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K4X56323PG - 7(8)E/G
8M x32 Mobile-DDR SDRAM
FEATURES
Mobile-DDR SDRAM
* 1.8V power supply, 1.8V I/O power * Double-data-rate architecture; two data transfers per clock cycle * Bidirectional data strobe(DQS) * Four banks operation * Differential clock inputs(CK and CK) * MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) * Internal Temperature Compensated Self Refresh * Deep Power Down Mode * All inputs except data & DM are sampled at the positive going edge of the system clock(CK). * Data I/O transactions on both edges of data strobe, DM for masking. * Edge aligned data output, center aligned data input. * No DLL; CK to DQS is not synchronized. * DM0 - DM3 for write masking only. * Auto refresh duty cycle - 15.6us for -25 to 85 C
Operating Frequency
DDR266 Speed @CL2 Speed @CL3
Note : 1. CAS Latency
*1 *1
DDR222 66Mhz 111Mhz
83Mhz 133Mhz
Address configuration
Organization 8M x32
- DM is internally loaded to match DQ and DQS identically.
Bank BA0,BA1
Row A0 - A11
Column A0 - A8
Ordering Information
Part No. K4X56323PG-7(8)E/GC3 K4X56323PG-7(8)E/GCA Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3),66MHz(CL=2) Interface LVCMOS Package 90FBGA Pb (Pb Free)
- 7(8)E 90FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 C ~ 85 C) - 7(8)G : 90 FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 C ~ 85 C) - C3/CA : 133MHz(CL=3)/111MHz(CL=3) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
January 2006
K4X56323PG - 7(8)E/G
FUNCTIONAL BLOCK DIAGRAM
Mobile-DDR SDRAM
32
LWE
I/O Control
CK, CK
Data Input Register Serial to parallel
LDM
Bank Select
64
1Mx64
Output Buffer 2-bit prefetch Sense AMP Refresh Counter Row Buffer Row Decoder
1Mx64 1Mx64 1Mx64
64
32
X32
DQi
Address Register
CK, CK
ADD
Column Decoder
LCBR LRAS Col. Buffer
Latency & Burst Length
Strobe Gen.
Data Strobe
Programming Register LCKE LRAS LCBR LWE LCAS LWCBR
LDM
Timing Register
DM Input Register
CK, CK
CKE
CS
RAS
CAS
WE
DM
January 2006
K4X56323PG - 7(8)E/G
< Bottom View*1 >
E1 9 A B C D E F G D1 H J K L M N P R E Ball Name CK, CK CS A A1 b CKE A0 ~ A11 BA0 ~ BA1 RAS D e 8 7 6 5 4 3 2 1 A B C D E F G H J K L M N P R 1 VSS VDDQ VSSQ VDDQ VSSQ VDD CKE A9 A6 A4 VSSQ VDDQ VSSQ VDDQ VSS 2
Mobile-DDR SDRAM
< Top View*2 >
90Ball(6x15) FBGA 3 VSSQ DQ30 DQ28 DQ26 DQ24 NC CK NC A8 A5 DQ8 DQ10 DQ12 DQ14 VSSQ 7 VDDQ DQ17 DQ19 DQ21 DQ23 NC WE CS A10/AP A2 DQ7 DQ5 DQ3 DQ1 VDDQ 8 DQ16 DQ18 DQ20 DQ22 DQS2 DM2 CAS BA0 A0 DM0 DQS0 DQ6 DQ4 DQ2 DQ0 9 VDD VSSQ VDDQ VSSQ VDDQ VSS RAS BA1 A1 A3 VDDQ VSSQ VDDQ VSSQ VDD
Package Dimension and Pin Configuration
DQ31 DQ29 DQ27 DQ25 DQS3 DM3 CK A11 A7 DM1 DQS1 DQ9 DQ11 DQ13 DQ15
Ball Function System Differential Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable Data Input Mask Data Strobe Data Input/Output Power Supply/Ground Data Output Power/Ground [Unit::mm]
z
< Top View*1 >
#A1 Ball Origin Indicator
CAS WE DM0~3 DQS0~3 DQ0 ~ 31 VDD/VSS VDDQ/VSSQ
SAMSUNG Week
K4X56323PG-XXXX
Symbol A A1 E E1 D D1 e b z
Min 0.25 7.90 12.90 0.45 -
Typ 8.00 6.40 13.00 11.20 0.80 0.50 -
Max 1.00 8.10 13.10 0.55 0.10 January 2006
K4X56323PG - 7(8)E/G
Input/Output Function Description
SYMBOL CK, CK TYPE Input DESCRIPTION
Mobile-DDR SDRAM
Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any banks). CKE is synchronous for all functions except for disabling outputs, which is achieved asynchronously. Input buffers, excluding CK, CK and CKE , are disabled during power-down and self refresh mode which are contrived for low standby power consumption. Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command decoder. All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. Command Inputs : RAS, CAS and WE (along with CS) define the command being entered. Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. DM pins include dummy loading internally, to match the DQ and DQS loading. For the x32, DM0 corresponds to the data on DQ0-DQ7 ; DM1 corresponds to the data on DQ8-DQ15, DM2 corresponds to the data on DQ16-DQ23, DM3 corresponds to the data on DQ24-DQ31 Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied. Address Inputs : Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1 determines which mode register ( mode register or extended mode register ) is loaded during the MODE REGISTER SET command. Data Input/Output : Data bus Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data. it is used to fetch write data. For the x32, DQS0 corresponds to the data on DQ0-DQ7 ; DQS1 corresponds to the data on DQ8-DQ15,DQS2 corresponds to the data on DQ16-DQ23, DQS3 corresponds to the data on DQ24-DQ31 No Connect : No internal electrical connection is present. DQ Power Supply : 1.7V to 1.95V DQ Ground. Power Supply : 1.7V to 1.95V Ground.
CKE
Input
CS
Input
RAS, CAS, WE DM0,DM1, DM2,DM3
Input Input
BA0, BA1 A [n : 0]
Input Input
DQ DQS0,DQS1, DQS2,DQS3
I/O I/O
NC VDDQ VSSQ VDD VSS
Supply Supply Supply Supply
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K4X56323PG - 7(8)E/G
Functional Description
Mobile-DDR SDRAM
POWER APPLIED
POWER ON
CKEH
DEEP POWER DOWN
PRECHARGE ALL BANKS
DEEP POWER DOWN
PARTIAL SELF REFRESH SELF REFRESH REFS REFSX
MRS EMRS MRS
IDLE ALL BANKS PRECHARGED
REFA
AUTO REFRESH
CKEL CKEH ACT POWER DOWN
POWER DOWN
CKEH ROW ACTIVE BURST STOP READ WRITEA READA READ READ
CKEL WRITE
WRITEA WRITE
WRITEA READA PRE PRE PRE
READA
WRITEA
READA
PRE
PRECHARGE PREALL
Automatic Sequence Command Sequence
Figure.1 State diagram
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K4X56323PG - 7(8)E/G
Mode Register Definition
Mode Register Set(MRS)
Mobile-DDR SDRAM
The mode register is designed to support the various operating modes of DDR SDRAM. It includes Cas latency, addressing mode, burst length, test mode and vendor specific options to make DDR SDRAM useful for variety of applications. The default value of the mode register is not defined, therefore the mode register must be written in the power up sequence of DDR SDRAM. The mode register is written by asserting low on CS, RAS, CAS and WE(The DDR SDRAM should be in active mode with CKE already high prior to writing into the mode register). The states of address pins A0 ~ A11 and BA0, BA1 in the same cycle as CS, RAS, CAS and WE going low are written in the mode register. Two clock cycles are required to complete the write operation in the mode register. Even if the power-up sequence is finished and some read or write operation is executed afterward, the mode register contents can be changed with the same command and two clock cycles. This command must be issued only when all banks are in the idle state. If mode register is changed, extended mode register automatically is reset and come into default state. So extended mode register must be set again. The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2, addressing mode uses A3, Cas latency(read latency from column address) uses A4 ~ A6, A7 ~ A11 is used for test mode. BA0 and BA1 must be set to low for proper MRS operation.
