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| Data Sheet No. 2N5151L Type 2N5151L Geometry 9702 Polarity PNP Qual Level: JAN - JANS Features: * * * * Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/545 which Semicoa meets in all cases. Generic Part Number: 2N5151L REF: MIL-PRF-19500/545 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.3 ms, < 1% duty cycle Reverse Pulse Energy Power Disipation TA = 25oC ambient o Derate above 25 C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC Rating 80 100 5.5 2 10 15 Unit V V V A A mJ Watt o mW/ C o PT TJ TSTG 1.0 5.7 -65 to +200 -65 to +200 C C o Data Sheet No. 2N5151L Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB = 0, pulsed Base-Emitter Cutoff Current VEB = 4 V, IC = 0 VEB = 5.5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 VCE = 60 V, VBE = +2 V, TC = 150 C o Symbol V(BR)CBO IEBO1 IEBO2 ICES1 ICES2 ICEO ICEX Min 80 ------------- Max --1.0 1.0 1.0 1.0 50 500 Unit V A mA A mA A A ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.5 A, VCE = 5 V, pulsed IC = 5.0 A, VCE = 5 V, pulsed IC = 2.55 A, VCE = 5 V pulsed, TC = -55oC Base-Emitter Voltage, Nonsaturted VCE = 5 V, IC = 2.5 A, pulsed Base-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Collector-Emitter Saturation Voltage IC = 2.5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Symbol hFE1 hFE2 hFE3 hFE4 VBE VBE(sat)1 VBE(sat)2 VCE(sat)1 VCE(sat)2 Min 20 30 20 15 ----------- Max --90 ----1.45 1.45 2.2 0.75 1.5 Unit --------V dc V dc V dc V dc V dc Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 500 mA, f = 10 MHz Common Emitter, Small Signal Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 1 kHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz Symbol |hfe| Min 6.0 Max --- Unit --- hfe COBO 20 --- --250 --pF Switching Time Delay Time IC = 5 A, IB1 = 500 mA Storage Time IB2 = -500 mA Fall Time VBE(off) = 3.7 V Turn-Off Time RL = 6 ohms Symbol tON ts tf tOFF Min --------- Max 0.5 1.4 0.5 1.5 Unit s s s s |
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