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| PD - 99438 HEXFET(R) Power MOSFET l l l l l l l IRFPC60LC-P D Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V G S RDS(on) = 0.40 ID = 16A Description This new series of Surface Mountable Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. Surface Mountable TO-247 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Max Reflow Temperature Max. 16 10 64 280 2.2 30 1000 16 28 3.0 -55 to + 150 225 Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ---- ---- ---- Typ. ---- 0.24 ---- Max. 0.45 ---- 40 Units C/W www.irf.com 1 04/25/02 IRFPC60LC-P Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 600 --- --- 2.0 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.63 --- V/C Reference to 25C, ID = 1mA --- 0.40 VGS = 10V, ID = 9.6A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 50V, ID = 9.6A --- 25 VDS = 600V, VGS = 0V A --- 250 VDS = 480V, VGS = 0V, TJ = 125C --- 100 VGS = 20V nA --- -100 VGS = -20V --- 120 ID = 16A --- 29 nC VDS = 360V --- 48 VGS = 10V, See Fig. 6 and 13 17 --- VDD = 300V 57 --- ID = 16A ns 43 --- RG = 4.3 38 --- RD = 18, See Fig. 10 D Between lead, 5.0 --- 6mm (0.25in.) nH G from package 13 --- and center of die contact S 3500 --- VGS = 0V 400 --- pF VDS = 25V 39 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 650 6.0 16 A 64 1.8 980 9.0 V ns C Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 16A, di/dt 140A/s, VDD V(BR)DSS, T J 150C VDD = 25V, starting TJ = 25C, L = 7.2mH R G = 25, IAS = 16A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFPC60LC-P 1 00 I , D rain-to-S ource C urrent (A ) D I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 10 BOTTOM 4.5V TOP 1 00 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 10 BOTTOM 4.5V TOP 4 .5V 1 1 0 .1 4 .5V 2 0 s P U L S E W ID T H T C = 25 C 0 .1 1 10 100 0 .1 0 .0 1 0 .0 1 0 .0 1 0 .0 1 20 s P U LS E W ID T H TC = 150 C 0 .1 1 10 100 V DS , D rain-to-So urce Voltage (V) V DS , D rain-to-So urce Voltage (V) Fig 1. Typical Output Characteristics, TC = 25oC Fig 2. Typical Output Characteristics, TC = 150oC R D S (o n) , D rain-to-S ource O n R esis tanc e (No rm alized) 100 3 .0 ID = 16A I D , D rain-to-So urce Cu rre nt (A ) T J = 1 50C 10 2 .5 2 .0 1 T J = 25 C 1 .5 1 .0 0 .1 0 .5 0 .0 1 4 5 6 7 V D S = 1 00 V 2 0 s P U L S E W ID TH 8 9 10 0 .0 -6 0 -4 0 -2 0 0 20 40 60 80 V G S = 10V 100 120 140 160 V G S , G ate-to-S ourc e V o ltag e (V ) T J , Junction Te m perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFPC60LC-P 7 00 0 20 6 00 0 , G ate-to-S ource V o ltage (V ) V GS = C is s = C rs s = C oss = 0V, f = 1MH z C gs + C g d , C d s S H O R T E D C gd C ds + C gd I D = 1 6A V D S = 3 60 V V D S = 2 40 V V D S = 1 20 V 16 C , C apacitan ce (pF ) 5 00 0 12 4 00 0 C iss 3 00 0 8 2 00 0 GS 4 1 00 0 0 1 C o ss C rss 10 1 00 V 0 0 30 60 F O R TE S T C IR C U IT S E E FIG U R E 13 90 12 0 V DS , Drain-to-S ource V oltage (V ) Q G , T otal G ate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 I S D , R everse D rain C urren t (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n ) I D , D rain C urrent (A ) 100 10 s 10 T J = 1 50 C T J = 25 C 100 s 10 1m s 1 0 0 .4 0 .8 1 .2 VG S = 0 V 1 .6 2 1 1 T C = 2 5C T J = 1 50 C S ingle P ulse 10 100 10m s 1000 100 00 V S D , Source -to-D rain V oltag e (V) VD S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFPC60LC-P VDS 16 RD VGS RG D.U.T. + - VDD ID , D rain C urrent (Am ps) 12 10 V Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit VDS 4 90% 0 25 50 75 100 125 150 TC , C ase T em perature (C ) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Therm al R es po nse (Z thJC ) D = 0 .5 0 0 .1 0 .2 0 0 .1 0 0 .0 5 0 .0 2 PD M 0 .0 1 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 / t2 t 1 t2 0 .0 0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFPC60LC-P L VDS D.U.T. 2400 E A S , S ingle P ulse A valan che E nergy (m J ) RG + VDD 2000 ID 7 .2 A 10A B OT TO M 16A TOP 10 V IAS tp 0.01 1600 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 1200 800 400 0 V D D = 5 0V 25 50 75 100 125 150 Starting T J , Juntion Te m perature (C ) IAS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFPC60LC-P Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFPC60LC-P TO-247AC Package Outline Dimensions are shown in millimeters (inches) 3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 10 ) M -A5 .50 (.21 7) 2 0 .30 (.80 0) 1 9 .70 (.77 5) 1 2 3 -C14.8 0 (.5 83 ) 14.2 0 (.5 59 ) 4 .30 (.1 70 ) 3 .70 (.1 45 ) LE AD A S SIG N ME NTS 1 2 3 4 G ATE DR A IN SO UR C E DR A IN -DDBM 5 .30 (.20 9) 4 .70 (.18 5) 2 .50 (.0 89 ) 1 .50 (.0 59 ) 4 1 5.9 0 (.6 26 ) 1 5.3 0 (.6 02 ) -B- 2X 5.50 (.2 1 7) 4.50 (.1 7 7) NO TE S: 1 DIM EN SION ING & TO LER AN CING P ER A N SI Y14.5M , 1982. 2 CON TR OLLIN G D IM EN SIO N : IN CH . 3 CON F OR M S TO JED E C OU TLIN E TO-247-A C . 2 .40 (.0 94 ) 2 .00 (.0 79 ) 2X 5.45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0.2 5 (.01 0) M 3 .40 (.1 33 ) 3 .00 (.1 18 ) C AS 0 .8 0 (.0 31 ) 3X 0 .4 0 (.0 16 ) 2.60 (.10 2) 2.20 (.08 7) TO-247AC Part Marking Information E X A M P L E : T H IS IS A N IR F P E 30 W IT H A S S E M B L Y LOT COD E 3A1Q A I N T E R N A T IO N A L R E C T IF IE R LOGO P AR T N UM B E R IR F P E 3 0 3A1Q 9302 DATE CO DE (Y Y W W ) YY = YE A R W W W EEK ASSEMBLY LOT COD E Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02 8 www.irf.com |
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