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| Order this document by MRFIC1856/D Advance Information MRFIC1856 Dual-Band/Dual-Mode pHEMT GaAs IPA The MRFIC1856 is designed for dual-band subscriber equipment applications at 3.6 V in the cellular (800 MHz) and PCS (1900 MHz) bands. The device incorporates two pHEMT GaAs amplifier chains in one package, allowing the most flexibility and highest performance while reducing board space. Target applications include dual-band/dual-mode handsets for TDMA/AMPS and PCS TDMA cellular phones. DUAL-BAND/DUAL-MODE GaAs INTEGRATED POWER AMPLIFIER SEMICONDUCTOR TECHNICAL DATA * * * * * Designed to Operate in Frequency Ranges of: 824 to 849 MHz TDMA/AMPS 1850 to 1910 MHz PCS TDMA 3.6 V Operation 30 dBm Output Power PCS TDMA 31 dBm Output Power TDMA Cellular 31 dBm Output Power AMPS 20 1 (Scale 2:1) PLASTIC PACKAGE CASE 948M (TSSOP-20EP, Tape & Reel Only) PIN CONNECTIONS VG3A VD1A VSS 1 2 3 4 5 6 7 8 9 10 (Top View) 20 VD2A 19 RFoA/VD3A 18 RFoA/VD3A 17 RFoA/VD3A 16 Gnd 15 RFoB/VD3B 14 RFoB/VD3B 13 RFoB/VD3B 12 RFoB/VD3B 11 VD2B Simplified Block Diagram Vd1A Vd2A Vg3A RFinA VG1A VG1B RFinB Gnd VSS VG1A RFinA Bias VD1B VG3B RFoA/VD3A RFinB VG1B RFoB/VD3B ORDERING INFORMATION VD1B VD2B VG3B Device This device contains 8 active transistors. This document contains information on a new product. Specifications and information herein are subject to change without notice. Operating Temp Range Package TSSOP-20EP Rev 1 MRFIC1856R2 TC = -35 to 85C (c) Motorola, Inc. 2000 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA 1 MRFIC1856 MAXIMUM RATINGS Rating Supply Voltage RF Input Power Gate Voltage Storage Temperature Range Operating Case Temperature Thermal Resistance, Junction to Case Symbol VD Pin Vg Tstg TC RqJC Value 4.8 15 -6 to -0.3 -65 to 150 -35 to 85 15 Unit Vdc dBm Vdc C C C/W NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 100 V and Machine Model (MM) <50 V. Additional ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristics Frequency Range - TDMA/AMPS Frequency Range - PCS TDMA Supply Voltage Range Negative Supply Voltage Symbol fRF fRF VD1,2,3A, VD1,2,3B VG Limit 824 to 849 1850 to 1910 3.0 to 4.8 -4.5 to -2.5 Unit MHz MHz Vdc Vdc ELECTRICAL CHARACTERISTICS (VD1,2,3A = 3.6 V, TA = 25C, unless otherwise noted) Characteristic TDMA CELLULAR PERFORMANCE (Pout = 31 dBm, f = 840 MHz) Quiescent Supply Current Negative Supply Current Efficiency Gain Adj Channel Power (30 kHz) Alt Channel Power (60 kHz) Rx Band Noise (30 kHz BW) Harmonic Output Power 2fo 3fo Spurious Output, 10:1 VSWR, all angles on output AMPS PERFORMANCE (Pout = 31 dBm, f = 840 MHz) Quiescent Supply Current Negative Supply Current Efficiency (Pout = 31 dBm) Gain Harmonic Output Power 2fo 3fo Rx Band Noise (30 kHz BW) Spurious Output, 10:1 VSWR, all angles on output PCS TDMA PERFORMANCE (Pout = 30 dBm, f = 1.88 GHz) Quiescent Supply Current Negative Supply Current Efficiency Gain - - - - - - 30 28 - 35 - 300 3.0 - - mA mA % IDQ ISS PAE GP - - - - - - - - - -92 - -34 -40 - -60 dBm dBc - - - 30 - - 48 - 300 3.0 - - dBc mA mA % IDQ ISS PAE GP ACP ALT - - - - - - - - -34 -40 -60 dBc - - 40 29 - - - - - 45 - - - -92 300 3.0 - - -29 -48 - dBc dBc dBm dBc mA mA % Symbol Min Typ Max Unit 2 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRFIC1856 ELECTRICAL CHARACTERISTICS (continued) (VD1,2,3A = 3.6 V, TA = 25C, unless otherwise noted) Characteristic PCS TDMA PERFORMANCE (continued) (Pout = 30 dBm, f = 1.88 GHz) Adj Channel Power (30 kHz) Alt Channel Power (60 kHz) Rx Band Noise (30 kHz BW) Harmonic Output Power 2fo 3fo Spurious Output, 10:1 VSWR, all angles on output - - - - - - - - - - - -40 -40 -60 dBc - - - - - -94 -29 -48 - dBc dBc dBm dBc Symbol Min Typ Max Unit Figure 1. 