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FMM5057X
C-Band Power Amplifier MMIC
FEATURES *High Output Power; P1dB = 34 dBm (Typ.) *High Linear Gain; GL = 27 dB(Typ.) *Frequency Band ; 7.1 - 8.5 GHz *High Linearity ; OIP3 = 42.5 dBm(typ.) *Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5057X is a power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 7.1 to 8.5GHz frequency range. This product is well suited for point-to-point radio applications. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Strage Temperature
Symbol VDD VGG Pin Tstg
Rating 12 -3 14 -55 to +125
Unit V V dBm
RECOMMENDED OPERATING CONDITIONS Item Symbol Drain-Source Voltage VDD Input Power Pin Drain Current without RF IDD(DC) Operating Backside Temperature Top This Product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25) Item Symbol
Condition 10 12 1200 -40 to +85
Unit V dBm mA
Test Conditions
Frequency Range f VDD=10.0V Output Power at 1dB G.C.P. P1dB IDD(DC)=1200mA typ. Power Gain at 1dB G.C.P. G1dB Zs=Zl=50ohm Gain Flatness G Input Return Loss RLin Output Return Loss RLout Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
Limits Unit Min. Typ. Max. 7.1 8.5 GHz 32.0 34.0 dBm 23 26 dB +/- 1.2 +/-2.0 dB 7.0 10 dB 10 dB G.C.P. : Gain Compression Point
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
Class 0
~ 199V
Edition 1.1 January 2006
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http://www.eudyna.com/
FMM5057X
C-Band Power Amplifier MMIC
Output Power vs. Frequency
VDD=10V, IDD(DC)=1200mA 38 36 Output Power [dBm] 34 32 30 28 26 24 22 6.3 6.7 7.1 7.5 7.9 8.3 8.7 9.1 Frequency [GHz]
Pin=0dBm P1dB Pin=8dBm Pin=12dBm
Output Power, Drain Current vs. Input Power
VDD=10V, IDD(DC)=1200mA 38 36 Output Power [dBm] 34 32 30 28 26 24 22 20 -4 -2 0 2 4 6 8 10 12 14 16 Input Power [dBm] Drain Current Pout 7.1GHz 7.7GHz 8.5GHz 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 Drain Current [mA]
Pin=4dBm
Power Added Efficiency vs. Frequency
VDD=10V, IDD(DC)=1200mA 32 Power Added Efficiency [%] 28 24 20 16 12 8 4 0 6.3 6.7 7.1
Pin=0dBm Pin=4dBm Pin=8dBm Pin=12dBm P1dB
7.5
7.9
8.3
8.7
9.1
Frequency [GHz]
2
FMM5057X
C-Band Power Amplifier MMIC
IMD vs. Frequency
VDD=10V, IDD(DC)=1200mA, Pout=20dBm S.C.L. -30 Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc] -20 -25 -30 -35 -40 -45 -50 -55 -60 16 18 20 22 24 26 28 2-tone Total Output Power [dBm] 30 32
IMD vs. Output Power
VDD=10V, IDD(DC)=1200mA
-35 -40 IM3 -45 -50 -55 -60 6.3 6.7 7.1 7.5 7.9 8.3 8.7 9.1 Frequency [GHz]
7.1GHz 7.8GHz 8.5GHz
IM3
3
FMM5057X
C-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power by Drain Voltage
IDD(DC)=1200mA, f=7.1GHz
36 34 32 Output Power [dBm] 30 28 26 24 22 20 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er [dBm] Drain Current Pout 6V 8V 10V 1600 1500 1400
Output Power, Drain Current vs. Input Power by Drain Voltage
IDD(DC)=1200mA, f=7.7GHz
36 34 32 Output Power [dBm]
Drain Current [mA]
1600 6V 8V 10V 1500 1400 1300 1200 1100 Drain Current 1000 900 800 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er [dBm ] Drain Current [mA] Pout
1300 1200 1100 1000 900 800
30 28 26 24 22 20
Output Power, Drain Current vs. Input Power by Drain Voltage
IDD(DC)=1200mA, f=8.5GHz
36 34 32 Output Power [dBm] 30 28 26 24 22 20 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er [dBm ] Drain Current Pout 6V 8V 10V 1600 1500 1400 Drain Current [mA] 1300 1200 1100 1000 900 800
Output Power, Gain vs. Drain Voltage
