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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. KTA1551T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTC3551T. C L G High-Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCES VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING -50 -50 -50 -5 -1.0 -3 -200 0.9 150 -55 ) 150 UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-40V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-100 A, VBE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-500mA, IB=-10mA IC=-300mA, IB=-6mA IC=-500mA, IB=-10mA VCE=-2V, IC=-100mA VCE=-10V, IC=-300mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =-25V RL OUTPUT MIN. -50 -50 -50 -5 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-500mA 2001. 6. 28 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM SK TYP. -280 -145 -0.81 420 9 35 MAX. -0.1 -0.1 -430 -220 -1.2 560 MHz pF UNIT A A V V V V mV mV V - 170 - nS - 30 - 1/3 KTA1551T I C - V CE A h FE - I C -20m A -10m -8mA -6mA -1K COLLECTOR CURRENT I C (A) -800 -600 -400 -200 0 0 DC CURRENT GAIN h FE 0 -4 -5 0 mA -30 m mA 1K 500 300 Ta=75 C Ta=25 C Ta=-25 C -4mA -2mA 100 50 30 VCE =-2V IB=0mA -0.2 -0.4 -0.6 -0.8 -1.0 10 -0.01 -0.03 -0.1 -0.3 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C /I B =20 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 5C =-2 Ta -1 -0.5 -0.3 I C /I B =50 -0.1 -0.05 -0.03 Ta= 75 C -0.1 -0.05 -0.03 -25 Ta= C 75 Ta= 25 Ta= C C 25 C Ta= -0.01 -0.01 -0.03 -0.1 -0.3 -1 -0.01 -0.01 -0.03 -0.1 -0.3 -1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) -5 -3 COLLECTOR CURRENT I C (A) I C /I B =50 I C - V BE -1.0 -0.9 -0.8 -0.7 -0.6 Ta=7 5C Ta=2 5C VCE =-2V -1 -0.5 -0.3 Ta=-25 C Ta=25 C Ta=75 C -0.5 -0.4 -0.3 -0.2 -0.1 0 0 -0.2 -0.4 -0.1 -0.01 -0.03 -0.1 -0.3 -1 -0.6 -0.8 Ta=-2 5C -1.0 -1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 28 Revision No : 0 2/3 KTA1551T fT - I C TRANSITION FREQUENCY f T (MHz) 5K 3K COLLECTOR OUTPUT CAPACITANCE C ob (pF) VCE =-10V C ob - V CB 100 50 30 f=1MHz 1K 500 300 10 5 3 100 50 -0.01 -0.03 -0.1 -0.3 -1 1 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA -5 -3 COLLECTOR CURRENT I C (A) -1 -0.5 -0.3 Pc - Ta I C MAX.(PULSED) COLLECTOR POWER DISSIPATION PC (W) 1.2 MOUNTED ON A 10 S* 0 * 50 S 0 1m I C MAX (CONTINUOUS) D C O PE RA N O TI S* 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 10 m S* 10 0m S* -0.1 -0.05 -0.03 -0.01 -0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 -0.3 -1 -3 -10 -30 -100 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 28 Revision No : 0 3/3 |
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