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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-1023
Features
* High Output Power: +27 dBm Typical P1dB at 1.0 GHz * Low Distortion: 37 dBm Typical IP3 at 1.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * Hermetic, Metal/Beryllia Stripline Package * Impedance Matched to 25 for Push-Pull Configurations
This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1023 can also be used as a single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
230 mil BeO Flange Package
Description
The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics.
Typical Push-Pull Biasing Configuration
R bias VCC > 20 V RFC C block 1 50 1
MSA
4 C block
MSA
IN
3 2 4 3 C block RFC VCC > 20 V R bias Vd = 15 V 50 OUT
C block
2
5965-9554E
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MSA-1023 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 425 mA 7.0 W +25 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 15C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 66.7 mW/C for TC > 95C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions: Id = 325 mA, ZO = 25
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth[2] Input VSWR Output VSWR 25 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.0 GHz f = 0.1 to 2.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 to 2.0 GHz
Units
dB dB GHz
Min.
7.5
Typ.
8.5 0.6 2.5 2.0:1 2.8:1
Max.
9.5
dB dBm dBm psec V mV/C 13.5 25.0
7.0 27.0 37.0 250 15.0 -18.0 16.5
Notes: 1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz gain (G P).
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MSA-1023 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 325 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.001 0.005 0.010 0.025 0.050 0.100 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.500 3.000
.40 .51 .52 .52 .52 .53 .53 .51 .48 .45 .42 .38 .35 .34 .36 .39 .51 .60
-121 -167 -174 -178 179 176 172 164 157 151 146 144 145 149 152 153 148 133
15.3 8.5 7.5 7.2 7.1 7.0 7.0 7.0 7.0 7.0 7.0 6.9 6.8 6.6 6.3 5.9 4.6 3.0
5.85 2.67 2.36 2.28 2.26 2.25 2.25 2.24 2.24 2.23 2.23 2.22 2.20 2.15 2.07 1.97 1.69 1.41
149 156 166 172 173 170 163 146 130 113 95 78 61 44 19 11 -24 -57
-17.9 -15.9 -15.8 -15.8 -15.8 -15.8 -15.8 -15.8 -16.0 -16.1 -16.2 -16.4 -16.7 -17.0 -17.3 -17.7 -18.3 -17.9
.128 .160 .162 .162 .161 .161 .161 .161 .159 .157 .155 .151 .146 .141 .136 .130 .121 .127
22 6 3 1 -1 -3 -5 -11 -16 -21 -26 -31 -36 -41 -45 -49 -52 -57
.42 .45 .45 .45 .45 .45 .46 .46 .45 .44 .44 .44 .45 .46 .49 .62 .52 .70
-99 -161 -171 -177 -179 179 174 170 165 161 157 155 154 153 150 148 140 128
0.69 1.05 1.16 1.20 1.21 1.21 1.21 1.22 1.23 1.24 1.24 1.24 1.24 1.22 1.18 1.13 .91 .59
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
10 0.5 GHz 8 300
GAIN (dB)
400
IP3 (dBm)
TC = +100C TC = +25C TC = -50C
40
36
IP3
Id (mA)
6 2.0 GHz 4 1.0 GHz 1.5 GHz
32 200 28 100
P1 dB (dBm)
P1 dB
2
24
0 16
0 18 20 22 24 26 28 30 32 0 2 4 6 Vd (V) 8 10 POWER OUT (dBm)
20 150
200
250
300
350
400
I d (mA)
Figure 1. Typical Gain vs. Power Out, ZO = 25, Id = 325 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept Point vs. Current, ZO=25, f = 1.0 GHz.
6
32
10 ZO = 25 8
30 28
P1 dB (dBm) GAIN (dB)
5 4
0.5 GHz 26 1.0 GHz 24 22 20 -50 1.0 GHz, 4.0 GHz 2.0 GHz +25 +100
6
VSWR
ZO = 50
Input ZO = 50 3 Output ZO = 50 Input ZO = 25 Output ZO = 25 0.2 0.3 0.5 1.0 2.0 3.0
4 Id = 400 mA Id = 325 mA Id = 150 mA 0.2 0.3 0.5 1.0 2.0 4.0
2 2 1
0 0.1
0 0.1
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression vs. Temperature, ZO = 25 , Id = 325 mA.
Figure 5. Gain vs. Frequency, Id = 325 mA.
Figure 6. VSWR vs. Frequency, Id = 325 mA.
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230 mil BeO Flange Package
.725 .030 18.42 .76 4 .800 RF 20.32 INPUT .562 14.27 1 .120 3.05 .130 3.30 2 .130 .010 3.30 .25 .004 .002 .10 .05 .230 5.84 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .060 1.52 GROUND .050 1.27
RF OUTPUT AND BIAS 3
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