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| 2SD2414(SM) TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: mm * Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 100 80 5 7 1 1.5 40 150 -55 to 150 Unit V V V A A W C C JEDEC JEITA TOSHIBA Weight: 1.4 g (typ.) 2-10S2 1 2003-02-04 2SD2414(SM) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 4 A IC = 4 A, IB = 0.4 A IC = 4 A, IB = 0.4 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Output 10 Min 80 100 30 Typ. 0.25 0.9 10 200 0.4 Max 5 5 320 0.5 1.4 V V MHz pF Unit A A V 20 s Input IB2 IB1 IB2 Switching time Storage time tstg 2.5 s VCC 30 V Fall time tf IB1 = -IB2 = 0.3 A, duty cycle 1% 0.5 Marking D2414 Product No. Lot No. Explanation of Lot No. Month of manufacture (January to December are denoted by letters A to L respectively.) Year of manufacture (Last decimal digit of the year of manufacture) 2 2003-02-04 2SD2414(SM) IC - VCE 8 160 100 80 1.2 VCE - IC (V) Common emitter Tc = 25C Common emitter Tc = 25C 1.0 60 IB = 30 mA 0.6 100 150 200 300 400 (A) 6 VCE 40 30 20 60 IC 0.8 4 Collector-emitter voltage Collector current 0.4 700 0.2 2 IB = 10 mA 500 600 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 8 Collector-emitter voltage VCE (V) Collector current IC (A) VCE - IC 1.2 1.2 VCE - IC (V) Common emitter Tc = 100C Common emitter Tc = -55C 1.0 IB = 30 mA 60 0.6 100 150 200 300 400 (V) 1.0 IB = 20 mA 100 0.6 300 400 700 0.2 500 600 200 VCE 0.8 VCE Collector-emitter voltage 0.8 Collector-emitter voltage 0.4 0.4 700 500 600 0.2 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 Collector current IC (A) Collector current IC (A) hFE - IC 500 Tc = 100C Collector-emitter saturation voltage VCE (sat) (V) 300 Common emitter VCE = 1 V VCE (sat) - IC 2 1 0.5 0.3 Common emitter IC/IB = 10 hFE 25 100 50 30 -55 DC current gain 0.1 0.05 Tc = 100C 25 -55 10 5 0.03 0.1 0.3 1 3 10 0.02 0.02 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) 3 2003-02-04 2SD2414(SM) VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) 5 3 Common emitter IC/IB = 10 8 IC - VBE Common emitter VCE = 1 V (A) Collector current IC 1 0.5 0.3 25 Tc = -55C 6 100 4 0.1 0.02 0.1 0.3 1 3 10 2 Tc = 100C 25 -55 Collector current IC (A) 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) Safe Operating Area 10 IC max (pulsed)* 1 ms* 5 IC max (continuous) 10 ms* DC operation Tc = 25C 100 ms* (A) 3 Collector current IC 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. VCEO max 3 5 10 30 50 100 0.1 Collector-emitter voltage VCE (V) 4 2003-02-04 2SD2414(SM) RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2003-02-04 |
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