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PTF211301
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
Description
The PTF211301 is a 130-W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = -37 dBc - Adjacent channel power = -42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P-1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
Two-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-30 -35 35 30 Efficiency IM3
*
*
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
-40 -45 -50 -55 -60 36 38
25 20 15 10 5
* *
ACPR 40 42 44 46
Average Output Power (dBm)
PTF211301A Package 20260
RF Characteristics at TCASE = 25C unless otherwise indicated
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 28 W average
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps
Min
-- -- --
Typ
-37 13.5 25
Max
-- -- --
Units
dBc dB %
D
Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.5 A, POUT = 120 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
12 34 --
Typ
13.5 37 -30
Max
-- -- -28
Units
dB % dBc
D
IMD
ESD: Electrostatic discharge sensitive device -- observe handling precautions! Data Sheet 1 2004-01-02
PTF211301
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 1.5 A VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.07 3.2 --
Max
-- 1.0 -- 4.0 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 130 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 350 2.0 -40 to +150 0.50
Unit
V V C W W/C C C/W
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 1.50 A, POUT = 44 dBm
Intermodulation Distortion Products & Efficiency vs. Output Power
VDD = 28V, IDQ = 1.50 A, f = 2140 MHz, tone spacing = 1 MHz
-30 40 Efficiency 35 30 IM3 25 20 15 IM5 IM7 38 40 42 44 46 48 50 52 10 5 0 -35 -40
45
-5
Gain (dB), Efficiency (%)
35 30 25 20 15 Gain Efficiency
-15 -20 -25 -30 -35 -40 2210
IMD (dBc)
-45 -50 -55 -60 -65 -70
10 2060
2110
2160
Frequency (MHz)
Output Power, PEP (dBm)
Data Sheet
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Drain Efficiency (%)
Input Return Loss
Input Return Loss (dB)
40
-10
PTF211301
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 28V, f = 2140 MHz, tone spacing = 1 MHz
-30 -35 1.65 A -40 -45 -50 -55 -60 -65 38 40 42 44 46 48 50 52 1.20 A 1.80 A
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 1.50 A, f = 2170 MHz
15 14 Gain 55
3rd Order IMD (dBc)
Gain (dB)
13 12 11
35 25 15 5 37 42 47 52
Efficiency
1.35 A
1.50 A
10
Peak Output Power (dBm)
Output Power (dBm)
Single-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 1.50 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8.5 dB, 3.84 MHz bandwidth
-40 Efficiency -42 -44 -46 -48 ACPR Low -50 34 36 38 40 42 44 ACPR Up 0 25 20 15 10 5
IM3, Gain & Drain Efficiency vs Supply Voltage
IDQ = 1.50 A, f = 2140 MHz, POUT = 47.8 dBm PEP, tone spacing = 1 MHz
0 -5 45 40
Drain Efficiency (%)
IM3 (dBc)
-15 -20 -25 -30 -35 -40 -45 23 24 25 26 27 28 29 30 31 32 33 IM3 Up Gain
30 25 20 15 10 5 0
Average Output Power (dBm)
Supply Voltage (V)
Data Sheet
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Drain Efficiency (%)
Adjacent Channel Power Ratio (dBc)
-10
Efficiency
35
Drain Efficiency (%)
45
PTF211301
Typical Performance (cont.)
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 1.50 A, , POUT = 50.8 dBm PEP, f = 2140 MHz
-20
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage. Series show current.
