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| DC - 26.5 GHz SPDT GaAs MMIC Switch Technical Data HMMC-2027 Features * Outputs Terminated in 50 When Off * Frequency Range: DC- 26.5 GHz * Insertion Loss: 2.5dB @ 26.5 GHz * Isolation: >70 dB @ 45 MHz 30 dB @ 26.5 GHz * Return Loss: 15 dB (Both Input and Selected Output) 12 dB Unselected Output * Switching Speed: <1 ns (10%-90% RF) * P-1dB: 18 dBm @ 10 MHz 27 dBm @ 2 GHz * Harmonics (DC Coupled): <-45 dBc @ 10 MHz and 5 dBm <-65 dBc @ 2 GHz and 5 dBm SEL1 SEL2 RF OUT2 RF OUT1 RF IN CHIP ID Description The HMMC-2027 is a GaAs monolithic microwave integrated circuit (MMIC) designed for low insertion loss and high isolation from DC to 26.5 GHz. It is intended for use as a generalpurpose, single-pole, doublethrow (SPDT), absorptive switch. Two series and two shunt MESFETs per throw provide 3 dB maximum insertion loss and 30 dB minimum isolation at 26.5 GHz. HMMC-2027 chips use through-substrate vias to provide ground connections to the chip backside and minimize the number of wire bonds required. 5965-5450E Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 900 x 960 m (35.4 x 37.8 mils) 10 m ( 0.4 mils) 127 15 m (5.0 0.6 mils) 80 x 80 m (3.2 x 3.2 mils), or larger Absolute Maximum Ratings[1] Symbol Vsel Pin Top TSTG Tmax Punsel[2] Parameters/Conditions Select Voltages 1 and 2 RF Input Power Operating Temperature Storage Temperature Maximum Assembly Temp. Power into Unselected Output Units V dBm C C C dBm -55 -65 Min. -10.5 Max. + 3 25 +125 +165 +200 15 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25C except for Top, TSTG, and Tmax. 2. Operation in excess of these @ Top-max may result in permanent damage. 7-32 DC Specifications/Physical Properties, TA = 25C Symbol Il Vp BVgss Parameters and Test Conditions Leakage Current @ -10 V Pinch-Off Voltage (VSEL2 = Vp, VRFout2 = +2 V, IRFout2 = 2 mA, VSEL1 = -10 V, VRFout1 = open circuit, VRFin = GND Breakdown Voltage (Test FET w/VD = VS = GND, IG = -50 A) Units A V -6.75 Min. Typ. Max. 200 -3.00 V -13.0 RF Specifications, TA = 25C, ZO = 50 , Vsel-high = 0 V, Vsel-low = -10 V Symbol BW IL ISO ISO RL in RL out-ON RL out-OFF P1 dB ts Parameters and Test Conditions Guaranteed Operating Bandwidth Insertion Loss, RFin to Selected RFout,f = 26.5 GHz, ON throw Isolation, RFin to Unselected RFout,f = 26.5 GHz, OFF throw Isolation, RFin to Unselected RFout, f = 18 GHz, OFF throw Input Return Loss Output Return Loss, ON throw Output Return Loss, OFF throw Input Power where IL increases by 1 dB Switching Speed, 10% - 90% RF Envelope fin = 2 GHz fin = 2 GHz Units GHz dB dB dB dB dB dB dBm ns 27 40 12 13 9 Min. DC 2.5 30 43 15 16 12 27 1 Typ. Max. 26.5 3.0 7-33 Applications The HMMC-2027 can be used in instrumentation, communications, radar, ECM, EW, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, high-speed switching, replacement of mechanical switches, and so on. Assembly Techniques Die attach should be done with conductive epoxy. Gold thermosonic bonding is recommended for all bonds. The top and bottom metallization is gold. For more detailed information see HP application note #999, "GaAs MMIC Assembly and Handling Guidelines." GaAs MMICs are ESD sensitive. Proper precautions should be used when handling these