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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80
ID25
RDS(on) 0.95 W 0.80 W
800 V 11 A 800 V 13 A trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 11N80 13N80 11N80 13N80 11N80 13N80
Maximum Ratings 800 800 20 30 11 13 44 52 11 13 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density
91528F(7/97)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.0 4.5 100 TJ = 25C TJ = 125C 250 1 0.95 0.80 V V nA mA mA W W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25
11N80 13N80 Pulse test, t 300 ms, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
1-4
IXFH 11N80 IXFM 11N80
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 14 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 100 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External) 33 63 32 128 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 30 55 50 50 100 50 155 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXFH 13N80 IXFM 13N80
TO-247 AD (IXFH) Outline
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11N80 13N80 11N80 13N80 11 13 44 52 1.5 250 400 1 8.5 A A A A V ns ns mC A
J K L M N
1.5 2.49
TO-204 AA (IXFM) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90
Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFH 11N80 IXFM 11N80
Fig. 1 Output Characteristics
18 16 14
TJ = 25C
IXFH 13N80 IXFM 13N80
Fig. 2 Input Admittance
18 16
TJ = 25C VDS = 10V
VGS = 10V 8V
14
ID - Amperes
10 8 6 4 2 0 0 2 4 6 8 10 12
7V
ID - Amperes
12
12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 2 4 6 8 10 12 14 16 18 20 22 24 26
VGS = 10V TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 6.5A
RDS(on) - Ohms
VGS = 15V
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
18 16 14
13N80
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th) BVDSS
1.1
BV/VG(th) - Normalized
ID - Amperes
12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
11N80
1.0 0.9 0.8 0.7 0.6 0.5 -50
-25
0
25
50
75
100
125
150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFH 11N80 IXFM 11N80
Fig.7 Gate Charge Characteristic Curve
10
IXFH 13N80 IXFM 13N80
Fig.8 Forward Bias Safe Operating Area
10s
8
6 4 2 0 0 25 50 75 100 125 150
ID - Amperes
VDS = 400V ID = 13A IG = 10mA
Limited by RDS(on) 100s
10
1ms 10ms 100ms
VGE - Volts
1
0.1 1 10 100 1000
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500 4000
Ciss
Fig.10 Source Current vs. Source to Drain Voltage
18 16 14
Capacitance - pF
3500
f = 1 MHz VDS = 25V
2500 2000 1500 1000 500 0 0 5
ID - Amperes
3000
12 10 8 6 4 2
TJ = 125C TJ = 25C
Coss Crss
10
15
20
25
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4

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