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| RF Power Field Effect Transistor LDMOS, 1800 -- 2000 MHz, 90W, 26V 5/14/04 Preliminary MAPLST1820-090CF Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Output Power: 45W Power Gain: 13dB (typ.) Efficiency: 35% (typ.) Package Style P-240 Maximum Ratings Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W C C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.85 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1800 -- 2000 MHz, 90W, 26V MAPLST1819-090CF 5/14/04 Preliminary Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 26 Vdc, Id = 60 mA) Gate Quiescent Voltage (VDS = 26 Vdc, Id = 900 mA) Drain-Source On-Voltage (VGS = 10 Vdc, Id = 1 A) Forward Transconductance (VGS = 10 Vdc, Id = 1 A) DYNAMIC CHARACTERISTICS @ 25C Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) Common-Source Amplifier Gain (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Drain Efficiency (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Input Return Loss (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Output VSWR Tolerance (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gp EFF () IRL -- -- -- 13 35 -10 -- -- -- dB % dB Crss -- 4.5 -- pF V(BR)DSS IDSS IGSS VGS(th) VDS(on) VDS(on) Gm 65 -- -- 2 3 -- -- -- -- -- -- -- 0.10 7.0 -- 10 1 5 0.4 -- -- Vdc Adc Adc Vdc Vdc Vdc S Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1800 -- 2000 MHz, 90W, 26V MAPLST1819-090CF 5/14/04 Preliminary 14 13 12 11 1880MHz, 26VDC, IDQ=900mA 45 40 35 30 Gain (dB) 9 8 7 6 5 28 Gain Efficiency EVM 20 15 10 5 0 30 32 34 36 38 40 42 44 46 48 Pout (avg.) dBm Graph 1. EDGE: Gain and Error Vector Magnitude vs. Output Power -30 -35 -40 -45 ACPR (dBc) -50 -55 -60 -65 -70 -75 -80 35 1880MHz, 26VDC, IDQ=900mA 50 45 40 Efficiency (%) 35 ACPR (400KHz) ACPR (600kHz) Eff (%) 30 25 20 15 10 5 0 37 39 41 43 45 47 49 Pout (dBm) Graph 2. EDGE: Efficiency and Adjacent Channel Power Ratio vs. Output Power Eff./EVM (%) 10 25 3 RF Power LDMOS Transistor, 1800 -- 2000 MHz, 90W, 26V MAPLST1819-090CF 5/14/04 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
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