BA1
BA0
A11 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Address Bus
0
0
RFU*
0
0
0
CAS Latency
BT
Burst Length
Mode Register
A3 0 1
Burst Type Sequential Interleave
A6 0 0 0 0 1 1 1 1
A5 0 0 1 1 0 0 1 1
A4 0 1 0 1 0 1 0 1
CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved
A2 0 0 0 0 1 1 1 1
A1 0 0 1 1 0 0 1 1
A0 0 1 0 1 0 1 0 1
Burst Length Reserved 2 4 8 16 Reserved Reserved Reserved
Figure.2 Mode Register Set
Note : RFU(Reserved for future use) should stay "0" during MRS cycle
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K4X56323PG - 7(8)E/G
Burst address ordering for burst length
Burst Length 2 Starting Address (A3, A2, A1, A0) xxx0 xxx1 xx00 4 xx01 xx10 xx11 x000 x001 x010 8 x011 x100 x101 x110 x111 0000 0001 0010 0011 0100 0101 0110 16 0111 1000 1001 1010 1011 1100 1101 1110 1111 Sequential Mode 0, 1 1, 0 0, 1, 2, 3 1, 2, 3, 0 2, 3, 0, 1 3, 0, 1, 2 0, 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 0 2, 3, 4, 5, 6, 7, 0, 1 3, 4, 5, 6, 7, 0, 1, 2 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 0, 1, 2, 3, 4 6, 7, 0, 1, 2, 3, 4, 5 7, 0, 1, 2, 3, 4, 5, 6 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3 5, 6, 7,8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5 7, 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6 8, 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6, 7 9, 10, 11, 12, 13, 14,15, 0, 1, 2, 3, 4, 5, 6, 7, 8 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11,12 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14
Mobile-DDR SDRAM
Interleave Mode 0, 1 1, 0 0, 1, 2, 3 1, 0, 3, 2 2, 3, 0, 1 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15 1, 0, 3, 2, 5, 4, 7, 6, 9, 8, 11,10,13,12,15,14 2, 3, 0, 1, 6, 7, 4, 5,10,11, 8, 9, 14,15,12,13 3, 2, 1, 0, 7, 6, 5, 4,11,10, 9, 8, 15,14,13,12 4, 5, 6, 7, 0, 1, 2, 3,12,13,14,15, 8, 9, 10,11 5, 4, 7, 6, 1, 0, 3, 2,13,12,15,14, 9, 8,11,10 6, 7, 4, 5, 2, 3, 0, 1,14,15,12,13,10,11, 8, 9 7, 6, 5, 4, 3, 2, 1, 0, 15,14,13,12,11,10, 9, 8 8, 9,10,11,12,13,14,15, 0, 1, 2, 3, 4, 5, 6, 7 9, 8, 11,10,13,12,15,14,1, 0, 3, 2, 5, 4, 7, 6 10,11, 8, 9, 14,15,12,13, 2, 3, 0, 1, 6, 7, 4, 5 11,10, 9, 8, 15,14,13,12, 3, 2, 1, 0, 7, 6, 5, 4 12,13,14,15, 8, 9, 10,11, 4, 5, 6, 7, 0, 1, 2, 3 13,12,15,14, 9, 8,11,10, 5, 4, 7, 6, 1, 0, 3, 2 14,15,12,13,10,11, 8, 9, 6, 7, 4, 5, 2, 3, 0, 1 15,14,13,12,11,10, 9, 8, 7, 6, 5, 4, 3, 2, 1, 0
January 2006
K4X56323PG - 7(8)E/G
Extended Mode Register Set(EMRS)
Mobile-DDR SDRAM
The extended mode register is designed to support partial array self refresh or driver strength control. EMRS cycle is not mandatory and the EMRS command needs to be issued only when either PASR or DS is used. The default state without EMRS command issued is half driver strength, and Full array refreshed. The extended mode register is written by asserting low on CS, RAS, CAS, WE and high on BA1 ,low on BA0(The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register). The state of address pins A0 ~ A11 in the same cycle as CS, RAS, CAS and WE going low is written in the extended mode register. Two clock cycles are required to complete the write operation in the extended mode register. Even if the power-up sequence is finished and some read or write operations is executed afterward, the mode register contents can be changed with the same command and two clock cycles. But this command must be issued only when all banks are in the idle state. A0 - A2 are used for partial array self refresh and A5 - A6 are used for driver strength control. "High" on BA1 and"Low" on BA0 are used for EMRS. All the other address pins except A0,A1,A2,A5,A6, BA1, BA0 must be set to low for proper EMRS operation. Refer to the table for specific codes.