3.6 V Applications Circuit VD2A VD1A C3 C2 C29 T2 2 VSS C1 RF InA VG12 C13 T6 RF InB C14 C15 T7 C16 L2 3 4 5 6 7 8 9 10 R2 VG3B C21 C24 C22 VD1B VD3B VD2B Bias 19 18 17 16 15 14 13 12 11 L3 T8 C17 T9 T10 C25 C27 RF OutB T4 T5 C10 T11 C30 C12 RF OutA C11 VG3A C7 R1 C6 C5 C4 1 20 T3 L1 C9 VD3A C18 C1,C2,C5,C12,C17, 100 pF C28 3.9 nF C3,C4,C6,C13,C21 1000 pF C7,C18 10 F C9,C22,C24 20 F C10 12 pF C11 5.1 pF C14 22 pF C15,C30 1.3 pF C16 C25 C27 C29 L1,L2,L3 R1 R2 6.2 pF 4.7 pF 10 pF 3.9 pF 15 nH 50 100 NOTE: C29 added for 2nd harm trap. T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 50 , Microstrip, L = 128 mils 50 , Microstrip, L = 50 mils 50 , Microstrip, L = 60 mils 90 , Microstrip, L = 88 mils 90 , Microstrip, L = 600 mils 63 , Microstrip, L = 133 mils 50 , Microstrip, L = 133 mils 50 , Microstrip, L = 10 mils 50 , Microstrip, L = 330 mils 50 , Microstrip, L = 145 mils MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA 3 MRFIC1856 Figure 2. 4.8 V Applications Circuit VD2A VD1A C3 C2 C29 T2 2 VSS = -3.7 V C1 RF InA VG1/2 C13 T6 RF InB C14 C15 T7 C16 L2 3 4 5 6 7 8 9 10 R2 VG3B C21 C24 C22 VD1B VD3B VD2B Bias 19 18 17 16 15 14 13 12 11 L3 T8 C17 T9 T10 C25 C27 RF OutB T4 T5 C10 T11 C30 C12 RF OutA C11 VG3A C7 R1 C6 C4 T3 1 20 L1 C5 C9 VD3A C18 C1,C2,C5,C12,C17, 100 pF C28 3.9 nF C3,C4,C6,C13,C21 1000 pF C7,C18 10 F C9,C22,C24 20 F C10 12 pF C11 5.1 pF C14 22 pF C15,C30 1.3 pF C16 C25 C27 C29 L1,L2,L3 R1 R2 6.8 pF 4.3 pF 10 pF 3.9 pF 15 nH 50 100 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 50 , Microstrip, L = 128 mils 50 , Microstrip, L = 50 mils 50 , Microstrip, L = 60 mils 90 , Microstrip, L = 88 mils 90 , Microstrip, L = 600 mils 63 , Microstrip, L = 133 mils 50 , Microstrip, L = 133 mils 50 , Microstrip, L = 10 mils 50 , Microstrip, L = 330 mils 50 , Microstrip, L = 145 mils 4 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRFIC1856 TDMA PERFORMANCE Figure 3. Gain versus Frequency 33.5 33 32.5 GAIN (dB) 32 31.5 85C 31 30.5 30 820 VDD = 3.6 V 825 830 835 840 845 850 25C GAIN (dB) TA = -35C 36 34 VDD = 4.8 V 32 3.6 V 30 28 3.0 V 26 24 820 TA = 25C Figure 4. Gain versus Frequency 825 830 835 840 845 850 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. Output Power versus Input Power 35 Pout , OUTPUT POWER (dBm) 30 25 25C 20 85C 15 10 5.0 -20 f = 836 MHz VDD = 3.6 V TA = -35C Pout , OUTPUT POWER (dBm) 40 35 30 25 20 Figure 6. Output Power versus Input Power VDD = 4.8 V 3.6 V 3.0 V 15 10 f = 836 MHz TA = 25C -15 -10 -5.0 0 5.0 10 5.0 -20 -15 -10 -5.0 0 5.0 10 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) Figure 7. Adjacent Channel Power versus Output Power -15 -20 -25 -30 TA = -35C, 25C, & 85C -35 -40 5.0 f = 836 MHz VDD = 3.6 V ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) -15 -20 -25 -30 -35 -40 5.0 Figure 8. Adjacent Channel Power versus Output Power f = 836 MHz TA = 25C VDD = 3.0 V 3.6 V 4.8 V 10 15 20 25 30 35 40 10 