IDD(DC)=1200mA 36 34 32 P1dB [dBm] 30 28 26 24 22 5 6 7 8 9 10 11 Drain Voltage [V] P1dB 7.1GHz 7.7GHz 8.5GHz 36 34 32 30 28 26 24 22 G1dB [dB]
G1dB
4
FMM5057X
C-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power by Drain Current
VDD=10V, f=7.1GHz
36 34 32 Output Power [dBm] Pout 30 28 26 24 22 Drain Current 20 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er [dBm ] 700 1700 1500 1300 1100 900 800m A 1200m A 1600m A 2300 2100 1900
Output Power, Drain Current vs. Input Power by Drain Current
VDD=10V, f=7.7GHz
36 34 32 Output Power [dBm]
Drain Current [mA]
2300 800m A 1200m A 1600m A Pout 2100 1900 1700 1500 1300 1100 900 Drain Current 700 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er [dBm ] Drain Current [mA]
30 28 26 24 22 20
Output Power, Drain Current vs. Input Power by Drain Current
VDD=10V, f=8.5GHz
36 34 32 Output Power [dBm] 30 28 26 24 22 20 -4 -2 0 2 4 6 8 10 12 14 16 Input Pow er [dBm ] 800m A 1200m A 1600m A Pout 2300 2100 1900 Drain Current [mA] 1700 1500 1300 1100 900 700
Output Power, Gain vs. Drain Current
VDD=10V 36 34 32 P1dB [dBm] 30 28 26 24 22 400 7.1GHz 7.7GHz 8.5GHz P1dB 36 34 32 30 28 26 24 22 1800 G1dB [dB]
G1dB
Drain Current
600
800
1000
1200
1400
1600
Drain Current [mA]
5
FMM5057X
C-Band Power Amplifier MMIC
IMD vs. Output Power by Drain Voltage
IDD(DC)=1200mA, f=7.1GHz -10
IMD vs. Output Power by Drain Voltage
IDD(DC)=1200mA, f=7.7GHz -10 Intermodulation Distortion [dBc]
Intermodulation Distortion [dBc]
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16
6V 8V 10V
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16
6V 8V 10V
IM3
IM3
18
20
22
24
26
28
30
32
18
20
22
24
26
28
30
32
2-tone Total Pout [dBm]
2-tone Total Pout [dBm]
IMD vs. Output Power by Drain Voltage
IDD(DC)=1200mA, f=8.5GHz -10 Intermodulation Distortion [dBc] -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] IM3 6V 8V 10V
6
FMM5057X
C-Band Power Amplifier MMIC
IMD vs. Output Power by Drain Current
VDD=10V, f=7.1GHz -10 Intermodulation Distortion [dBc] Intermodulation Distortion [dBc] -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] IM3 800mA 1200mA 1600mA -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16 18 20 22 24 26 28 30 32 2-tone Total Pout [dBm] IM3 800mA 1200mA 1600mA
IMD vs. Output Power by Drain Current
VDD=10V, f=7.7GHz
IMD vs. Output Power by Drain Current
VDD=10V, f=8.5GHz -10
Intermodulation Distortion [dBc]
-15 -20 -25 -30 -35 -40 -45 -50 -55 -60 16
800mA 1200mA 1600mA
IM3
18
20
22
24
26
28
30
32
2-tone Total Pout [dBm]
7
FMM5057X
C-Band Power Amplifier MMIC
S-PARAMETER
@VDD=10V, IDD=1200mA 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 Frequency [GHz]
@VDD=10V, IDD=1200mA 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 6
S11 S22 S21
Sxx [dB]
18
20
S11
S22
S21
Sxx [dB]
6.5
7
7.5
8
8.5
9
9.5
Frequency [GHz]
8
FMM5057X
C-Band Power Amplifier MMIC
S-PARAMETER
@VDD=10V, IDD=1200mA Freq. S11 Mag. S11 Ang. S21 Mag. S21 Ang. S12 Mag. S12 Ang. S22 Mag. S22 Ang. 1.0 0.96 -48.7 0.09 68.8 0.00 28.3 0.97 -93.8 2.0 0.89 -90.7 0.01 103.2 0.00 60.4 0.93 -144.5 3.0 0.81 -125.8 0.00 -5.5 0.00 -131.6 0.93 -169.9 4.0 0.72 -159.6 0.39 86.7 0.00 -13.7 0.94 161.7 5.0 0.52 171.1 10.59 139.2 0.00 147.8 0.88 128.6 6.0 0.28 143.0 19.53 -98.2 0.00 28.6 0.56 69.6 6.5 0.14 147.0 23.03 150.4 0.00 -146.7 0.18 11.8 6.6 0.13 151.8 23.37 128.2 0.00 116.4 0.12 -12.6 6.7 0.11 159.9 23.50 106.3 0.00 97.7 0.08 -56.3 6.8 0.10 171.2 23.52 84.6 0.00 16.9 0.09 -108.2 