Extended MRS for PASR(Partial Array Self Refresh) & DS(Driver Strength Control)
BA1 BA0 A11 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus
1
0
RFU*
0
0
0
DS
RFU*
PASR
Mode Register
DS A6 0 0 1 1 A5 0 1 0 1 Driver Strength Full 1/2 1/4 1/8
Internal TCSR Self refresh cycle is controlled automatically by internal temperature sensor and control circuit according to the three temperature ranges ; 45 C and 85 C A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1
PASR Refreshed Area Full Array 1/2 of Full Array 1/4 of Full Array Reserved Reserved Reserved Reserved Reserved
Figure.3 Extended Mode Register Set
Note : RFU(Reserved for future use) should stay "0" during EMRS cycle
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K4X56323PG - 7(8)E/G
Internal Temperature Compensated Self Refresh (TCSR)
Mobile-DDR SDRAM
Note : 1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the three temperature ranges ; 45 C and 85 C. 2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored. 3. It has +/- 5 C tolerance. Self Refresh Current (IDD6) Temperature Range Full Array 45 C*3 85 C 200 450 -E 1/2 Array 160 300 1/4 Array 140 250 Full Array 150 300 -G 1/2 Array 135 250 1/4 Array 130 uA 225 Unit
Partial Array Self Refresh (PASR)
Note : 1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option. 2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
BA1=0 BA0=0
BA1=0 BA0=1
BA1=0 BA0=0
BA1=0 BA0=1
BA1=0 BA0=0
BA1=0 BA0=1
BA1=1 BA0=0
BA1=1 BA0=1
BA1=1 BA0=0
BA1=1 BA0=1
BA1=1 BA0=0
BA1=1 BA0=1
- Full Array
- 1/2 Array
- 1/4 Array
Partial Self Refresh Area
Figure.4 EMRS code and TCSR , PASR
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K4X56323PG - 7(8)E/G
Absolute maximum ratings
Parameter Voltage on any pin relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD VDDQ TSTG PD IOS
Mobile-DDR SDRAM
Value -0.5 ~ 2.7 -0.5 ~ 2.7 -0.5 ~ 2.7 -55 ~ +150 1.0 50
Unit V V V C W mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommend operation condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25C to 85C) Parameter Supply voltage(for device with a nominal VDD of 1.8V) I/O Supply voltage Input logic high voltage Input logic low voltage Output logic high voltage Output logic low voltage Input leakage current Output leakage current Symbol VDD VDDQ VIH(DC) VIL(DC) VOH(DC) VOL(DC) II IOZ Min 1.7 1.7 0.7 x VDDQ -0.3 0.9 x VDDQ -2 -5 Max 1.95 1.95 VDDQ+0.3 0.3 x VDDQ 0.1 x VDDQ 2 5 Unit V V V V V V uA uA Note 1 1 2 2 IOH = -0.1mA IOL = 0.1mA
Note : 1. Under all conditions, VDDQ must be less than or equal to VDD. 2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
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K4X56323PG - 7(8)E/G
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, Tc = -25 to 85C) Parameter
Operating Current (One Bank Active)
Mobile-DDR SDRAM
Symbol
IDD0
Test Condition
tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH; CS is HIGH between valid commands; address inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, tCK = t CKmin ; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is HIGH; CS is HIGH, tCK = t CKmin ;address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin ;address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH;address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin ;address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE
DDR266
65
DDR222
65
Unit
mA
IDD2P Precharge Standby Current in power-down mode IDD2PS
0.3 mA 0.3
IDD2N Precharge Standby Current in non power-down mode IDD2NS
12
10 mA
8
6
IDD3P Active Standby Current in power-down mode IDD3PS
5 mA 2
IDD3N Active Standby Current in non power-down mode (One Bank Active)
25
20 mA
IDD3NS
20
15
IDD4R Operating Current (Burst Mode) IDD4W
one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts; I OUT = 0 mA address inputs are SWITCHING; 50% data change each burst transfer one bank active; BL = 4; tCK = tCKmin ; continuous write bursts;address inputs are SWITCHING; 50% data change each burst transfer tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH;address and control inputs are SWITCHING; data bus inputs are STABLE CKE is LOW; tCK = tCKmin ; Extended Mode Register set to all 0's; address and control inputs are STABLE; data bus inputs are STABLE -E TCSR Range Full Array 1/2 Array 1/4 Array Full Array -G 1/2 Array 1/4 Array
110
95 mA
90
80
Refresh Current
IDD5
140 45*1 200 160 140 150 135 130 10
125 85 450 300 250
mA C
Self Refresh Current
IDD6
uA 300 250 225 uA
Deep Power Down Current
IDD8*2
Address and control inputs are STABLE; data bus inputs are STABLE
Note : 1. It has +/- 5C tolerance. 2. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request. Please contact Samsung for more information. 3. IDD specifications are tested after the device is properly intialized. 4. Input slew rate is 1V/ns. 5. Definitions for IDD: LOW is defined as V IN 0.1 * V DDQ ; HIGH is defined as V IN 0.9 * V DDQ ; STABLE is defined as inputs stable at a HIGH or LOW level ; SWITCHING is defined as: - address and command: inputs changing between HIGH and LOW once per two clock cycles ; - data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE.
