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| Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features * * * * * Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1.2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP Ratings -30 20 --4 -16 1.4 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--2A Ratings min --30 --1 10 --1.0 2.9 4.2 --2.4 typ max Unit V A A V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62501 TS IM TA-2989 No.6995-1/4 2SJ608 Continued from preceding page. Parameter Symbol RDS(on) 1 RDS(on) 2 RDS(on) 3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--2A, VGS=--10V ID=--1A, VGS=--4.5V ID=--1A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A VDS=--10V, VGS=--10V, ID=-4A IS=--4A, VGS=0 Ratings min typ 60 90 100 560 150 95 9 4 70 55 12 2 2 --0.88 --1.5 max 78 126 140 Unit m m m pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Switching Time Test Circuit VIN 0V --10V VIN PW=10s D.C.1% VDD= --15V ID= --2A RL=7.5 D VOUT G 2SJ608 P.G 50 S --6 ID -- VDS .5V --4 .0 V .0V --6 .0V --10 --9 ID -- VGS VDS= --10V 25 C 0 --0.5 --1.0 --1.5 --2.0 --5 .5 --3 --4 V --8 Drain Current, ID -- A Drain Current, ID -- A --4 --6 --5 --4 --3 --2 --3 --2 --2.5V VGS= --2.0V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 25 --1 C --1 Ta =7 5C --2 5C --2.5 Ta= --25 --3.0 75C --3.5 --4.0 IT02845 120 140 160 IT02847 Drain-to-Source Voltage, VDS -- V 200 IT02844 200 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 150 150 --2.0A 100 ID= --1.0A 100 50 50 4.0V 5V = ---4. VGS S= A, G --1.0 A, V 1.0 I D= = -ID .0V = --10 A, V GS 2.0 I D= -- 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 0 --60 --40 --20 0 20 40 60 80 100 Gate-to-Source Voltage, VGS -- V IT02846 Ambient Temperature, Ta -- C C V --3.0 --7 No.6995-2/4 2SJ608 Forward Transfer Admittance, yfs -- S 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02848 1000 yfs -- ID VDS= --10V --10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A --1.0 7 5 3 2 --0.1 7 5 3 2 Ta= 75 C --25 C 25 C Ta= 75C 25C 0 --0.2 --0.4 --0.001 --0.6 --0.8 --1.0 --1.2 IT02849 Drain Current, ID -- A 1000 7 5 Diode Forward Voltage, VSD -- V SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 7 5 3 2 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 td(off) tf Coss Crss 100 7 5 3 2 td(on) tr 10 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 IT02851 Drain Current, ID -- A --12 IT02850 3 2 --10 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --4A --10 IDP= --16A ID= --4A --25C --0.01 7 5 3 2 Drain Current, ID -- A --8 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 <10s 10 1m 0s s 1 10 0ms 0m s DC op --6 era tio n --4 Operation in this area is limited by RDS(on). --2 0 0 2 4 6 8 10 12 14 IT02852 --0.01 --0.1 Ta=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC 2.0 PD -- Ta Drain-to-Source Voltage, VDS -- V IT03270 Allowable Power Dissipation, PD -- W 1.5 1.4 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03271 No.6995-3/4 |
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