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MID 550-12 A4 MDI 550-12 A4
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MID
3
IC25 = 670 A VCES = 1200 V VCE(sat) typ. = 2.3 V
MDI
3
1
2
3 11 10 9 8
1
8 9
1
11 10
2
2
E 72873
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot IGBT TJ Tstg VISOL
Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 80C TC = 80C, tp = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 1.8 W, non repetitive VGE = 15 V, TJ = 125C, RG = 1.8 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 1200 1200 20 30 670 460 920 10 ICM = 800 VCEK < VCES 2750 150 -40 ... +150 V V V V A A A ms A
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873
q q q q q q q q q q q q
Advantages W
q
C C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz.
q
space and weight savings reduced protection circuits
50/60 Hz, RMS t = 1 min t=1s IISOL 1 mA Insulating material: Al2O3 Mounting torque (module) (teminals)
4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 14 9.6 50 250 8.8
Typical Applications
q q
Md
q
AC and DC motor control power supplies welding inverters
dS dA a Weight
Creepage distance on surface Strike distance through air Max. allowable acceleration Typical
Data according to a single IGBT/FRED unless otherwise stated.
Additional current limitation by external leads
(c) 2000 IXYS All rights reserved
1-4
030
MID 550-12 A4 MDI 550-12 A4
Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 30 6.5 V V
Dimensions in mm (1 mm = 0.0394")
V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS
VGE = 0 V IC = 16 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 400 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz
21 mA mA 1.6 A V nF nF nF ns ns ns ns mJ mJ 0.05 K/W K/W
2.3 26 4 2 100 60 600 90 64 59 0.09
2.8
Inductive load, TJ = 125C IC = 400 A, VGE = 15 V VCE = 600 V, RG = 1.8 W
with heatsink compound
Equivalent Circuits for Simulation Free Wheeling Diode (FRED) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.4 1.9 2.6 2.0 750 460 300 200 0.18 V V A A A ns 0.09 K/W K/W
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.3 V; R0 = 3.2 mW Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 1.5 mW Thermal Response Conduction
VF IF IRM trr RthJC RthJS
IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 400 A, VGE = 0 V, -diF/dt = 3000 A/ms TJ = 125C, VR = 600 V
Anti Parallel Diode (FRED)
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.4 1.9 2.6 2.0 150 95 62 200 0.9 V V A A A ns 0.45 K/W K/W
IGBT (typ.) Cth1 = 0.90 J/K; Rth1 = 0.049 K/W Cth2 = 2.07 J/K; Rth2 = 0.001 K/W Free Wheeling Diode (typ.) Cth1 = 0.71 J/K; Rth1 = 0.090 K/W Cth2 = 1.30 J/K; Rth2 = 0.002 K/W
VF IF IRM trr RthJC RthJS
IF = 100 A, VGE = 0 V IF = 100 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms TJ = 125C, VR = 600 V
Additional current limitation by external leads
(c) 2000 IXYS All rights reserved
2-4
MID 550-12 A4 MDI 550-12 A4
900
A 800 IC 900 A 800 IC 700 600 500 400 300
9V 9V 13V 11V TJ = 125C
TJ = 25C
VGE=17V 15V 13V 11V
VGE=17V 15V
700 600 500 400 300 200 100 0 0.0 0.5 1.0 1.5 2.0 2.5
VCE
200 100
3.0 V
0 0.0
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
800
VCE = 20V
1600
TJ = 25C
A 700 IC
A 1400
TJ = 125C
600 500 400 300 200 100 0 5 6 7 8 9
VGE
IF
1200 1000 800 600 400 200 0
TJ = 25C
10
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
120
20
V VGE 15
VCE = 600V IC = 400A
300
ns
trr
A IRM
trr
80
200
10 40 5
IRM TJ = 125C VR = 600V IF = 400A
100
550-12
0 0 500 1000 1500
QG
0 2000 nC 0 200 400 600
A/ms 800 -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c) 2000 IXYS All rights reserved
3-4
MID 550-12 A4 MDI 550-12 A4
160
mJ Eon Eon 160 ns 120 td(on) t 80
VCE = 600V VGE = 15V RG = 1.8W TJ = 125C
160
mJ td(off) Eoff 120
800 ns 600 t
VCE = 600V VGE = 15V RG = 1.8W TJ = 125C
120
tr
80
80
Eoff
400
40
40
40
tf
200
0 0 200 400 600
IC
0 800 A 1000
0
0 200 400 600 IC 800
0 A 1000
Fig. 7 Typ. turn on energy and switching times versus collector current
200
mJ 400 ns 320 td(on) tr t 240 160 80 0 14 Eoff
Fig. 8 Typ. turn off energy and switching times versus collector current
100 mJ 80 60 40 20 0 0 2 4 6 8
RG tf 2000
VCE = 600V VGE = 15V IC = 400A TJ = 125C
160
Eon
VCE = 600V VGE = 15V IC = 400A TJ = 125C
Eon
Eoff td(off)
ns 1600 t 1200 800 400 0
120 80 40 0 0 2 4 6 8
RG
10
12
W
10
12
W 14
Fig. 9 Typ. turn on energy and switching times versus gate resistor
1000
A 0.1 K/W 0.01 ZthJC
Fig.10 Typ. turn off energy and switching times versus gate resistor
800
ICM
600 400 200 0 0 200 400 600 800 1000 1200 V VCE
RG = 1.8W TJ = 125C VCEK < VCES
diode
IGBT
0.001
0.0001
single pulse
0.00001 0.00001 0.0001
550-12
0.001
0.01 t
0.1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c) 2000 IXYS All rights reserved
4-4

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