January 2006
K4X56323PG - 7(8)E/G
AC Operating Conditions & Timming Specification
Parameter/Condition Input High (Logic 1) Voltage, all inputs Input Low (Logic 0) Voltage, all inputs Input Crossing Point Voltage, CK and CK inputs Symbol VIH(AC) VIL(AC) VIX(AC) Min 0.8 x VDDQ -0.3 0.4 x VDDQ
Mobile-DDR SDRAM
Max VDDQ+0.3 0.2 x VDDQ 0.6 x VDDQ
Unit V V V
Note 1 1 2
Note : 1. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
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K4X56323PG - 7(8)E/G
AC Timming Parameters & Specifications
Parameter CL=2 CL=3 Symbol DDR266 Min 12.0 7.5 67.5 45 22.5 22.5 15 15 2tCK+tRP 1 1 0.45 0.45 2 2 2 2 0.55 0.55 8 6 8 6 0.6 0.5 0.9 0.4 0.75 0 0.25 0.4 0.4 0.2 0.2 0.9 1.3 1.3 2.6 0.8 0.8 1.8 1.0 6.0 0.4 0.25 0.6 1.1 0.6 0.6 1.1 1.1 0.6 1.25 70,000 Max
Mobile-DDR SDRAM
DDR222 Min 15.0 9.0 81 54 27 27 15 15 2tCK+tRP 1 1 0.45 0.45 2.5 2.5 2.5 2.5 0.55 0.55 8 6 8 6 0.7 0.5 0.9 0.4 0.75 0 0.25 0.4 0.4 0.2 0.2 0.9 1.5 1.5 3.0 1.1 1.1 2.4 1.0 7.0 0.4 0.25 0.6 1.1 0.6 0.6 1.1 1.1 0.6 1.25 70,000 Max
Unit
Note
Clock cycle time Row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in to Active delay Last data in to Read command Col. address to Col. address delay Clock high level width Clock low level width DQ Output data access time from CK/ CK DQS Output data access time from CK/CK Data strobe edge to ouput data edge Read Preamble Read Postamble CK to valid DQS-in DQS-in setup time DQS-in hold time DQS-in high level width DQS-in low level width DQS falling edge to CK setup time DQS falling edge hold time from CK DQS-in cycle time Address and Control Input setup time Address and Control Input hold time Address & Control input pulse width DQ & DM setup time to DQS DQ & DM hold time to DQS DQ & DM input pulse width
tCK tRC tRAS tRCD tRP tRRD tWR tDAL tCDLR tCCD tCH tCL
ns ns ns ns ns ns ns tCK tCK tCK tCK ns 3 2
CL=2 CL=3 CL=2 CL=3
tAC
tDQSCK tDQSQ
ns ns tCK tCK tCK ns tCK tCK tCK tCK tCK tCK ns ns 1 1 1 ns ns ns ns ns tCK tCK 5,6 5,6 4
CL=2 CL=3
tRPRE tRPST tDQSS tWPRES tWPREH tDQSH tDQSL tDSS tDSH tDSC tIS tIH tIPW tDS tDH tDIPW tLZ tHZ tWPST tWPRE
DQ & DQS low-impedence time from CK/CK DQ & DQS high-impedence time from CK/CK DQS write postamble time DQS write preamble time
January 2006
K4X56323PG - 7(8)E/G
DDR266 Min Refresh interval time Mode register set cycle time Power down exit time CKE min. pulse width(high and low pulse width) Auto refresh cycle time Exit self refresh to active command Data hold from DQS to earliest DQ edge Data hold skew factor Clock half period tREF tMRD tPDEX tCKE tRFC tXSR tQH tQHS tHP tCLmin or tCHmin 2 1*tCK +tIS 2 80 120 tHPmin tQHS 0.75 Max 64
Mobile-DDR SDRAM
DDR222 Min Max 64 2 1*tCK +tIS 2 90 120 tHPmin tQHS 1.0 tCLmin or tCHmin ms tCK ns tCK ns ns ns ns ns 7
Parameter
Symbol
Unit
Note
January 2006
K4X56323PG - 7(8)E/G
Note :
1. Input Setup/Hold Slew Rate Derating Input Setup/Hold Slew Rate (V/ns) 1.0 0.8 0.6 tIS (ps) 0 +50 +100
Mobile-DDR SDRAM
tIH (ps) 0 +50 +100
