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| a FEATURES High Off Isolation -75 dB at 100 MHz -3 dB Signal Bandwidth 300 MHz +1.8 V to +5.5 V Single Supply Low On-Resistance (15 ) Fast Switching Times tON Typically 9 ns tOFF Typically 3 ns Typical Power Consumption <0.01 W TTL/CMOS Compatible APPLICATIONS Audio and Video Switching RF Switching Networking Applications Battery Powered Systems Communication Systems Relay Replacement Sample-and-Hold Systems S CMOS, Low Voltage RF/Video, SPST Switch ADG751 FUNCTIONAL BLOCK DIAGRAM ADG751 D IN SWITCH SHOWN FOR A LOGIC "1" INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG751 is a low voltage SPST (single pole, single throw) switch. It is constructed in a T-switch configuration, which results in excellent Off Isolation while maintaining good frequency response in the ON condition. High off isolation and wide signal bandwidth make this part suitable for switching RF and video signals. Low power consumption and operating supply range of +1.8 V to +5.5 V make it ideal for battery powered, portable instruments. The ADG751 is designed on a submicron process that provides low power dissipation yet gives high switching speed and low on resistance. This part is a fully bidirectional switch and can handle signals up to and including the supply rails. The ADG751 is available in 6-lead SOT-23 and 8-lead SOIC packages. 1. High Off Isolation -75 dB at 100 MHz. 2. -3 dB Signal Bandwidth 300 MHz. 3. Low On-Resistance (15 ). 4. Low Power Consumption, typically <0.01 W. 5. Tiny 6-lead SOT-23 and 8-lead SOIC packages. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 1999 ADG751-SPECIFICATIONS (V Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, I S (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF Charge Injection Off Isolation -3 dB Bandwidth CS (OFF) CD (OFF) CD , CS (ON) POWER REQUIREMENTS IDD 1 DD = +5 V 10%, GND = 0 V, unless otherwise noted.) A Grade -40 C to +25 C +85 C 0 V to VDD 15 18 2 20 3 0.01 0.25 0.01 0.25 0.01 0.25 B Grade -40 C to +25 C +85 C 0 V to VDD 28 35 3 40 5 0.01 0.25 0.01 0.25 0.01 0.25 Units V typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max pC typ Test Conditions/Comments VS = 0 V to VDD, I DS = 10 mA; Test Circuit 1 VS = 0 V to 2.5 V, IDS = 10 mA VDD = 4.5 V VDD = +5.5 V VD = 4.5 V/1 V, VS = 1 V/4.5 V; Test Circuit 2 VD = 4.5 V/1 V, VS = 1 V/4.5 V; Test Circuit 2 VD = VS = 1 V, or 4.5 V; Test Circuit 3 3.0 3.0 3.0 2.4 0.8 3.0 3.0 3.0 2.4 0.8 0.001 0.5 2 9 13 3 5 1 -75 180 4 4 26 0.001 0.1 0.001 0.5 2 9 13 3 5 1 -65 300 4 4 15 0.001 0.1 VIN = VINL or V INH RL = 300 , CL = 35 pF; VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 3 V, Test Circuit 4 VS = 1 V, RS = 0 , CL = 1.0 nF; Test Circuit 5 dB typ RL = 50 , CL = 5 pF, f = 100 MHz; Test Circuit 6 MHz typ RL = 50 , CL = 5 pF, Test Circuit 7 pF typ pF typ pF typ A typ A max VDD = +5.5 V Digital Inputs = 0 V or +5.5 V 0.5 0.5 NOTES 1 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. 0 SPECIFICATIONS (V Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, I S (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tON tOFF Charge Injection Off Isolation -3 dB Bandwidth CS (OFF) CD (OFF) CD , CS (ON) POWER REQUIREMENTS IDD 1 ADG751 DD = +3 V 10%, GND = 0 V, unless otherwise noted.) A Grade -40 C to +25 C +85 C 0 V to VDD 35 90 50 0.01 0.25 0.01 0.25 0.01 0.25 B Grade -40 C to +25 C +85 C 0 V to VDD 60 Units V typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max pC typ Test Conditions/Comments VS = 0 V to VDD, I DS = -10 mA; Test Circuit 1 VDD = +3.3 V VD = 3 V/1 V, VS = 1 V/3 V; Test Circuit 2 VD = 1 V/3 V, VS = 3 V/1 V; Test Circuit 2 VD = VS = 1 V, or 3 V; Test Circuit 3 0.01 0.25 0.01 0.25 0.01 0.25 3.0 3.0 3.0 2.0 0.4 3.0 3.0 3.0 2.0 0.4 0.001 0.5 2 12 19 4 6 1 -75 180 4 4 26 0.001 0.1 0.001 0.5 2 12 19 4 6 1 -65 280 4 4 15 0.001 0.1 VIN = VINL or V INH RL = 300 , CL = 35 pF; VS = 2 V, Test Circuit 4 RL = 300 , CL = 35 pF; VS = 2 V, Test Circuit 4 VS = 1 V, RS = 0 , CL = 1.0 nF; Test Circuit 5 dB typ RL = 50 , CL = 5 pF, f = 100 MHz; Test Circuit 6 MHz typ RL = 50 , CL = 5 pF, Test Circuit 7 pF typ pF typ pF typ A typ A max VDD = +3.3 V Digital Inputs = 0 V or +3.3 V 0.5 0.5 NOTES 1 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 -3- ADG751 ABSOLUTE MAXIMUM RATINGS 1 (TA = +25C unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . . -0.3 V to V DD +0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (A, B Versions) . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature (TJ Max) . . . . . . . . . . . . . . . . . .+150C Power Dissipation . . . . . . . . . . . . . . . . . . . . (TJ Max-TA)/JA SOIC Package JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44C/W SOT-23 Package JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 229.6C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . 91.99C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. ORDERING GUIDE Model ADG751BRM ADG751BRT ADG751ARM ADG751ART Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C Brand* SDB SDB SDA SDA Package Descriptions SOIC SOT-23 SOIC SOT-23 Package Options RM-8 RT-6 RM-8 RT-6 *Brand on these packages is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG751 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE -4- REV. 0 ADG751 PIN CONFIGURATIONS 8-Lead SOIC (RM-8) TERMINOLOGY NC 1 S2 8 VDD 7D TOP VIEW GND 3 (Not to Scale) 6 NC IN 4 5 NC ADG751 VDD GND S D IN RON RFLAT(ON) NC = NO CONNECT 6-Lead SOT-23 (RT-6) S1 VDD 2 6D 5 GND TOP VIEW (Not to Scale) 4 IN NC 3 NC = NO CONNECT ADG751 IS (OFF) ID (OFF) ID, IS (ON) VD (VS) CS (OFF) CD (OFF) CD, CS (ON) tON tOFF Off Isolation Charge Injection Bandwidth On Response Insertion Loss VINL VINH IINL(IINH) IDD Most positive power supply potential. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Ohmic resistance between D and S. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source leakage current with the switch "OFF." Drain leakage current with the switch "OFF." Channel leakage current with the switch "ON." Analog voltage on terminals D and S. "OFF" switch source capacitance. "OFF" switch drain capacitance. "ON" switch capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. A measure of unwanted signal coupling through an "OFF" switch. A measure of the glitch impulse transferred from the digital input to the analog output during switching. The frequency at which the output is attenuated by -3 dBs. The frequency response of the "ON" switch. Loss due to the ON resistance of the switch. Maximum input voltage for Logic "0." Minimum input voltage for Logic "1." Input current of the digital input. Positive supply current. Table I. Truth Table ADG751 IN 0 1 Switch Condition ON OFF REV. 0 -5- ADG751-Typical Performance Characteristics 35 VDD = +2.7V 30 TA = +25 C 65 60 55 50 45 RON - RON - 20 40 35 15 VDD = +3.3V VDD = +4.5V 30 25 20 VDD = +5.5V 5 15 0 2 3 4 1 VD OR VS DRAIN SOURCE VOLTAGE - Volts 5 0 VDD = +4.5V VDD = +5.5V 2.0 3.0 4.0 1.0 VD OR VS DRAIN SOURCE VOLTAGE - Volts 5.0 5.4 VDD = +3.3V VDD = +2.7V TA = +25 C 25 10 Figure 1. On Resistance as a Function of VD (VS) Single Supplies (A Grade) Figure 4. On Resistance as a Function of VD (VS) Single Supplies (B Grade) 35 VDD = +3V 30 +85 C +125 C 65 VDD = +3V 60 +125 C 55 50 +85 C 25 45 RON - RON - 20 40 35 15 +25 C -40 C 10 20 5 15 0 1.0 1.5 2.0 2.5 0.5 VD OR VS DRAIN SOURCE VOLTAGE - Volts 3.0 0 1.2 0.4 0.8 1.6 2.0 2.4 VD OR VS DRAIN SOURCE VOLTAGE - Volts 2.8 3.0 +25 C 30 25 -40 C Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V (A Grade) Figure 5. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V (B Grade) 35 VDD = +5V 30 25 20 RON - 65 60 55 50 45 VDD = +5V +125 C +85 C RON - 40 35 30 25 +85 C +125 C 15 10 20 15 5 0 0 +25 C -40 C 10 5 +25 C -40 C 1 2 3 4 VD OR VS DRAIN SOURCE VOLTAGE - Volts 5 0 0 2.0 1.0 3.0 4.0 VD OR VS DRAIN SOURCE VOLTAGE - Volts 5.0 Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V (A Grade) Figure 6. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V (B Grade) -6- REV. 0 ADG751 0 10m VDD = +5V TA = +25 C TA = +25 C BANDWIDTH - dB B GRADE 1m -5 IDD - Amps 10 A GRADE 1 100n -10 1 10 FREQUENCY - MHz 100 300 10n 0.1 1k 10k 100k FREQUENCY - Hz 100M 10M Figure 7. On Response vs. Frequency (A Grade) Figure 10. Supply Current vs. Input Switching Frequency 0 6 TA = +25 C 4 TA = +25 C 2 BANDWIDTH - dB 0 VDD = +3V VDD = +5V QINJ - pC -5 -2 -4 -6 -8 -10 1 10 FREQUENCY - MHz 100 300 -10 0 1.0 3.0 2.0 SOURCE VOLTAGE - Volts 4.0 5.0 Figure 8. On Response vs. Frequency (B Grade) Figure 11. Charge Injection vs. Source/Drain Voltage 0 TA = +25 C -25 OFF ISOLATION - dB -50 A GRADE -75 B GRADE -100 -125 1 10 FREQUENCY - MHz 100 300 Figure 9. Off Isolation vs. Frequency for Both Grades REV. 0 -7- ADG751 GENERAL DESCRIPTION LAYOUT CONSIDERATIONS The ADG751 is an SPST switch constructed using switches in a T configuration to obtain high "OFF" isolation while maintaining good frequency response in the "ON" condition. Figure 12 shows the T-switch configuration. While the switch is in the OFF state, the shunt switch is closed and the two series switches are open. The closed shunt switch provides a signal path to ground for any of the unwanted signals that find their way through the off capacitances of the series' MOS devices. This results in improved isolation between the input and output than with an ordinary series switch. When the switch is in the ON condition, the shunt switch is open and the signal path is through the two series switches which are now closed. SERIES S D Where accurate high frequency operation is important, careful consideration should be given to the printed circuit board layout and to grounding. Wire wrap boards, prototype boards and sockets are not recommended because of their high parasitic inductance and capacitance. The part should be soldered directly to a printed circuit board. A ground plane should cover all unused areas of the component side of the board to provide a low impedance path to ground. Removing the ground planes from the area around the part reduces stray capacitance. Good decoupling is important in achieving optimum performance. VDD should be decoupled with a 0.1 F surface mount capacitor to ground mounted as close as possible to the device itself. IN SHUNT Figure 12. Basic T-Switch Configuration -8- REV. 0 ADG751 Test Circuits V1 S VS RON = V1/IDS D IDS VS IS (OFF) A S D ID (OFF) A VD NC = NO CONNECT NC S D ID (ON) A VD Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1 F VIN VDD 50% 50% S VS IN D RL 300 CL 35pF VOUT VS GND VOUT 90% 90% t OFF t ON Test Circuit 4. Switching Times VDD VDD RS VS IN VIN ON S D CL 1.0nF VOUT VOUT QINJ = CL GND VOUT VOUT OFF Test Circuit 5. Charge Injection VDD 0.1 F VDD 0.1 F VDD NETWORK ANALYZER 50 VS 50 NETWORK ANALYZER S IN D RL 50 VOUT VDD NETWORK ANALYZER 50 VS NETWORK ANALYZER S IN D RL 50 VOUT VIN GND OFF ISOLATION = 20 LOG VOUT VS VIN GND INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Test Circuit 6. Off Isolation Test Circuit 7. Bandwidth REV. 0 -9- ADG751 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead SOIC (RM-8) C3569-8-4/99 0.120 (3.05) 0.112 (2.84) 0.043 (1.09) 0.037 (0.94) 0.011 (0.28) 0.003 (0.08) 33 27 0.028 (0.71) 0.016 (0.41) 10 0.009 (0.23) 0 0.003 (0.08) 0.022 (0.55) 0.014 (0.35) 0.122 (3.10) 0.114 (2.90) 8 5 0.122 (3.10) 0.114 (2.90) 1 4 0.199 (5.05) 0.187 (4.75) PIN 1 0.0256 (0.65) BSC 0.120 (3.05) 0.112 (2.84) 0.006 (0.15) 0.002 (0.05) 0.018 (0.46) SEATING 0.008 (0.20) PLANE 6-Lead SOT-23 (RT-6) 0.122 (3.10) 0.106 (2.70) 0.071 (1.80) 0.059 (1.50) PIN 1 6 1 5 2 4 3 0.118 (3.00) 0.098 (2.50) 0.037 (0.95) BSC 0.075 (1.90) BSC 0.051 (1.30) 0.035 (0.90) 0.006 (0.15) 0.000 (0.00) 0.057 (1.45) 0.035 (0.90) 0.020 (0.50) SEATING 0.010 (0.25) PLANE -10- REV. 0 PRINTED IN U.S.A. |
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