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA 5 MRFIC1856 TDMA PERFORMANCE Figure 9. Alternate Channel Power versus Output Power -30 ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) -35 -40 -45 -50 -55 -60 -65 85C -70 10 15 20 25 30 35 40 -70 10 15 20 25 30 35 40 TA = 25C -35C f = 836 MHz VDD = 3.6 V -30 -35 -40 -45 -50 -55 -60 -65 VDD = 3.0 V 4.8 V f = 836 MHz TA = 25C 3.6 V Figure 10. Alternate Channel Power versus Output Power Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 11. Gain versus Frequency 32 31 30 25C 29 85C 28 VDD = 3.6 V 27 1850 1860 1870 1880 1890 1900 1910 24 1850 34 32 GAIN (dB) 30 Figure 12. Gain versus Frequency TA = -35C VDD = 4.8 V 3.6 V GAIN (dB) 28 3.0 V 26 TA = 25C 1860 1870 1880 1890 1900 1910 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 13. Output Power versus Input Power 35 Pout , OUTPUT POWER (dBm) 30 25 25C 20 85C 15 10 5.0 -20 f = 1880 MHz VDD = 3.6 V TA = -35C Pout , OUTPUT POWER (dBm) 40 35 30 25 20 15 10 10 5.0 -20 Figure 14. Output Power versus Input Power VDD = 4.8 V 3.6 V 3.0 V f = 1880 MHz TA = 25C -15 -10 -5.0 0 5.0 -15 -10 -5.0 0 5.0 10 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) 6 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRFIC1856 TDMA PERFORMANCE Figure 15. Adjacent Channel Power versus Output Power -15 -20 -25 -30 -35 -40 5.0 f = 1880 MHz VDD = 3.6 V TA = 25C & 85C ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) -15 -20 -25 4.8 V -30 -35 -40 5.0 3.6 V f = 1880 MHz TA = 25C Figure 16. Adjacent Channel Power versus Output Power VDD = 3.0 V -35C 10 15 20 25 30 35 10 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 17. Alternate Channel Power versus Output Power -30 ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) -35 -40 -45 -50 -55 -60 85C -65 -70 5.0 10 15 20 25 30 35 TA = -35C 25C f = 1880 MHz VDD = 3.6 V -30 -35 -40 -45 -50 -55 -60 -65 -70 5.0 Figure 18. Alternate Channel Power versus Output Power f = 1880 MHz TA = 25C 3.6 V VDD = 3.0 V 4.8 V 10 15 20 25 30 35 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA 7 MRFIC1856 OUTLINE DIMENSIONS PLASTIC PACKAGE CASE 948M-01 (TSSOP-20EP) ISSUE O NOTES: 1 DIMENSIONS ARE IN MILLIMETERS. 2 INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3 DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. 4 DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5 DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6 TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7 DIMENSIONS D AND E1 ARE TO BE DETERMINED AT DATUM PLANE H. MILLIMETERS MIN MAX --- 1.20 0.00 0.10 0.19 0.30 0.19 0.25 0.09 0.20 0.09 0.16 6.40 6.60 6.40 BSC 4.30 4.50 0.65 BSC 0.50 0.75 --- 4.80 --- 3.00 0.27 0.37 0_ 8_ 20X b REF 0.10 M 0.20 C B A CB S A S 2X E/2 20 11 E EXPOSED THERMAL PAD (BOTTOM SURFACE) PIN 1 IDENTIFICATION 1 10 P1 E1 0.20 C B A P D B A 0.10 C GAUGE PLANE A A1 e R DETAIL E H PARTING LINE c N 0.25 c1 c N L DETAIL E b b1 DIM A A1 b b1 c c1 D E E1 e L P P1 R q Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo, 106-8573 Japan. 81-3-3440-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Customer Focus Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors 8 CCE E CCCC EE CCCC ECC E SECTION N-N q MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS - RF AND IF DEVICE DATA MRFIC1856/D |
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