This derating table is used to increase tIS/tIH in the case where the input slew rate is below 1.0V/ns. 2. Minimum 3CLK of tDAL(= tWR + tRP) is required because it need minimum 2CLK for tWR and minimum 1CLK for tRP. 3. tAC(min) value is measured at the high Vdd(1.95V) and cold temperature(-25C). tAC(max) value is measured at the low Vdd(1.7V) and hot temperature(85C). tAC is measured in the device with half driver strength and under the AC output load condition (Fig.7 in next Page). 4. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress, DQS could be High at this time, depending on tDQSS. 5. I/O Setup/Hold Slew Rate Derating I/O Setup/Hold Slew Rate (V/ns) 1.0 0.8 0.6 tDS (ps) 0 +75 +150 tDH (ps) 0 +75 +150
This derating table is used to increase tDS/tDH in the case where the I/O slew rate is below 1.0V/ns. 6. I/O Delta Rise/Fall Rate(1/slew-rate) Derating Delta Rise/Fall Rate (ns/V) 0 0.25 0.5 tDS (ps) 0 +50 +100 tDH (ps) 0 +50 +100
This derating table is used to increase tDS/tDH in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate is calculated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 1.0V/ns and slew rate 2 =0.8V/ns, then the Delta Rise/Fall Rate =-0.25ns/V. 7. Maximum burst refresh cycle : 8
January 2006
K4X56323PG - 7(8)E/G
AC Operating Test Conditions(VDD = 1.7V to 1.95V, Tc = -25 to 85C)
Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input signal minimum slew rate Output timing measurement reference level Output load condition Value
Mobile-DDR SDRAM
Unit V V V/ns V
0.8 x VDDQ / 0.2 x VDDQ 0.5 x VDDQ 1.0 0.5 x VDDQ See Figure.7
1.8V
13.9K Output 10.6K VOH (DC) = 0.9 x VDDQ , IOH = -0.1mA VOL (DC) = 0.1 x VDDQ , IOL = 0.1mA 20pF Output Z0=50
Vtt=0.5 x VDDQ
50
20pF
Figure.6 DC Output Load Circuit Figure.7 AC Output Load Circuit
Input/Output Capacitance(VDD=1.8, VDDQ=1.8V, TC = 25C, f=1MHz)
Parameter Input capacitance (A0 ~ A11, BA0 ~ BA1, CKE, CS, RAS,CAS, WE) Input capacitance( CK, CK ) Data & DQS input/output capacitance Input capacitance(DM) Symbol CIN1 CIN2 COUT CIN3 Min 1.5 1.5 2.0 2.0 Max 3.0 3.5 4.5 4.5 Unit pF pF pF pF
January 2006
K4X56323PG - 7(8)E/G
Parameter Maximum peak Amplitude allowed for overshoot area Maximum peak Amplitude allowed for undershoot area Maximum overshoot area above VDD Maximum undershoot area below VSS
Mobile-DDR SDRAM
Specification 0.9V 0.9V 3V-ns 3V-ns
AC Overshoot/Undershoot Specification for Address & Control Pins
Maximum Amplitude
Overshoot Area
Volts (V)
VDD VSS
Undershoot Area
Maximum Amplitude Time (ns)
Figure.8 AC Overshoot and Undershoot Definition for Address and Control Pins
AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins
Parameter Maximum peak Amplitude allowed for overshoot area Maximum peak Amplitude allowed for undershoot area Maximum overshoot area above VDDQ Maximum undershoot area below VSSQ Specification 0.9V 0.9V 3V-ns 3V-ns
Maximum Amplitude
Overshoot Area
Volts (V)
VDDQ VSSQ
Undershoot Area
Maximum Amplitude Time (ns)
Figure.9 AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins
January 2006
K4X56323PG - 7(8)E/G
Command Truth Table(V=Valid, X=Dont Care, H=Logic High, L=Logic Low)
