switching Threshold vs. Supply Voltage
-10 Loss, OIRR, X TALK (dB)
2.5
2.0
-30 XTALK OIRR -50
1.5
1.0
-70
V+ = 12 V RL = 50 W
0.5
-90 100 k 1M 10 M Frequency (Hz) 100 M 1G
0.0 2 4 6 8 10 12 14 V+ - Supply Voltage (V) Document Number: 71766 S-03220--Rev. F, 17-Feb-03
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6
DG9414/9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Analog Voltage (DG9414)
50 50
Charge Injection vs. Analog Voltage (DG9415)
Q - Charge Injection (pC)
30
Q - Charge Injection (pC)
30
10
V+ = 3 V V+ = 5 V
10
V+ = 3 V V+ = 5 V
-10
-10
-30
V+ = 12 V
-30
V+ = 12 V
-50 0 2 4 6 8 10 12
-50 0 2 4 6 8 10 12
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
VVIN Level Shift/ Drive V+
D
GND
Figure 1.
TEST CIRCUITS
V+ Logic Input Switch Output VOUT RL 300 W CL 35 pF VOUT 90% VINH VINL Switch Input VIN V+ NO or NC IN GND Switch Output 0V tON COM tOFF 50% tr <5 ns tf <5 ns
0.9 x VOUT
CL (includes fixture and stray capacitance) VOUT = VIN RL RL + rON
Note:
Logic input waveform is inverted for switches that have the opposite logic sense control
Figure 2. Switching Time
Document Number: 71766 S-03220--Rev. F, 17-Feb-03
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7
DG9414/9415
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input VO RL 300 W CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN GND COM
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V V+ NO or NC VS1 VS2 NC or NO RL 300 W CL 35 pF VS1 V01 Switch Output CL (includes fixture and stray capacitance) VO = VS RL RL + rON VS2 V02 10% 90% COM VO Logic VINH Input VINL 50% tr <5 ns tf <5 ns
tTRANS+
tTRANS-
IN GND
Figure 4. Transition Time
V+ VO Rg V+ COM IN GND NO or NC CL 1 nF VO IN OFF ON
DVO
OFF
Vg
Q = DVO x CL IN dependent on switch configuration Input polarity determined by sense of switch.
VIN = 0 - V+
Figure 5. Charge Injection
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8
Document Number: 71766 S-03220--Rev. F, 17-Feb-03
DG9414/9415
Vishay Siliconix
TEST CIRCUITS
V+ C V+ VS Rg = 50 W IN 0 V or 2.4 V NC or NO VOUT VIN NO or NC COM 50 W
GND VOUT VIN
XTALK Isolation = 20 log C = RF bypass
Figure 6. Crosstalk
V+
V+
C
V+
C
NO or NC Rg = 50 W IN 0V, 2.4 V GND
COM
COM Meter RL 50 W 0 V, 2.4 V NO or NC GND IN HP4192A Impedance Analyzer or Equivalent f = 1 MHz
Off Isolation = 20 log C = RF Bypass
VCOM VNO/NC
Figure 7. Off Isolation
Figure 8. Source/Drain Capacitances
Document Number: 71766 S-03220--Rev. F, 17-Feb-03
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