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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003
TRANSISTORNPN (c)
TO 126
FEATURES Power dissipation PCM : 1.25 W Tamb=25ae(c) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(c) 1 DC current gain HFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) VBE fT tf ts
1.BASE 2.COLLECTOR 3.EMITTER
123
unless
Test
otherwise
specified(c)
TYP MAX UNIT V V V 1000 500 1000 8 5 1 1.2 3 5 0.5 2.5 V V V MHz s s 40 A A A
conditions
MIN 700 400 9
Ic= 1000|I AIE=0 Ic= 10 mAIB=0
IE= 1000|I AIC=0 VCB= 700 VCE= 400 VEB= 9 VIE=0 VIB=0 VIC=0
VCE= 2 V, IC= 0.5 A VCE= 10 V, IC= 0.5 mA IC=1000m A,IB= 250 m A IC=1000mA, IB= 250m A IE= 2000 mA VCE=10V,Ic=100mA f =1MHz IC=1A, I 1=-IB2=0.2A B
VCC=100V
CLASSIFICATION OF HFE(1)
Rank Range 8-15 15-20 20-25 25-30 30-35 35-40
TO-126 PACKAGE OUTLINE DIMENSIONS
D
A1
A
E
b1 L
e e1
L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126
P
|O
Symbol A A1 b b1 c D E e e1 L L1 P |O
Dimensions In Inches Max 0.114 0.059 0.034 0.054 0.024 0.307 0.433

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