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| VISHAY S503TX/S503TXR/S503TXRW Vishay Semiconductors MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage 2 1 SOT-143 Comments MOSMIC - MOS Monolithic Integrated Circuit 3 1 4 2 SOT-143R Features * Easy Gate 1 switch-off with PNP switching transistors inside PLL * High AGC-range with less steep slope * Integrated gate protection diodes * Low noise figure * High gain, very high forward transadmittance (40 mS typ.) * Improved cross modulation at gain reduction * SMD package 4 1 3 2 SOT-343R 4 3 19216 Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. Electrostatic sensitive device. Observe precautions for handling. Typical Application Mechanical Data Typ: S503TX Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S503TXR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S503TXRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 C block AGC C block RF in RG1 G2 G1 S D RFC VDD(VDS) RF out C block VGG (VRG1) 13650 Parts Table Part S503TX S503TXR S503TXRW X03 X8R WX8 Marking SOT-143 SOT-143R SOT-343R Package Document Number 85078 Rev. 1.2, 30-Aug-04 www.vishay.com 1 S503TX/S503TXR/S503TXRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1S - VG1S VG2SM Ptot TCh Tstg Value 8 30 10 6 1.5 6 200 150 - 55 to + 150 VISHAY Unit V mA mA V V V mW C C Maximum Thermal Resistance Parameter Channel ambient 1) 1) Test condition Symbol RthChA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition ID = 10 A, VG1S = VG2S = 0 Symbol V(BR)DSS Min 12 7 7 10 10 20 20 10 0.3 0.8 1.0 15 20 1.3 1.4 Typ. Max Unit V V V nA nA mA V V IG1S = 10 mA, VG2S = VDS = 0 V(BR)G1SS IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS + IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF) Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 A Remark on improving intermodulation behavior: By setting RG1 smaller than 56 k, typical value of IDSO will raise and improved intermodulation behavior will be performed. Electrical AC Characteristics Tamb = 25 C, unless otherwise specified VDS = 5 V, VG2S = 4 V, ID = 13 mA, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Test condition Symbol |y21s| Cissg1 Crss Coss Min 35 Typ. 40 2.3 30 1.4 Max 50 2.8 40 Unit mS pF fF pF www.vishay.com 2 Document Number 85078 Rev. 1.2, 30-Aug-04 VISHAY Parameter Power gain Test condition S503TX/S503TXR/S503TXRW Vishay Semiconductors Symbol Gps Gps Gps F F Xmod 90 18 40 Min Typ. 30 24 45 1 1.3 Max Unit dB dB dB dB dB dBV GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3.3 mS, GL = 1 mS, f = 800 MHz Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 105 dBV Package Dimensions in mm 96 12239 Document Number 85078 Rev. 1.2, 30-Aug-04 www.vishay.com 3 S503TX/S503TXR/S503TXRW Vishay Semiconductors Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 1.1 (0.043) 0.9 (0.035) VISHAY 0.9 (0.035) 0.75 (0.029) 0.15 (0.006) 0.08 (0.003) 1.4 (0.055) 1.2 (0.047) 3.0 (0.117) 2.8 (0.109) 0...0.1 (0...0.004) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 1.17 (0.046) ISO Method E 2.0 (0.078) 1.8 (0.070) 96 12240 Package Dimensions in mm 2.6 (0.101) 2.4 (0.094) 96 12238 www.vishay.com 4 Document Number 85078 Rev. 1.2, 30-Aug-04 VISHAY S503TX/S503TXR/S503TXRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85078 Rev. 1.2, 30-Aug-04 www.vishay.com 5 |
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