6.9 0.10 -177.2 23.42 63.1 0.00 -132.3 0.12 -137.4 7.0 0.11 -167.9 23.21 42.0 0.00 -110.9 0.15 -153.7 7.1 0.12 -160.1 22.96 21.1 0.00 177.5 0.18 -164.8 7.2 0.13 -155.2 22.67 0.6 0.00 32.5 0.20 -173.3 7.3 0.15 -152.8 22.39 -19.8 0.00 -113.4 0.22 -179.1 7.4 0.17 -152.6 22.14 -40.1 0.00 136.3 0.23 175.6 7.5 0.18 -153.2 21.89 -60.1 0.00 -27.5 0.23 171.7 7.6 0.20 -155.2 21.72 -80.1 0.00 -159.1 0.23 169.1 7.7 0.21 -157.7 21.57 -100.1 0.00 -139.9 0.23 167.4 7.8 0.22 -161.4 21.57 -120.1 0.00 129.3 0.23 165.7 7.9 0.23 -166.3 21.66 -140.3 0.00 86.7 0.23 164.6 8.0 0.23 -172.1 21.82 -160.8 0.00 -122.6 0.23 163.9 8.1 0.24 -178.1 22.14 178.3 0.00 68.0 0.22 162.6 8.2 0.24 174.6 22.56 156.8 0.00 -9.7 0.22 160.8 8.3 0.23 166.0 23.14 134.5 0.00 70.0 0.21 159.1 8.4 0.23 155.5 23.78 111.2 0.00 103.6 0.20 157.3 8.5 0.22 142.2 24.41 86.4 0.00 61.9 0.18 155.4 8.6 0.21 126.4 24.94 60.0 0.00 -112.2 0.16 154.4 8.7 0.20 105.6 25.02 31.7 0.00 -156.2 0.12 158.3 8.8 0.21 81.3 24.33 1.5 0.00 76.2 0.08 178.1 8.9 0.23 56.2 22.63 -30.0 0.00 -132.5 0.09 -142.2 9.0 0.27 31.7 19.90 -61.9 0.00 130.0 0.15 -125.3 10.0 0.76 -89.7 1.35 58.6 0.00 -146.5 0.54 -160.3 11.0 0.88 -131.4 0.09 -86.9 0.00 151.1 0.71 176.7 12.0 0.92 -154.6 0.01 159.7 0.00 -171.4 0.81 157.1 13.0 0.94 -171.2 0.00 108.8 0.00 76.6 0.87 139.4 14.0 0.95 175.3 0.00 153.7 0.00 42.9 0.90 122.8 15.0 0.96 163.5 0.00 79.2 0.00 156.2 0.92 105.8 16.0 0.97 152.8 0.00 -5.1 0.00 85.6 0.92 87.6 17.0 0.98 142.7 0.00 2.9 0.00 -61.6 0.90 67.2 18.0 0.99 132.9 0.00 26.7 0.00 -34.0 0.87 43.1 19.0 0.99 123.6 0.00 14.3 0.00 -133.3 0.82 14.0 20.0 1.00 114.0 0.00 42.1 0.00 148.1 0.75 -22.7
9
FMM5057X
C-Band Power Amplifier MMIC
Tch vs. Drain Voltage (Reference)
80 70 60 Tch [ ] 50 40 30 20 10 0 5 6 7 8 VDD [V] 9 10 11
IDD(DC)=1200mA
MTTF vs. Tch
270 250 1.0E+12 1.0E+11 1.0E+10 1.0E+09 MTTF (hours) 1.0E+08 1.0E+07 1.0E+06 1.0E+05 1.0E+04 1.0E+03 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1000/Tch (1/K) 145 125 Tch ()
10
FMM5057X
C-Band Power Amplifier MMIC
Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG
0 3230 3105 3075 737 1204
VDD3
2000
VDD5
3545 4130 3230 3105 3075
RF-IN 1618
1618 RF-OUT
128 0 0 737 1204 2000 3545 4130
128 0
VDD1 VDD2
VDD4
VDD6
Chip Size : 413030um x 323030um Chip Thickness : 7020um Bonding Pad Size : RF-Pad : 120um x 240um VDD Pad : 240um x 120um VGG Pad : 120um x 120um
11
FMM5057X
C-Band Power Amplifier MMIC
Recommended Assembly Diagrams
VGG 0.15uF
VDD3 0.15uF
220pF
220pF
220pF
220pF 0.15uF
220pF
220pF
220pF 0.15uF
VDD1
VDD2
Note : * High isolation between VDD1 and VDD2 is needed. * "Copper" is the recommended material for the package or carrier.
12
FMM5057X
C-Band Power Amplifier MMIC
DIE ATTACH 1) The die-attach station must have accurate temperature control and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature : 300 to 310 deg.C Time : less than 15 seconds AuSn Preform Volume : per next Figure
2500 Volume of Au-Sn Perform (10 -3/mm 3)
2000
FMM5057X
1500
1000
500
0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2)
WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N 0.0196 N Stage Temperature : 215 deg.C 5 deg.C Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond
13
FMM5057X
C-Band Power Amplifier MMIC
For further information please contact :
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-8738-1695 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2006 Eudyna Devices Inc.
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