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| AP4800GM Pb Free Plating Product Advanced Power Electronics Corp. Low On-Resistance Fast Switching Simple Drive Requirement D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G 25V 18m 9A ID SO-8 S S S Description DD The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. SS Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 20 9 7 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Max. Value 50 Unit /W Data and specifications subject to change without notice 20020430 AP4800GM Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.037 Max. Units 18 33 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, I D=9A VGS=4.5V, I D=7A 20 10.9 1.9 7.4 7 10.5 20 17.5 390 245 100 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o VDS=VGS, ID=250uA VDS=15V, I D=10A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= 20V ID=9A VDS=15V VGS=5V VDS=15V ID=1A RG=6.2,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V Tj=25, IS=2.3A, V GS=0V Min. - Typ. - Max. Units 1.92 1.3 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. AP4800GM 40 40 10V 8.0V 6.0V 30 30 10V 8.0V 6.0V ID , Drain Current (A) ID , Drain Current (A) 20 20 V GS =4.0V V GS =4.0V 10 10 T C =25 o C 0 0 1 2 3 4 5 6 0 0 1 2 3 4 T C =150 o C 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 34 1.8 30 I D =9A T C =25 I D =9A 1.6 V GS =10V 26 22 Normalized R DS(ON) 2 3 4 5 6 7 8 9 10 11 1.4 RDS(ON) (m ) 1.2 18 1 14 0.8 10 V GS (V) 0.6 -50 0 50 100 150 T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4800GM 10 3 9 2.5 8 7 ID , Drain Current (A) 2 6 5 PD (W) 1.5 4 1 3 2 0.5 1 0 25 50 75 100 125 150 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 100us Normalized Thermal Response (R thja) 10 0.2 1ms ID (A) 10ms 1 0.1 0.1 0.05 0.02 100ms 1s 0.1 0.01 PDM 0.01 Single Pulse t T Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W 10s T C =25 C Single Pulse 0.01 0.1 1 10 100 o DC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4800GM f=1.0MHz 16 10000 14 I D =9A V DS =15V VGS , Gate to Source Voltage (V) 12 1000 10 8 C (pF) Ciss Coss 100 6 Crss 4 2 0 0 5 10 15 20 25 30 10 1 6 11 16 21 26 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 2 IS(A) T j =150 o C T j =25 o C VGS(th) (V) 1 0 -50 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4800GM VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.6 x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D 0.6 x RATED VDS G S + QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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