COMMAND Register Mode Register Set Auto Refresh H Entry Refresh Self Refresh Exit L H H L L H H Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable Entry Deep Power Down Exit Burst Stop Bank Selection Precharge All Banks H Entry Active Power Down Exit Entry Precharge Power Down H Exit DM No operation (NOP) : Not defined L H H H X L H H H H L V X X X X V V X X X L H H L L H H H H L L X H V X X V X X V X X X X X H X L L H L L H H X H L X H X H X L X X L L X L H X H L X H H H H H CKEn-1 CKEn H X H L L L H CS L RAS L CAS L WE L
Mobile-DDR SDRAM
BA0,1
A10/AP OP CODE X
A11, A9 ~ A0
Note 1, 2 3 3 3
X 3 V V Row Address L H L Column Address (A0~A8) Column Address (A0~A8) X X V X L X H 5 7 4 4 4 4, 6
H H
X L
L L
H H
L H
L L
V
H
X
X
X X
8 9 9
Note :
1. OP Code : Operand Code. A0 ~ A11 & BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2.EMRS/ MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. 5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 7. Burst stop command is valid at every burst length. 8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
January 2006
K4X56323PG - 7(8)E/G
Functional Truth Table
Current State PRECHARGE STANDBY CS L L L L L L ACTIVE STANDBY L L L L L L L READ L L L L L L L RAS H H L L L L H H H L L L L H H H L L L L CAS H L H H L L H L L H H L L H L L H H L L WE L X H L H L L H L H L H L L H L H L H L X BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add Address
Mobile-DDR SDRAM
Command Burst Stop READ/WRITE Active PRE/PREA Refresh MRS Burst Stop READ/READA WRITE/WRITEA Active PRE/PREA Refresh MRS Burst Stop READ/READA WRITE/WRITEA Active PRE/PREA Refresh MRS ILLEGAL*2 ILLEGAL*2
Action
Bank Active, Latch RA ILLEGAL*4 AUTO-Refresh*5 Mode Register Set*5 NOP Begin Read, Latch CA, Determine Auto-Precharge Begin Write, Latch CA, Determine Auto-Precharge Bank Active/ILLEGAL*2 Precharge/Precharge All ILLEGAL ILLEGAL Terminate Burst Terminate Burst, Latch CA, Begin New Read, Determine Auto-Precharge*3 ILLEGAL Bank Active/ILLEGAL*2 Terminate Burst, Precharge ILLEGAL ILLEGAL
January 2006
K4X56323PG - 7(8)E/G
Functional truth table
Current State WRITE CS L L RAS H H CAS H L WE L H X BA, CA, A10 Address Command Burst Stop READ/READA
Mobile-DDR SDRAM
Action ILLEGAL Terminate Burst With DM=High, Latch CA, Begin Read, Determine Auto-Precharge*3
L
H
L
L
BA, CA, A10
Terminate Burst, Latch CA, WRITE/WRITEA Begin new Write, Determine Auto-Precharge*3 Active PRE/PREA Refresh Bank Active/ILLEGAL*2 Terminate Burst With DM=High, Precharge ILLEGAL ILLEGAL ILLEGAL *6
L L L L READ with AUTO PRECHARGE*6 (READA) L L L L L L L WRITE with AUTO RECHARGE*7 (WRITEA) L L L L L L L
L L L L H H H L L L L H H H L L L L
H H L L H L L H H L L H L L H H L L
H L H L L H L H L H L L H L H L H L
BA, RA BA, A10 X
Op-Code, Mode-Add MRS X BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Burst Stop READ/READA
WRITE/WRITEA ILLEGAL Active PRE/PREA Refresh *6 *6 ILLEGAL ILLEGAL ILLEGAL *7
Op-Code, Mode-Add MRS X BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Burst Stop READ/READA
WRITE/WRITEA *7 Active PRE/PREA Refresh *7 *7 ILLEGAL ILLEGAL
Op-Code, Mode-Add MRS
January 2006
K4X56323PG - 7(8)E/G
Functional truth table
Current State PRECHARGING (DURING tRP) CS L L L L L L ROW ACTIVATING (FROM ROW ACTIVE TO tRCD) L L L L L L WRITE RECOVERING (DURING tWR OR tCDLR) L L L L L L L RAS H H L L L L H H L L L L H H H L L L L CAS H L H H L L H L H H L L H L L H H L L WE L X H L H L L X H L H L L H L H L H L X BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X BA, CA, A10 BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add Address
