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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BAT74V Schottky barrier double diode
Product specification 2002 Sep 02
Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES * Low forward voltage * Low capacitance * Ultra small SMD plastic package * Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS * Ultra high-speed switching * Voltage clamping * Line termination * Inverse polarity protection. DESCRIPTION Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two separate dies encapsulated in a SOT666 ultra small SMD plastic package.
1 1 Top view Marking code: 74. 2 3
MAM461
BAT74V
PINNING PIN 1 2 3 4 5 6 anode 1 not connected cathode 2 anode 2 not connected cathode 1 DESCRIPTION
handbook, halfpage
6
5
4 6 4
3
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Ptot Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature tp 1 s; 0.5 tp < 10 ms Tamb 25 C - -65 - -65 CONDITIONS - - - MIN. MAX. 30 200 300 600 230 +150 125 +125 V mA mA mA mW C C C UNIT
2002 Sep 02
2
Philips Semiconductors
Product specification
Schottky barrier double diode
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA; note 1; see Fig.2 IR Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT666 standard mounting conditions. Soldering The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 416 reverse current diode capacitance VR = 25 V; note 1; see Fig.3 VR = 1 V; f = 1 MHz; see Fig.4 240 320 400 500 800 2 10 MAX.
BAT74V
UNIT mV mV mV mV mV A pF
UNIT K/W
2002 Sep 02
3
Philips Semiconductors
Product specification
Schottky barrier double diode
GRAPHICAL DATA
MSA892
BAT74V
10 3 handbook, halfpage IF (mA) 10
2 (1) (2) (3)
10 3 IR (A) 10 2
(2) (1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10 1
10 1 0 0.4 0.8 VF (V) 1.2 0 10 20 VR (V) 30
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
(1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
15
MSA891
Cd (pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
2002 Sep 02
4
Philips Semiconductors
Product specification
Schottky barrier double diode
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BAT74V
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2002 Sep 02
5
Philips Semiconductors
Product specification
Schottky barrier double diode
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BAT74V
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise spec
2002 Sep 02
6
Philips Semiconductors
Product specification
Schottky barrier double diode
NOTES
BAT74V
2002 Sep 02
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002
Sep 02
Document order number:
9397 750 10101

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