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FLC087XP
GaAs FET & HEMT Chips FEATURES
* * * * High Output Power: P1dB = 28.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 31.5%(Typ.) Proven Reliability
Drain
DESCRIPTION
The FLC087XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25C 4.16 -65 to +175 175 Unit V V W C C
Gate Source Source
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with gate resistance of 400. 3. The operating channel temperature (Tch) should not exceed 145C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V IDS 0.6IDSS f = 8GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 200mA VDS = 5V, IDS = 15mA IGS = -15A Min. 75 -1.0 -5 27.5 6.0 Limit Typ. Max. 300 150 -2.0 28.5 7.0 31.5 25 450 -3.5 36 Unit mA mS V V dBm dB % C/W
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.3 July 1999
1
FLC087XP
GaAs FET & HEMT Chips
POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Total Power Dissipation (W)
5 Drain Current (mA) 300 4 3 2 1 2 4 6
VGS =0V
-0.5V 200 -1.0V 100 -1.5V -2.0V
0
50
100
150
200
8
10
Case Temperature (C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
30 Output Power (dBm) VDS=10V 28 IDS0.6IDSS 26 24 22 20 18 16 12 14 16 18 20 22 24 Input Power (dBm)
add f=4GHz 8GHz Pout f=4GHz 8GHz
P1dB & add vs. VDS
f=8GHz IDS0.6IDSS
30 P1dB (dbm) 29
add
add (%)
30 20 10
27 26 8
P1dB
20 10 9 10
Drain-Source Voltage (V)
2
add (%)
40
28
30
FLC087XP
GaAs FET & HEMT Chips
FREQUENCY (MHZ)
100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000
S11 MAG
.998 .965 .914 .883 .866 .857 .852 .848 .846 .845 .845 .845 .845 .845 .846 .847 .847 .848 .849 .850 .852 .853 .854 .855 .857
ANG
-11.7 -54.6 -92.8 -116.8 -132.5 -143.5 -151.7 -158.1 -163.4 -167.9 -171.8 -175.3 -178.4 178.7 176.1 173.6 171.2 169.0 166.8 164.7 162.7 160.8 158.9 157.1 155.3
Gate Drain
S-PARAMETERS VDS = 10V, IDS = 200mA S21 S12 MAG ANG MAG ANG
9.704 8.567 6.593 5.088 4.067 3.363 2.856 2.478 2.186 1.954 1.765 1.608 1.476 1.362 1.264 1.177 1.099 1.030 .967 .909 .856 .806 .760 .716 .675 172.7 145.8 121.3 104.7 92.4 82.4 73.7 65.9 58.6 51.8 45.2 38.9 32.7 26.7 20.8 15.0 9.3 3.7 -1.9 -7.4 -12.8 -18.1 -23.4 -28.7 -33.9 .006 .026 .039 .046 .048 .050 .051 .051 .052 .052 .052 .052 .053 .053 .053 .053 .053 .053 .053 .053 .054 .054 .054 .054 .055 83.8 61.3 42.4 31.3 24.5 20.0 16.9 14.6 12.9 11.5 10.5 9.6 8.9 8.4 8.0 7.6 7.3 7.1 7.0 6.9 6.8 6.7 6.7 6.7 6.6
S22 MAG
.510 .467 .399 .355 .332 .323 .320 .323 .330 .338 .349 .362 .375 .390 .406 .422 .439 .456 .474 .492 .511 .529 .548 .567 .585
ANG
-4.7 -21.1 -34.2 -42.2 -48.2 -53.7 -59.0 -64.3 -69.7 -74.9 -80.2 -85.3 -90.4 -95.3 -100.2 -105.0 -109.6 -114.2 -118.7 -123.1 -127.5 -131.7 -135.9 -140.0 -144.0
NOTE:* The data includes bonding wires.
n: number of wires n=1 (0.3mm length, 25m Dia Au wire) n=1 (0.3mm length, 25m Dia Au wire)
Download S-Parameters, click here
Source n=4 (0.3mm length, 25m Dia Au wire)
3
FLC087XP
GaAs FET & HEMT Chips
CHIP OUTLINE
60 (Unit: m)
Drain
70
65
170
Gate Source Source
155
50 550 66030
155
Source electrodes are electrically insulated from the bottom of the chip (PHS) Die Thickness: 6020m
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
4
61030
500

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