Mobile-DDR SDRAM
Command Burst Stop READ/WRITE Active PRE/PREA Refresh MRS Burst Stop READ/WRITE Active PRE/PREA Refresh MRS Burst Stop READ WRITE Active PRE/PREA Refresh MRS
Action ILLEGAL*2 ILLEGAL*2 ILLEGAL*2 NOP*4(Idle after tRP) ILLEGAL ILLEGAL ILLEGAL*2 ILLEGAL*2 ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL ILLEGAL*2 ILLEGAL*2 WRITE ILLEGAL*2 ILLEGAL*2 ILLEGAL ILLEGAL
January 2006
K4X56323PG - 7(8)E/G
Functional truth table
Current State REFRESHING CS L L L L L L MODE REGISTER SETTING L L L L L L RAS H H L L L L H H L L L L CAS H L H H L L H L H H L L WE L X H L H L L X H L H L X BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add X BA, CA, A10 BA, RA BA, A10 X Op-Code, Mode-Add Address
Mobile-DDR SDRAM
Command Burst Stop READ/WRITE Active PRE/PREA Refresh MRS Burst Stop READ/WRITE Active PRE/PREA Refresh MRS ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL
Action
January 2006
K4X56323PG - 7(8)E/G
Functional truth table
Current State SELFREFRESHING*8 CKE n-1 L L L L L L POWER DOWN DEEP POWER DOWN ALL BANKS IDLE*9 L L L L H H H H H H H H L ANY STATE other than listed above H CKE n H H H H H L H L H L H L L L L L L L X H CS H L L L L X X X H X X L H L L L L L X X RAS X H H H L X X X X X X L X H H H H L X X CAS X H H L X X X X X X X L X H H H L X X X WE X H L X X X X X X X X H X H L L X X X X Add X X X X X X X X X X X X X X X X X X X X
Mobile-DDR SDRAM
Action Exit Self-Refresh Exit Self-Refresh ILLEGAL ILLEGAL ILLEGAL NOPeration(Maintain Self-Refresh) Exit Power Down(Idle after tPDEX) NOPeration(Maintain Power Down) Exit Deep Power Down*10 NOPeration(Maintain Deep Power Down) Refer to Function True Table Enter Self-Refresh Enter Power Down Enter Power Down Enter Deep Power Down ILLEGAL ILLEGAL ILLEGAL Refer to Current State=Power Down Refer to Function Truth Table
ABBREVIATIONS : H=High Level, L=Low level, X=Dont Care Note : 1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle. 2. ILLEGAL to bank in specified state ; function may be legal in the bank indicated by BA, depending on the state of that bank.(ILLEGAL = Device operation and/or data integrity are not guaranteed.) 3. Must satisfy bus contention, bus turn around and write recovery requirements. 4. NOP to bank precharging or in idle sate. May precharge bank indicated by BA. 5. ILLEGAL if any bank is not idle. 6. Refer to "Read with Auto Precharge Timing Diagram" for detailed information. 7. Refer to "Write with Auto Precharge Timing Diagram" for detailed information. 8. CKE Low to High transition will re-enable CK, CK and other inputs asynchronously. A minimum setup time must be satisfied before issuing any command other than EXIT. 9. Power-Down, Self-Refresh and Deep Power Down Mode can be entered only from All Bank Idle state. 10. The Deep Power Down Mode is exited by asserting CKE high and full initialization is required after exiting Deep Power Down Mode.
January 2006

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