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| SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 AUGUST 1995 7 FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE PARTMARKING DETAILS BCP53 BCP56 BCP56 10 BCP56 16 C BCP56 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 100 80 5 1.5 1 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 100 80 5 100 20 10 0.5 1.0 40 25 63 100 250 100 160 125 160 250 MHz TYP. MAX. UNIT V V V nA CONDITIONS. IC=100A IC= 10mA * IE=10A VCB=30V VCB=30V, Tamb=150C VEB=5V IC=500mA, IB=50mA* IC=500mA, VCE=2V* IC=150mA, IC=500mA, IC=150mA, IC=150mA, VCE=2V* VCE=2V* VCE=2V* VCE=2V* A A Emitter Cut-Off Current IEBO VCE(sat) VBE(on) V V Static Forward Current hFE Transfer Ratio BCP56-10 BCP56-16 Transition Frequency fT IC=50mA, VCE=10V, f=100MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 18 |
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