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APM4230K
N-Channel Enhancement Mode MOSFET
Features
* * * * * *
25V/13.5A, RDS(ON)=6m(typ.) @ VGS=10V RDS(ON)=7.5m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged SOP-8 Package Lead Free Available (RoHS Compliant)
Pin Description
D D D D
S S S G
Top View of SOP - 8
( 5,6,7,8 ) D D DD
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
SSS (1, 2, 3) (4) G
N-Channel MOSFET
Ordering and Marking Information
APM 4230 Lead Free Code Handling Code Tem p. Range Package Code Package Code K : SO P-8 O perating Junction Tem p. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice XXXXX - Date Code
APM 4230 K :
APM 4230 XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw
APM4230K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA*
Note: *Surface Mounted on 1in pad area, t 10sec.
2
(TA = 25C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C VGS=10V
Rating 25 20 13.5 55 3 150 -55 to 150 2 0.8 62.5
Unit V A A C W C/W
Electrical Characteristics
Symbol Parameter
(TA = 25C unless otherwise noted)
APM4230K Min. Typ. Max. 45 25 1 30 1.3 1.8 6 7.5 9.5 0.7 29 VDS=10V, VGS=4.5V, IDS=16A 3.6 12 2.5 100 7.5 10 m 13 1.3 40 nC V
Test Condition
Unit
Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current
ID=20A, VDD=15V VGS=0V, IDS=250A VDS=20V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=13.5A VGS=4.5V, IDS=10A VGS=4.5V, IDS=10A, TJ=125C
mJ V A V nA
RDS(ON)
a
Drain-Source On-state Resistance
VSD
a
Diode Forward Voltage
b
ISD=1A, VGS=0V
Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge
Gate-Source Charge
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25C unless otherwise noted)
APM4230K Min. Typ. 2.3 3300 1180 790 15 28 24 170 75 ns 13 122 53 pF Max.
Test Condition
Unit
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf
Notes:
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Typical Characteristics
Power Dissipation
2.5 15
Drain Current
2.0
12
1.5
ID - Drain Current (A)
Ptot - Power (W)
9
1.0
6
0.5
3
o o
0.0
TA=25 C 0 20 40 60 80 100 120 140 160
0
TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area
Normalized Transient Thermal Resistacne
100 2 1
Thermal Transient Impedance
it
ID - Drain Current (A)
Rd
10
on
)L
300s 1ms
s(
im
Duty = 0.5 0.2
10ms
0.1
0.05 0.02 0.01
0.1
1
100ms 1s
0.01
Single Pulse
0.1
DC
T =25 C 0.01 A 0.01 0.1
o
1
10
100
1E-3 1E-4
Mounted on 1in pad o RJA : 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Typical Characteristics (Cont.)
Output Characteristics
60 VGS= 4,5,6,7,8,9,10V 3V 14 12
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
50
ID - Drain Current (A)
10 8 6 4 2 0 VGS=10V VGS=4.5V
40
30
20
2.5V
10 2V 0 0 2 4 6 8 10
0
10
20
30
40
50
60
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
60
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
Gate Threshold Voltage
IDS =250A
50
40
30
Tj=125 C
o
20 Tj=25 C 10
o
Tj=-55 C
o
Normalized Threshold Voltage
ID - Drain Current (A)
0
0
1
2
3
4
0.0 -50 -25
0
25
50
75
100 125 150
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (C)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8 VGS = 10V 1.6 IDS = 16A Tj=150 C
o
Source-Drain Diode Forward
60
Normalized On Resistance
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 RON@Tj=25 C: 6m 0 25 50 75 100 125 150
o
IS - Source Current (A)
10
Tj=25 C
o
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (C)
VSD - Source-Drain Voltage (V)
Capacitance
6000 Frequency=1MHz 5000 10 VDS=10V ID = 16A
Gate Charge
4000 Ciss 3000
VGS - Gate-source Voltage (V)
8
C - Capacitance (pF)
6
4
2000 Coss 1000 Crss
2
0
0 0 5 10 15 20 25
0
10
20
30
40
50
60
70
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Avalanche Test Circuit and Waveforms
V DS L DUT IA S RG V DD tp
V D SX(SU S) V DS
V DD
tp
IL 0.0 1 tAV
EA S
Switching Time Test Circuit and Waveforms
V DS RD DUT V RG V DD
10%
tp
V DS
90%
GS
V GS t d (on) t r t d (off) t f
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp C ritical Zone T L to T P
R am p-up
T e m p e ra tu re
TL T sm ax
tL
T sm in R am p-down ts Preheat
25
t 25 C to Peak
T im e
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw
APM4230K
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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APM4230K
Carrier Tape & Reel Dimensions(Cont.)
T2
J C A B
T1
Application
A 3301
B 62 1.5
C 12.75 + 0.1 5
J 2 + 0.5
T1 12.4 +0.2
T2 2 0.2 Ao 6.4 0.1
W 12 + 0.3 - 0.1 Bo 5.2 0.1
P 8 0.1
E 1.75 0.1
SOP-8
F D D1 Po P1 5.5 0.1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1
Ko t 2.1 0.1 0.30.013
(mm)
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005
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