1.03 2.25 A 4.50 A 6.75 A 9.00 A 11.25 A 13.50 A
Intermodulation Distortion (dBc)
-30 3rd Order -40 5th Order -50 7th Order -60 0 5 10 15 20 25 30 35
Normalized Bias Voltage
1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20 20 60 100
Tone Spacing (MHz)
Case Temperature (C)
Broadband Circuit Impedance
GE
G S
0.0
0.1
W ARD LOAD T HS TO L E NG
2050 MHz
Frequency
MHz 2050 2110 2140 2170 2220 R
Z Source
jX -7.02 -6.76 -6.75 -6.54 -6.36 R 1.43 1.27 1.19 1.25 1.12 6.58 6.14 5.96 5.82 5.45
Z Load
jX 0.19 0.66 0.80 1.09 1.49
Z Source
0.1
2220 MHz
2050 MHz
Data Sheet
4
W <---
A VE
2004-01-02
0.2
0 .1
Z Source
Z Load
ENGTHS T OW A RD
D
Z0 = 50
Z Load
2220 MHz
PTF211301
Test Circuit
Reference Circit Schematic for f = 2140 MHz
Circuit Assembly Information DUT PTF211301 PCB 0.76 mm. [.030"] thick, r = 4.5 Microstrip Electrical Characteristics at 2140 MHz 0.308 , 54 0.059 , 54 0.154 , 45 0.132 , 45 0.061 , 13 0.012 , 53 0.074 , 7 0.409 , 55 0.409 , 55 0.029 , 4 0.016 , 5 0.067 , 13 0.125 , 43 0.411 , 54
LDMOS Transistor Rogers TMM4 Dimensions: W x L (mm.) 23.24 x 1.30 4.45 x 1.30 11.43 x 1.78 9.83 x 1.78 4.22 x 10.08 0.89 x 1.32 5.00 x 17.73 30.99 x 1.22 30.99 x 1.22 1.93 x 29.72 1.52 x 25.10 1.91 x 12.90 9.32 x 1.85 30.99 x 1.30
2 oz. copper Dimensions: W xL (in.) 0.915 x 0.051 0.175 x 0.051 0.450 x 0.070 0.387 x 0.070 0.166 x 0.397 0.035 x 0.052 0.197 x 0.698 1.220 x 0.048 1.220 x 0.048 0.076 x 1.170 0.060 x 0.988 0.075 x 0.508 0.367 x 0.073 1.220 x 0.051
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14
Data Sheet
5
2004-01-02
PTF211301
Test Circuit (cont.)
Component C1 C2, C11, C19 C3, C9, C17 C4, C6 C5 C7 C8, C15, C16 C10, C18 C12, C13 C14 C20, C21, C22 J1, J2 L1, L2 QQ1 Q1 R1 R2 R3 R4 R5 R6 R7 R8 Description Manufacturer Capacitor, 10 F, 35 V, Tant TE series Digi-Key Capacitor, 0.1 F Digi-Key Capacitor, 0.01 F ATC Capacitor, 10 pF ATC Capacitor, 0.1 pF ATC Capacitor, 0.9 pF ATC Capacitor, 8.2 pF ATC Capacitor, 1 F ATC Capacitor, 0.7 pF ATC Capacitor, 1.2 pF ATC Capacitor, 0.01 F Digi-Key Connector, SMA, Female, Panel Mount Ferrite Voltage regulator Digi-Key Transistor Infineon Resistor, 10 , 1/4 W Digi-Key Resistor, 1.3 k, 1/10 W, 0603 Digi-Key Resistor, 1.2 k, 1/10 W, 0603 Digi-Key Potentiometer, 2 k, 4 W Digi-Key Resistor, 10 k, 1/4 W, 1206 Digi-Key Resistor, 24 k, 1/4 W, 1206 Digi-Key Resistor, 1 k, 1/4 W, 1206 Digi-Key Resistor, 3 k, 1/4 W, 1206 Digi-Key P/N or Comment PCS6106TR-ND, SMD PCC104BCT X08J103AFB 100 B 100 100 B 0R1 100 B 0R9 100 B 8R2 X24L105BVC 100 B 0R7 100 B 1R2 PCC1772CT-ND
LM7805 BCP56 P10ECT-ND P1.3KGCT-ND P1.2KGCT-ND 3224W-202ETR-ND P10KECT-ND P24KECT-ND P1.0KECT-ND P3.0KECT-ND
Data Sheet
6
2004-01-02
PTF211301
Test Circuit (cont.)
Reference Circuit1 (not to scale)
1 Gerber Files for this circuit available on request
Data Sheet
7
2004-01-02
PTF211301
Package Outline Specifications
Type PTF211301A Package Outline 20260 Package Description Standard Ceramic, flange Marking PTF211301A
Package 20260
45 X (2.03 [.080]) 2X 12.70 [.500] 4X R 1.52 [.060]
(2X 4.830.50 [.190.020])
D
S
+0.10 LID 13.21 -0.15 [.520 +.004 ] -.006 2X 3.25 [.128] 13.72 [.540] 23.370.51 [.920.020]
2X 1.63 [.064] R
G
SPH 1.57 [.062]
0.51 [.020]
22.350.23 [.880.009] 4.110.38 [.162.015] 0.038 [.0015] -A27.94 [1.100]
1.02 [.040]
34.04 [1.340]
ERA-H-30260-2-1-2302
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
8
2004-01-02
PTF211301 Confidential Revision History: Previous Version: Page
2004-01-02 2003-11-24, Preliminary Data Sheet
Data Sheet
Subjects (major changes since last revision) Preliminary status removed.
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
Edition 2004-01-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9
2004-01-02

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