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| SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A KTC2025D/L EPITAXIAL PLANAR NPN TRANSISTOR I J High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTA1045D/L Q K B M E D FEATURES C H F 1 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 120 120 5 1 2 1.0 8 150 -55 150 UNIT V V V A 1. BASE 2. COLLECTOR 3. EMITTER DPAK A C I J D O W H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on Time Switching Time Turn-off Time Storage Time (Note) : hFE(1) Classification ) TEST CONDITION VCB=50V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=5V, IC=50mA VCE=5V, IC=500mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz IC=500mA, IB=50mA IC=500mA, IB=50mA 1 20u sec 100 1uF 1uF 12V 1 I B1 I B2 24 IPAK SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VBE(sat) ton toff tstg MIN. 120 120 5 100 20 - TYP. 130 20 0.15 0.85 100 500 700 MAX. 1 1 320 0.4 1.2 - UNIT A A V V V MHz pF V V nS -2V VCE =12V I C =10I B1 =-10I B2 =500mA Y:100 200, GR:160 320 2003. 3. 27 Revision No : 3 1/2 KTC2025D/L I C - VCE COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) 1.6 COLLECTOR CURRENT I C (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 IB =0mA Tc=25 C 20 12 8 4 2 15 10 6 VCE(sat) - I C 1.0 0.5 0.3 I C /I B =10 0.1 0.05 0.03 4 5 6 0.01 1 3 10 30 100 300 1k 3k COLLECTOR-EMITTER VOLTAGE V CE (V) VBE - I C COLLECTOR CURRENT I C (A) 1.4 1.2 1.0 0.8 0.6 COLLECTOR DISSIPATION PC (W) 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE V BE (V) 1.2 10 8 6 4 2 0 1 COLLECTOR CURRENT I C (mA) VCE =5V Pc - Ta 1 Tc=25 C 2 Ta=25 C C ob - VCB OUTPUT CAPACITANCE Cob (pF) 200 f=1MHz 100 50 30 2 0 20 40 60 80 100 120 140 160 AMBIENT TMMPERATURE Ta ( C) 10 5 0.05 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCE (V) h FE - I C DC CURRENT GAIN hFE 300 VCE =5V SAFE OPERATING AREA COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 I C MAX.(PULSED) * I C MAX. (CONTINUOUS) 10 0 S 1 DC 10 mS * m* OP S* Tc ER =2 A 5 C TION 500 100 50 30 10 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 10 30 100 300 1k 5k 1 10 100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 3 VCEO MAX. 2/2 |
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