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| Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 6.90.1 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 0.7 4.0 s Features q q q 0.65 max. 1.0 1.0 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 150 150 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.20.1 0.65 max. 0.45+0.1 - 0.05 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board +0.1 s Absolute Maximum Ratings 0.45-0.05 +0.1 (Ta=25C) 2.50.5 2.50.5 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 75V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA IC = 500mA, IB = 25mA*2 IC = 500mA, IB = 25mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 150 150 5 120 40 0.11 0.8 90 12 *2 14.50.5 Unit A V V V 340 0.3 1.2 V V MHz 20 pF Pulse measurement *1h FE1 Rank classification R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 1200 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 1000 2SD2184 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=100C 25C -25C VCE(sat) -- IC IC/IB=20 Collector power dissipation PC (W) 1.0 Collector current IC (mA) 0.8 800 IB=8mA 7mA 6mA 5mA 0.6 600 4mA 400 3mA 2mA 200 1mA 0.4 0.2 0 0 40 80 120 160 200 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=20 500 VCE=2V 200 fT -- I E Ta=25C VCB=10V 160 Base to emitter saturation voltage VBE(sat) (V) 400 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 100C 300 Ta=100C 200 25C -25C 100 Transition frequency fT (MHz) 0.3 1 3 10 30 Forward current transfer ratio hFE 120 80 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 60 Collector output capacitance Cob (pF) 50 Ta=25C f=1MHz IE=0 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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