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| SI7344DP New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized ID (A) 17 14 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.008 @ VGS = 10 V 0.012 @ VGS = 4.5 V APPLICATIONS D DC/DC Conversion - Desktop - Server D Synchronous Rectification PowerPAKt SO-8 D 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G S N-Channel MOSFET Bottom View Ordering Information: SI7344DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "20 17 Steady State Unit V 11 9 50 A 1.6 1.8 1.1 -55 to 150 W _C ID IDM IS PD TJ, Tstg 14 3.7 4.1 2.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72128 S-03602--Rev. A, 31-Mar-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 22 55 4.5 Maximum 30 70 5.5 Unit _C/W C/W 1 SI7344DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 14 A VDS = 6 V, ID = 17 A IS = 3.7 A, VGS = 0 V 30 0.006 0.0095 33 0.75 1.1 0.008 0.012 S V 0.8 2.1 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 17 A 10 3.3 3.1 1.0 14 15 40 15 35 25 25 65 25 70 ns W 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 50 60 Transfer Characteristics I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 20 3V 10 20 TC = 125_C 25_C -55_C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72128 S-03602--Rev. A, 31-Mar-03 www.vishay.com 2 SI7344DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 2000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.016 C - Capacitance (pF) 1600 Ciss 0.012 VGS = 4.5 V 1200 0.008 VGS = 10 V 800 Coss 400 Crss 0.004 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6.0 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 17 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 17 A 3.6 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15 4.8 1.4 1.2 2.4 1.0 1.2 0.8 0.0 0 3 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.040 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.032 I S - Source Current (A) 0.024 ID = 17 A 0.016 TJ = 25_C 0.008 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 72128 S-03602--Rev. A, 31-Mar-03 www.vishay.com 3 SI7344DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Single Pulse Power 0.2 ID = 250 mA V GS(th) Variance (V) -0.0 Power (W) 160 120 -0.2 80 -0.4 -0.6 40 -0.8 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 1 ms 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 55_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72128 S-03602--Rev. A, 31-Mar-03 SI7344DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72128 S-03602--Rev. A, 31-Mar-03 www.vishay.com 5 |
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