devices. S-Parameters[1], TA = 25C, ZO = 50 , Vsel high = 0 V, Vsel low = -10 V Freq. GHz dB 0.5 0.5 1.5 4.0 6.5 9.0 11.5 14.0 16.5 19.0 21.5 24.0 26.5 S11 Mag. Ang. dB -1.08 -1.33 -1.35 -1.41 -1.47 -1.56 -1.62 -1.74 -1.88 -1.99 -2.10 -2.10 -2.39 S21 (Insertion Loss) S31 (Isolation) S22 (ON Throw) S33 (OFF Throw) Mag. Ang. 0.88 0.86 0.86 0.85 0.84 0.84 0.83 0.82 0.81 0.80 0.79 0.78 0.76 -49.06 -8.52 -14.62 -24.53 -39.56 -55.13 -71.03 -29.63 258.60 242.13 227.84 209.72 191.82 dB -67.74 -71.40 -61.02 -51.67 -49.50 -46.87 -44.71 -42.30 -41.74 -37.07 -40.39 -34.46 -31.38 dB -28.40 -18.44 -18.46 -18.75 -19.10 -19.72 -20.91 -22.41 -24.17 -27.09 -28.85 -24.31 -19.43 Mag. Ang. 0.03 0.12 0.12 0.12 0.11 0.10 0.09 0.08 0.06 0.04 0.04 0.06 0.11 -47.94 -9.89 -19.75 -38.78 -63.22 15.79 243.63 217.48 179.74 133.20 68.10 6.26 -33.31 dB -32.26 -16.79 -16.47 -15.36 -14.55 -14.28 -13.84 -13.53 -12.95 -12.76 -13.12 -12.11 -12.03 Mag. 0.024 0.14 0.15 0.17 0.19 0.19 0.20 0.21 0.23 0.23 0.22 0.25 0.25 Ang. 47.18 173.87 171.75 168.03 152.55 136.68 121.81 106.44 92.94 74.01 68.84 54.32 38.26 -26.41 0.048 -57.11 -18.28 0.12 -7.04 -18.53 0.12 -13.70 -18.92 0.11 -27.64 -19.43 0.11 -45.02 -20.57 0.09 -64.07 -21.85 0.08 -2.59 -23.10 0.07 258.44 -24.05 0.06 235.82 -24.59 0.06 224.56 -25.42 0.05 206.39 -24.66 0.06 209.77 -21.90 0.08 223.86 Note: 1. Three-port-wafer-probed data: Port 1 = RF Input, Port 2 = Selected RF Output (i.e., ON throw), and Port 3 = Unselected RF Output (i.e., OFF throw). 7-34 RF IN RF OUT2 RF OUT1 SEL2 SEL1 Figure 1. HMMC-2027 Schematic. Recommended Operating Conditions, TA = 25C Select Line SEL1 -10 V 0V SEL2 0V -10 V RF Path RF IN to RF OUT1 Isolated Low Loss RF IN to RF OUT2 Low Loss Isolated 7-35 HMMC-2027 Typical Performance 0 0 INPUT RETURN LOSS (dB) 0 INSERTION LOSS (dB) -1 S21 ISOLATION (dB) -20 S31 -8 -2 -40 -16 S11 -24 -3 -60 -4 -80 -32 -5 0.045 FREQUENCY (GHz) 26.5 -100 0.045 FREQUENCY (GHz) 26.5 -40 0.045 FREQUENCY (GHz) 26.5 Figure 2. Insertion Loss[1] vs. Frequency. Figure 3. Input-to-Output Isolation[1] vs. Frequency. Figure 4. Input Return Loss[1] vs. Frequency. 0 OUTPUT RETURN LOSS (dB) GAIN COMPRESSION (dB) 0 3 GHz 1 GHz HARMONICS (dBc) -50 Pin = 5 dBm -60 Second -70 -6 S33 -1 -12 -2 300 MHz 100 MHz -18 -3 -24 S22 -4 50 MHz 19 21 23 25 27 -80 Third -90 0 -30 0.045 FREQUENCY (GHz) 26.5 -5 17 1 2 3 4 5 6 7 POWER INPUT (dBm) FUNDAMENTAL FREQUENCY (GHz) Figure 5. Output Return Loss[1] vs. Frequency. Figure 6. Gain Compression[2] vs. Power Input. Figure 7. Harmonics vs. Fundamental Frequency[2,3]. Notes: 1. Data obtained from wafer-probed measurements. 2. All compression and harmonic data measured on individual device mounted in an HP83040 Series Modular Microcircuit Package @ Tcase = 25C. 3. Harmonic data points below -80 dBc are at or near the noise floor of the measurement system. 7-36 70 375 525 830 900 960 SEL1 SEL2 740 RF OUT2 RF OUT1 740 RF IN CHIP ID 70 0 0 450 Figure 8. HMMC-2027 Bonding Pad Locations. (Dimensions in micrometers) Note: All compression data measured in an individual device mounted in an HP83040 Series Modular Microcircuit Package @ Tcase = 25C. This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact your local HP sales representative. 7-37 |
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